2023年6月26日发(作者：)

FJP13007 High Voltage Fast-Switching NPN Power TransistorFJP13007High Voltage Fast-Switching NPN Power Transistor•High Voltage Capability

•High Switching Speed•Suitable for Electronic Ballast and Switching Mode Power tor rAbsolute Maximum Ratings

T = 25°C unless otherwise notedCSymbolVCBOVCEOVEBOICICPIBPCTJTSTGParameterCollector-Base VoltageCollector-Emitter VoltageEmitter-Base VoltageCollector Current (DC)Collector Current (Pulse)Base CurrentCollector Dissipation (TC = 25°C)Junction TemperatureStorage TemperatureValue7150-65 ~ 150UnitsVVVAAAW°C°C©2005 Fairchild Semiconductor 13007 Rev. DFJP13007 High Voltage Fast-Switching NPN Power TransistorElectrical Characteristics

T = 25°C unless otherwise notedCSymbolBVCEOIEBOhFE1hFE2VCE(sat)ParameterCollector-Emitter Breakdown VoltageEmitter Cut-off CurrentDC Current Gain *Collector-Emitter Saturation VoltageConditionsIC = 10mA, IB = 0VEB = 9V, IC = 0VCE = 5V, IC = 2AVCE = 5V, IC = 5AIC = 2A, IB = 0.4AIC = 5A, IB = 1AIC = 8A, IB = 2AIC = 2A, IB = 0.4AIC = 5A, IB = 1AVCE = 10V, IC = 0.5AVCB = 10V, f = 0.1MHzVCC = 125V, IC = 5AIB1 = -IB2

= 1ARL = 25Ω1UnitsVmA8560301.02.03.01.21.6VVVVVMHz1101.63.00.7pFµsµsµsVBE(sat)fTCobtONtSTGtFBase-Emitter Saturation VoltageCurrent Gain Bandwidth ProductOutput CapacitanceTurn On TimeStorge TimeFall Time4* Pulse Test: PW ≤ 300µs, Duty Cycle ≤ 2%hFE ClassificationClassification H1hFE115 ~ 28H226 ~ 39FJP13007 Rev. 13007 High Voltage Fast-Switching NPN Power TransistorTypical Performance CharacteristicsFigure 1. DC Current Gain

100Figure 2. Saturation Voltage

VBE(sat),

VCE(sat)[V],

SATURATION

VOLTAGE10VCE = 5VIC = 3 IBhFE,

DC

CURRENT

GAIN1VBE(sat)10

0.1VCE(sat)10.11100.010.1110100IC[A], COLLECTOR CURRENTIC[A], COLLECTOR CURRENTFigure 3. Collector Output Capacitance

10001000Figure 4. Turn On Time

Cob[pF],

OUTPUT

CAPACITANCEtR,

tD

[ns],

TURN

ON

TIME100tR

10010tD, VBE(off)=5VVCC=125VIC=5IB10.111.1110VCB[V], COLLECTOR-BASE VOLTAGEIC[A], COLLECTOR CURRENTFigure 5. Turn Off Time

10000Figure 6. Forward Biased Safe Operating Area

100tSTG,

tF

[ns],

TURN

OFF

TIMEVCC=125VIC=5IBIC[A],

COLLECTOR

CURRENTtSTG100010µs10DC1ms100µs100tF

10.1100.11100.IC[A], COLLECTOR CURRENTVCE[V], COLLECTOR-EMITTER VOLTAGEFJP13007 Rev.

FJP13007 High Voltage Fast-Switching NPN Power TransistorTypical Performance Characteristics

(Continued)Figure 7. Reverse Biased Safe Operating Area

100Figure 8. Power Derating

10090IC[A],

COLLECTOR

CURRENT10PC[W],

POWER

DISSIPATIONVcc=50V,

IB1=1A, IB2 = -1AL = 1mH801010.1

0.o751VCE[V], COLLECTOR-EMITTER VOLTAGETC[C], CASE TEMPERATUREFJP13007 Rev. FJP13007 High Voltage Fast-Switching NPN Power TransistorMechanical DimensionsTO-2209.90

±0.201.30

±0.102.80

±0.104.50

±0.20(8.70)ø3.60

±0.10(1.70)1.30–0.05+0.109.20

±0.20(1.46)13.08

±0.20(1.00)(3.00)15.90

±0.201.27

±0.101.52

±0.100.80

±0.102.54TYP[2.54

±0.20]2.54TYP[2.54

±0.20]10.08

±0.3018.95MAX.(3.70)(45°)0.50–0.05+0.102.40

±0.2010.00

±0.20Dimensions in MillimetersFJP13007 Rev. 13007 High Voltage Fast-Switching NPN Power TransistorTRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended tobe an exhaustive list of all such ™ActiveArray™Bottomless™CoolFET™CROSSVOLT™DOME™EcoSPARK™E2CMOS™EnSigna™FACT™FACT Quiet Series™FAST®FASTr™FPS™FRFET™GlobalOptoisolator™GTO™HiSeC™I2C™i-Lo™ImpliedDisconnect™Across the board. Around the world.™The Power Franchise®Programmable Active Droop™IntelliMAX™ISOPLANAR™LittleFET™MICROCOUPLER™MicroFET™MicroPak™MICROWIRE™MSX™MSXPro™OCX™OCXPro™OPTOLOGIC®OPTOPLANAR™PACMAN™POP™Power247™PowerEdge™PowerSaver™PowerTrench®QFET®QS™QT Optoelectronics™Quiet Series™RapidConfigure™RapidConnect™µSerDes™SILENT SWITCHER®SMART START™SPM™Stealth™SuperFET™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic®TINYOPTO™TruTranslation™UHC™UltraFET®UniFET™VCX™DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANYPRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITYARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES ITCONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES ORSYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR used herein:1. Life support devices or systems are devices or systems which,(a) are intended for surgical implant into the body, or (b) supportor sustain life, or (c) whose failure to perform when properly usedin accordance with instructions for use provided in the labeling,can be reasonably expected to result in significant injury to theuser.2. A critical component is any component of a life support deviceor system whose failure to perform can be reasonably expectedto cause the failure of the life support device or system, or toaffect its safety or T STATUS DEFINITIONSDefinition of TermsDatasheet IdentificationAdvance InformationProduct StatusFormative or In

DesignFirst ProductionDefinitionThis datasheet contains the design specifications forproduct development. Specifications may change inany manner without datasheet contains preliminary data, andsupplementary data will be published at a later ild Semiconductor reserves the right to makechanges at any time without notice in order to datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve datasheet contains specifications on a productthat has been discontinued by Fairchild datasheet is printed for reference information inaryNo Identification NeededFull ProductionObsoleteNot In ProductionRev. I156FJP13007 Rev.