2023年6月26日发(作者：)

AO446630V N-Channel MOSFETGeneral DescriptionThe AO4466 uses advanced trench technology to

provide excellent RDS(ON)

and low gate charge. This

device is suitable for use as a load switch or in PWM

applications. The source leads are separated to allow

a Kelvin connection to the source, which may be

used to bypass the source inductance.

Product SummaryVDS(V) = 30VID= 10A (VGS= 10V)RDS(ON)

< 23mΩ (VGS= 10V)RDS(ON)< 35mΩ (VGS= 4.5V)100% UIS Tested

100% Rg TestedSOIC-8Top View Bottom View

DDDDDGSSSG

SAbsolute Maximum Ratings TA=25°C unless otherwise notedParameterSymbolDrain-Source VoltageVDSGate-Source VoltageContinuous DrainCurrent

AFPulsed Drain Current

BTA=25°CPower DissipationAvalanche Current

B, GRepetitive avalanche energy 0.1mH

B, GMaximum30±20107643.12127-55 to 150UnitsVVAVGSTA=25°CTA=70°CIDIDMTA=70°CPDIAREARTJ, TSTGWAmJ°CJunction and Storage Temperature RangeThermal CharacteristicsParameterMaximum Junction-to-Ambient

AMaximum Junction-to-Ambient

AMaximum Junction-to-Lead

CSymbolt ≤ 10sSteady-StateSteady-StateRθJARθJLTyp346218Max407524Units°C/W°C/W°C/WAlpha & Omega Semiconductor, 4466Electrical Characteristics (TJ=25°C unless otherwise noted)SymbolParameterConditionsID=250µA, VGS=0VVDS=30 VGS=0VTJ=55°CVDS=0V, VGS= ±20VVDS=VGS

ID=250µAVGS=4.5V, VDS=5VVGS=10V, ID=10ARDS(ON)gFSVSDISStatic Drain-Source On-ResistanceVGS=4.5V, ID=5AForward TransconductanceDiode Forward VoltageVDS=5V, ID=10AIS=1A,VGS=0VTJ=125°C1.56416.724.323.7170.7512.4298VGS=0V, VDS=15V, f=1MHzVGS=0V, VDS=0V, f=1MHz46240.65.7VGS=10V, VDS=15V, ID=10A2.737367411.87.13.51.21.64.3VGS=10V, VDS=15V, RL=1.5Ω,RGEN=3ΩIF=10A, dI/dt=100A/µs8.43.64.75.32.815.8310.54.56.06.612.65.47.2844888582.88.64.22330352.1Min30151002.6TypMaxUnitsVµAnAVAmΩmΩSVApFpFpFΩnCnCnCnCnsnsnsnsnsnCnsnCSTATIC PARAMETERSDrain-Source Breakdown VoltageBVDSSIDSSIGSSVGS(th)ID(ON)Zero Gate Voltage Drain CurrentGate-Body leakage currentGate Threshold VoltageOn state drain currentMaximum Body-Diode Continuous CurrentDYNAMIC PARAMETERSInput CapacitanceCissCossCrssRgOutput CapacitanceReverse Transfer CapacitanceGate resistanceSWITCHING PARAMETERSQg(10V)Total Gate ChargeQg(4.5V)Total Gate ChargeQgsQgdtD(on)trtD(off)tftrrQrrtrrQrrGate Source ChargeGate Drain ChargeTurn-On DelayTimeTurn-On Rise TimeTurn-Off DelayTimeTurn-Off Fall TimeBody Diode Reverse Recovery TimeBody Diode Reverse Recovery ChargeIF=10A, dI/dt=100A/µsIF=10A, dI/dt=500A/µsBody Diode Reverse Recovery TimeBody Diode Reverse Recovery ChargeIF=10A, dI/dt=500A/µsA: The value of RθJAis measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with

T

A=25°C. The value in any given application depends on the user's specific board design.

B: Repetitive rating, pulse width limited by junction temperature.C. The RθJAis the sum of the thermal impedence from junction to lead RθJLand lead to ambient.D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The SOA

curve provides a single pulse rating.

F. The current rating is based on the t≤10s junction to ambient thermal resistance rating.G: L=100uH, VDD=0V, RG=0Ω, rated VDS=30V and VGS=10VRev 9: May. 2012THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINGOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT & Omega Semiconductor, 4466TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS6010V6V5040)4.5VA(30DI20VGS=3.5V100012345VFig 1: On-Region CharacteristicsDS(Volts)4035VGS=4.5V)30Ωm()N25(OSDR20VGS=10V0ID(A)Figure 3: On-Resistance vs. Drain Current and

Gate Voltage60ID=10A50)Ωm40()N(OS125°CTHIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

D30RCOMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINGOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,20FUNCTIONS AND RELIABILITY WITHOUT NOTICE.25°C10246810VFigure 5: On-Resistance vs. Gate-Source VoltageGS(Volts)Alpha & Omega Semiconductor, Ltd.1512VDS=5V9)A(DI6125°C325°C01.522.533.544.5VFigure 2: Transfer CharacteristicsGS(Volts)1.8eVGS=10Vcna1.6tsiseR-1.4VGS=4.5VnO

dez1.2ilamroN10.85150175Temperature (°C)Figure 4: On-Resistance vs. Junction Temperature1.0E+011.0E+001.0E-01)125°CA(S1.0E-02I1.0E-0325°C1.0E-041.0E-050.00.20.40.60.81.0VSD(Volts)Figure 6: Body-Diode CharacteristicsAO4466TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS108VGS(Volts)6420046Qg(nC)Figure 7: Gate-Charge Characteristics28VDS=15VID=10ACapacitance

(pF)600500Ciss400300200Coss10000Crss10152025VDS(Volts)Figure 8: Capacitance Characteristics530100.0IA,

Peak

Avalanche

Current

(A)In descending orderTA=25°C, 100°C, 125°C,

100.010µs10.010.0ID(Amps)100µsRDS(ON)

limited1.01.Time in Avalache, tA(ms)Figure 9: Single Pulse Avalanche Capability0.10.1TJ(Max)=150°CTA=25°C1DC10VDS(Volts)1ms10ms100ms1s10s100Figure 10: Maximum Forward Biased Safe

Operating Area (Note E)50TJ(Max)=150°CTA=25°C40Power

(W)30201000.00010.011100Pulse Width (s)Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note E)Alpha & Omega Semiconductor, 4466TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS10ZθJANormalized

Transient

Thermal

ResistanceD=Ton/TTJ,PK=TA+PDM.ZθJA.RθJARθJA=75°C/WIn descending orderD=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse10.1PDSingle PulseTonT0.010.000010.00010.0010.010.Pulse Width (s)Figure 12: Normalized Maximum Transient Thermal ImpedanceAlpha & Omega Semiconductor, 4466Gate Charge Test Circuit & WaveformVgsQg+VDC10V-DUTVgsIg+VDCVdsQgsQgd-ChargeResistive Switching Test Circuit & WaveformsRLVdsVdsVgsRgVgsDUT+VDC90%Vdd10%Vgstd(on)trton-td(off)tofftfUnclamped Inductive Switching (UIS) Test Circuit & WaveformsLVdsIdVgsRgDUTVgsVgsVgsVdsE = 1/2 LIAR2ARBVDSS+VDCVddIdIAR-Diode Recovery Test Circuit & WaveformsVds +DUTVgsQ = - IdtrrVds -VgsIgIsdLIsdIFdI/dtIRMtrr+VDCVddVds-VddAlpha & Omega Semiconductor, Ltd.