2023年6月26日发(作者：)

Rev 3: Nov 2004AO4403, AO4403L ( Green Product )P-Channel Enhancement Mode Field Effect TransistorGeneral DescriptionThe AO4403 uses advanced trench technology to provide

excellent RDS(ON), low gate charge and operation with gate

voltages as low as 2.5V. This device is suitable for use as a load

switch or in PWM applications. The source leads are separated to

allow a Kelvin connection to the source, which may be used to

bypass the source inductance. AO4403L (Green Product ) is

offered in a lead-free esVDS (V) = -30VID = -6.1 ARDS(ON)

< 46mΩ (VGS = -10V)RDS(ON) < 61mΩ (VGS = -4.5V)RDS(ON) < 117mΩ (VGS = -2.5V)SOIC-8Top ViewSSSGDDDDD

G

S

Absolute Maximum Ratings TA=25°C unless otherwise notedParameterSymbolVDSDrain-Source VoltageVGSGate-Source VoltageContinuous Drain

Current

APulsed Drain Current

BTA=25°CPower Dissipation

AMaximum-30±12-6.1-5.1-6032.1-55 to 150UnitsVVATA=25°CTA=70°CIDIDMPDTJ, TSTGTA=70°CW°CJunction and Storage Temperature RangeThermal CharacteristicsParameterMaximum Junction-to-Ambient

AMaximum Junction-to-Ambient

AMaximum Junction-to-Lead

CSymbolt ≤ 10sSteady-StateSteady-StateRθJARθJLTyp315916Max407524Units°C/W°C/W°C/WAlpha & Omega Semiconductor, 4403, AO4403LElectrical Characteristics (TJ=25°C unless otherwise noted)SymbolParameterConditionsID=-250µA, VGS=0V

VDS=-24V, VGS=0V

TJ=55°CVDS=0V, VGS=±12VVDS=VGS

ID=-250µAVGS=-4.5V, VDS=-5VVGS=-10V, ID=-6.1A

RDS(ON)Static Drain-Source On-ResistanceTJ=125°CVGS=-4.5V, ID=-5A

VGS=-2.5V, ID=-1A

gFSVSDISForward TransconductanceVDS=-5V, ID=-5A7Diode Forward VoltageIS=-1A,VGS=0VMaximum Body-Diode Continuous Current497611-0.75-1-4.2940VGS=0V, VDS=-15V, f=1MHzVGS=0V, VDS=0V, f=1MHz1047369.4VGS=-4.5V, VDS=-15V, ID=-5A237.6VGS=-10V, VDS=-15V, RL=2.4Ω,

RGEN=6ΩIF=-5A, dI/dt=100A/µsIF=-5A, dI/dt=100A/µs8.644.716.522.715.938467061117-0.7-1Min-30-1-5±100-1.3TypMaxUnitsVµAnAVAmΩmΩmΩSVApFpFpFΩnCnCnCnsnsnsnsnsnCSTATIC PARAMETERSBVDSSDrain-Source Breakdown VoltageIDSSIGSSVGS(th)ID(ON)Zero Gate Voltage Drain CurrentGate-Body leakage currentGate Threshold VoltageOn state drain currentDYNAMIC PARAMETERSCissInput CapacitanceCossOutput CapacitanceCrssRgReverse Transfer CapacitanceGate resistanceSWITCHING PARAMETERSQgTotal Gate ChargeQgsGate Source ChargeQgdtD(on)trtD(off)tftrrQrrGate Drain ChargeTurn-On DelayTimeTurn-On Rise TimeTurn-Off DelayTimeTurn-Off Fall TimeBody Diode Reverse Recovery TimeBody Diode Reverse Recovery Charge 2A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A

=25°C. The

value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.B: Repetitive rating, pulse width limited by junction temperature.C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. 2E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA

curve provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINGOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT & Omega Semiconductor, 4403, AO4403LTYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS25-10V2015-2.5V-4.5V-3V-ID

(A)6-ID(A)125°C10VDS=-5V8105VGS=-2V0012345-VDS (Volts)Fig 1: On-Region Characteristics120100VGS=-2.5V)Ωm80(

)NO(DSR60VGS=-4.5V40VGS=-10V200.002.004.006.008.0010.00-ID (A)Figure 3: On-Resistance vs. Drain Current and

Gate Voltage210)Ω160mID=-2A(

)N110O(SDR60125°C10025°C510-VGS (Volts)Figure 5: On-Resistance vs. Gate-Source VoltageAlpha & Omega Semiconductor, Ltd.4225°C000.511.522.53-VGS(Volts)Figure 2: Transfer Characteristics1.6ID=-5AVGS=-4.5V1.4VGS=-10V1.2VGS=-2.5VID=-2A10.85150175Temperature (°C)Figure 4: On-Resistance vs. Junction

Temperature1.0E+011.0E+00)1.0E-01A(1.0E-02125°

SI-1.0E-031.0E-0425°1.0E-051.0E-060.00.20.40.60.81.01.2-VSD (Volts)Figure 6: Body-Diode

CharacteristicsNormalized

On-ResistanceAO4403, AO4403LTYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS54-VGS

(Volts)3212-Qg (nC)Figure 7: Gate-Charge Characteristics0-VDS (Volts)Figure 8: Capacitance Characteristics1400VDS=-15VID=-5ACapacitance

(pF)12400CossCrssCiss100.0TJ(Max)=150°CTA=25°CRDS(ON)

limited0.1s4010µs100µs1ms10msPower

(W)30TJ(Max)=150°CTA=25°C-ID

(Amps)10.0201.01s10sDC0.10.11-VDS (Volts)Figure 9: Maximum Forward Biased Safe

Operating Area (Note E)101001000.0010.010.Pulse Width (s)Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note E)10ZθJA

Normalized

Transient

Thermal

ResistanceD=Ton/TTJ,PK=TA+PDM.ZθJA.RθJARθJA=40°C/WIn descending orderD=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse10.1PDTonSingle PulseT0.010.000010.00010.0010.010.Pulse Width (s)Figure 11: Normalized Maximum Transient Thermal ImpedanceAlpha & Omega Semiconductor, Ltd.