2024年4月11日发(作者：)

sic功率器件工艺流程

英文回答：

The process flow for SiC power device fabrication

involves several key steps. Let me walk you through the

process.

1. Substrate Preparation: The first step is to prepare

the SiC substrate. This involves cleaning the substrate to

remove any impurities and defects. The substrate is then

polished to achieve a smooth surface.

2. Epitaxial Growth: The next step is to grow a thin

layer of SiC on top of the substrate. This is done using a

technique called epitaxial growth. In this process, a

precursor gas containing silicon and carbon is introduced

into a high-temperature reactor. The gas decomposes and

deposits SiC on the substrate, forming a thin layer with

controlled thickness and doping.

3. Device Fabrication: Once the epitaxial layer is

grown, the next step is to fabricate the actual power

device on top of it. This involves several processes such

as lithography, etching, and deposition. Lithography is

used to define the device structures by selectively

exposing the photoresist and then etching away the unwanted

material. Deposition techniques like physical vapor

deposition or chemical vapor deposition are used to deposit

metal contacts and dielectric layers.

4. Doping and Annealing: After the device structures

are defined, doping is performed to introduce impurities

into specific regions of the device. This is done to create

the desired electrical characteristics. The doped regions

are then annealed at high temperatures to activate the

dopants and repair any damage caused during the doping

process.

5. Contact Formation: The next step is to form the

metal contacts on the device. This involves depositing

metal layers on top of the device and then patterning them

using lithography and etching. The metal contacts provide

electrical connections to the device and allow for the flow

of current.

6. Packaging: Once the device fabrication is complete,

the final step is to package the device. This involves

encapsulating the device in a protective package that

provides electrical connections and thermal management. The

package also protects the device from external

environmental factors.

中文回答：

SiC功率器件的制造过程涉及几个关键步骤。让我为您介绍一

下这个过程。

1. 衬底制备，第一步是准备SiC衬底。这包括清洁衬底以去除

任何杂质和缺陷。然后，将衬底抛光，以获得光滑的表面。

2. 外延生长，下一步是在衬底上生长一层薄的SiC。这是通过

一种称为外延生长的技术实现的。在这个过程中，将含有硅和碳的

前体气体引入高温反应器中。气体分解并在衬底上沉积SiC，形成

具有控制厚度和掺杂的薄层。

3. 器件制造，一旦外延层生长完毕，下一步是在其上制造实际

的功率器件。这涉及到几个工艺，如光刻、刻蚀和沉积。光刻用于

通过选择性曝光光刻胶并刻蚀掉不需要的材料来定义器件结构。物

理气相沉积或化学气相沉积等沉积技术用于在器件上沉积金属接触

和介电层。

4. 掺杂和退火，在定义器件结构之后，进行掺杂以在器件的特

定区域引入杂质。这是为了创建所需的电学特性。掺杂区域然后在

高温下退火，以激活掺杂剂并修复掺杂过程中造成的任何损伤。

5. 接触形成，下一步是在器件上形成金属接触。这涉及在器件

上沉积金属层，然后使用光刻和刻蚀对其进行图案化。金属接触提

供器件的电连接，并允许电流的流动。

6. 封装，一旦器件制造完成，最后一步是封装器件。这涉及将

器件封装在一个提供电连接和热管理的保护封装中。封装还保护器

件免受外部环境因素的影响。