2023年7月27日发(作者：)

专利内容由知识产权出版社提供专利名称：Solid picture element发明人：Atsushi Kamashita,Satoshi Suzuki申请号：US09177254申请日：19981022公开号：US06281531B1公开日：20010828专利附图：摘要：A solid picture element that transfers charges completely from a photodiodeportion to an amplifying transistor portion to substantially eliminate residual images andmethods of its manufacture are disclosed. The solid picture element includes a buriedphotodiode and a transistor in communication with a transfer gate that is a selectivetransfer path for charges from the photodiode to the transistor. The chargeaccumulation region is located so that it is not in contact with the upper surface of thesemiconductor substrate and so that a margin of the charge accumulation region islocated 0.0 to 0.2 &mgr;m closer to the transistor than any portion of the depletionprevention region. Methods of manufacture of the picture element of the presentinvention include using the transfer gate as a mask and implanting ions into asemiconductor substrate at a first angle to form the charge accumulation region and at asecond, steeper, angle to form the depletion prevention region. Alternative methods ofmanufacture include sifting a portion of a mask to sift end margins of the chargeaccumulation region and the depletion prevention region to achieve the desiredgeometry.申请人：NIKON CORPORATION代理机构：Ipsolon LLP更多信息请下载全文后查看