2023年6月26日发(作者：)

SPTS8R22 s

75V N-Channel MOSFET

General Features









Proprietary New Trench Technology

RDS(ON),typ.=17 m Ω@VGS=10V

Low Gate Charge Minimize Switching Loss

Fast Recovery Body Diode

HF Halogen Free

BVDSS

75V

RDS(ON),typ.

17mΩ

ID[2]

8A

Applications

 High efficiency DC/DC Converters

 Synchronous Rectification

 UPS Inverter

Ordering Information

Part Number

SPTS8R22 s

Package

SOP-8

Brand

SOP-8

TC=25℃ unless otherwise specified

Absolute Maximum Ratings

Symbol

VDSS

VGSS

ID

IDM

PD

TL

TPAK

TJ& TSTG

Parameter

Drain-to-Source Voltage[1]

Gate-to-Source Voltage

Continuous Drain Current[2]

Pulsed Drain Current @VG=10V

Power Dissipation

Derating Factor above 25℃

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10

seconds, Package Body for 10 seconds

Operating and Storage Temperature Range

SPTS8R22 s

75

±20

8

32

3.1

0.4

300

260

-55 to 175

Unit

V

A

W

W/℃

℃

Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device.

Thermal Characteristics

Symbol

RθJC

RθJA

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

SPTS8R22 s

2.5

℃/W

100

Unit

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Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP. Rev. A.2015

SPTS8R22 s

TJ =25℃ unless otherwise specified

Electrical Characteristics

OFF Characteristics

Symbol Parameter

BVDSS Drain-to-Source Breakdown Voltage

IDSS

IGSS

Drain-to-Source Leakage Current

Gate-to-Source Leakage Current

Min.

75

--

--

--

--

Typ. Max.

-- --

-- 5

--

--

--

100

+100

-100

Unit Test Conditions

V VGS=0V, ID=250uA

VDS=75V, VGS=0V

uA

VDS=60V, VGS=0V,

TJ =125℃

VGS=+20V, VDS=0V

nA

VGS=-20V, VDS=0V

ON Characteristics

Symbol

RDS(ON)

VGS(TH)

Min.

--

--

1.3

TJ =25℃ unless otherwise specified

Parameter

Static Drain-to-Source

On-Resistance

Gate Threshold Voltage

Typ. Max.

17 22

19 25

1.8 2.3

Unit

mΩ

V

Test Conditions

VGS=10V, ID=8A

VGS=4.5V, ID=8A

VDS=VGS, ID=250uA

Dynamic Characteristics

Symbol

Parameter

Ciss

Crss

Coss

Qg

Qgs

Qgd

Essentially independent of operating temperature

Min. Typ. Max.

1636

86

201

25

6.8

6.8

Unit

pF

Test Conditions

VGS=0V,

VDS=25V,

f=1.0MHZ

VDD=40V,

ID=8A, VGS=0 to 10V

Input Capacitance

Reverse Transfer Capacitance

Output Capacitance

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain (Miller) Charge

--

--

--

--

--

--

--

--

--

--

--

--

nC

Resistive Switching Characteristics

Symbol

Parameter

td(ON)

trise

td(OFF)

tfall

Turn-on Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Min.

11

50

39

36

Essentially independent of operating temperature

Typ. Max. Unit

Test Conditions

--

--

--

--

--

--

--

--

nS

VDD=40V,

ID=8A,

VGS= 10V

RG=1.0 Ω

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SPTS8R22 s

Parameter

Continuous Source Current[2]

Pulsed Source Current[2]

Diode Forward Voltage

Reverse recovery time

Reverse recovery charge

Min

--

--

--

--

--

Typ.

--

--

0.75

36

49

Max.

8[3]

32[2]

1.2

--

--

Unit

A

V

ns

nC

Test Conditions

Integral PN-diode

in

MOSFET

IS=8A, VGS=0V

VGS=0V ,IF=8A,

diF/dt=100A/μs

Source-Drain Body Diode Characteristics

TJ=25℃ unless otherwise specified

Symbol

ISD

ISM

VSD

trr

Qrr

Note:

[1] TJ=+25℃ to +175℃ .

[2] Silicon limited current only.

[3] Package limited current.

[4] Repetitive rating; pulse width limited by maximum junction temperature.

[5] Pulse width≤380µs; duty cycle≤2%.

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Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP. Rev. A.2015

SPTS8R22 s

Test Circuits and Waveforms

Fig. 1.1 Peak Diode Recovery dv/dt Test Circuit

Fig. 1.2 Peak Diode Recovery dv/dt Waveforms

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Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP. Rev. A.2015

SPTS8R22 s

Test Circuits and Waveforms

(Cont.)

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Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP. Rev. A.2015

SPTS8R22 s

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