2023年7月27日发(作者：)

专利内容由知识产权出版社提供专利名称：Battery backed memory with low batteryvoltage trip, disconnect and lockout发明人：William Edward Floro,Ronald Edwin Schultz申请号：US10058959申请日：20020129公开号：US06888267B2公开日：20050503专利附图：摘要：A memory system having power backup having memory circuits that may be setto a low power mode by means of volatile control registers, disconnects the memorycircuits from the battery when low voltage conditions are detected so as to preventreversion of the memory circuits to high current consumption modes such as would drainbatteries after replacement.申请人：William Edward Floro,Ronald Edwin Schultz地址：Willoughby OH US,Solon OH US国籍：US,US代理机构：Quarles & Brady LLP代理人：R. Scott Speroff更多信息请下载全文后查看