2023年6月26日发(作者：)

元器件交易网140/141/142

TIP140/141/142Monolithic Construction With Built In Base-Emitter Shunt Resistors

•High DC Current Gain : hFE

= 1000 @ VCE

= 4V, IC = 5A (Min.)•Industrial Use•Complement to TIP145/146/1471

TO-3PNPN Epitaxial Silicon Darlington TransistorAbsolute Maximum Ratings

TC=25°C unless otherwise notedSymbol VCBOParameter Collector-Base Voltage : TIP140 : TIP141 : TIP142Collector-Emitter Voltage : TIP140 : TIP141 : TIP142 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissipation (TC=25°C) Junction Temperature Storage TemperatureValue 60 80 100 60 80 100 5 10 15 0.5 125 150- 65 ~ 150UnitsVVVVVVVAAAW°C° tor rEquivalent CircuitC VCEOB VEBO IC ICP IB PC TJ TSTGR1R2ER1≅8kΩR2≅0.12kΩElectrical Characteristics

TC=25°C unless otherwise notedSymbol VCEO(sus)Parameter Collector-Emitter Sustaining Voltage

: TIP140: TIP141: TIP142 Collector Cut-off Current

: TIP140: TIP141: TIP142 Collector Cut-off Current

: TIP140: TIP141: TIP142 Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter ON Voltage Delay Time Rise Time Storage Time Fall TimeTest Condition

IC

= 30mA, IB

= 0Min.

60 80 VV 2 2 2 1 1 121000 500

2 33.530.150.55 2.5 2.5VVVVµsµsµsµsRev. A, February 2000

ICEO VCE

= 30V, IB

= 0 VCE

= 40V, IB

= 0 VCE

= 50V, IB

= 0 VCB

= 60V, IE

= 0 VCB

= 80V, IE

= 0 VCB

= 100V, IE

= 0 VBE

= 5V, IC

= 0 VCE

= 4V, IC

= 5A VCE

= 4V, IC

= 10A IC

= 5A, IB

= 10mA IC

= 10A, IB

= 40mA IC

= 10A, IB

= 40mA VCE

= 4V, IC

= 10A VCC

= 30V, IC

= 5A IB1

= 20mA, IB2 = -20mA RL = 6ΩmAmAmAmAmAmAmA ICBO

IEBO

hFE VCE(sat) VBE(sat) VBE(on) tD tR tSTG tF©2000 Fairchild Semiconductor International元器件交易网140/141/142Typical Characteristics

10

100kIB = 2000uA9IC[A],

COLLECTOR

CURRENTIB = 1800uAIB = 1600uAIB = 1400uAIB

=

1A200uIB

=

0u100AIB = 800uAIB = 600uAVCE = 4V10k8765432100IB = 400uAhFE,

DC

CURRENT

GAIN1kIB = 200uA

1.1110100VCE[V], COLLECTOR-EMITTER VOLTAGEIC[A], COLLECTOR CURRENTFigure 1. Static CharacteristicFigure 2. DC current Gain

1000VBE(sat),

VCE(sat)[V],

SATURATION

VOLTAGE10IC=500IBf=0.1MHzVBE(sat)1VCE(sat)Cob[pF],

CAPACITANCE100

0.10.010.1111000IC[A], COLLECTOR CURRENTVCB[V], COLLECTOR-BASE VOLTAGEFigure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturation VoltageFigure 4. Collector Output Capacitance

100

150IC[A],

COLLECTOR

CURRENT125PC[W],

POWER

DISSIPATION1010075

150TIP140TIP141TIP142250.11150o751VCE[V], COLLECTOR-EMITTER VOLTAGETC[C], CASE TEMPERATUREFigure 5. Safe Operating AreaFigure 6. Power Derating©2000 Fairchild Semiconductor InternationalRev. A, February 2000

DC元器件交易网140/141/142Package DemensionsTO-3P15.60

±0.203.80

±0.2013.60

±0.20ø3.20

±0.109.60

±0.204.80

±0.201.50–0.05+0.1512.76

±0.2019.90

±0.2016.50

±0.303.00

±0.201.00

±0.203.50

±0.202.00

±0.2013.90

±0.2023.40

±0.2018.70

±0.201.40

±0.205.45TYP[5.45

±0.30]5.45TYP[5.45

±0.30]0.60–0.05+0.15Dimensions in Millimeters©2000 Fairchild Semiconductor InternationalRev. A, February 2000元器件交易网DEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and isnot intended to be an exhaustive list of all such ™Bottomless™CoolFET™CROSSVOLT™E2CMOS™FACT™FACT Quiet Series™FAST®FASTr™GTO™DISCLAIMERHiSeC™ISOPLANAR™MICROWIRE™POP™PowerTrench®QFET™QS™Quiet Series™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic™UHC™VCX™FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANYPRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANYLIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD used herein:1. Life support devices or systems are devices or systemswhich, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to performwhen properly used in accordance with instructions for useprovided in the labeling, can be reasonably expected toresult in significant injury to the user.2. A critical component is any component of a life supportdevice or system whose failure to perform can bereasonably expected to cause the failure of the life supportdevice or system, or to affect its safety or T STATUS DEFINITIONSDefinition of TermsDatasheet IdentificationAdvance InformationProduct StatusFormative or In

DesignFirst ProductionDefinitionThis datasheet contains the design specifications forproduct development. Specifications may change inany manner without datasheet contains preliminary data, andsupplementary data will be published at a later ild Semiconductor reserves the right to makechanges at any time without notice in order to datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve datasheet contains specifications on a productthat has been discontinued by Fairchild datasheet is printed for reference information inaryNo Identification NeededFull ProductionObsoleteNot In Production©2000 Fairchild Semiconductor InternationalRev. E