2023年11月29日发(作者：麦博m100和m200的区别)
Samsung Semiconductor, Inc.
Product Selection Guide
MEMORY AND STORAGESYSTEM LSI
SECTION APAGE
DRAM
DDR3 SDRAM
3a
DDR2 SDRAM
3a-4a
DDR SDRAM
4a-5a
SDRAM
6a-7a
RDRAM
7a
MOBILE SDRAM
8a
GRAPHICS DDR SDRAM
8a
DRAM ORDERING INFORMATION
9a-11a
FLASH
NAND,OneNAND,NOR FLASH
12a
NAND FLASH ORDERING INFORMATION
13a
ASYNCHRONOUS SRAM
LOW-POWER SRAM
14a
LOW-VOLTAGE AND LOW-POWER SRAM
14a
MICRO-POWER AND LOW-VOLTAGE SRAM
14a
HIGH DENSITY,LOW POWER (UtRAM)
15a
HIGH-SPEED ASYNCHRONOUS FAST SRAM
15a
ASYNCHRONOUS SRAM ORDERING INFORMATION
16a
SYNCHRONOUS SRAM
SPB & FT SRAM
17a-18a
NtRAM
18a-19a
LATE-WRITE R-R SRAM
19a-20a
DDR / II/ II+ SRAM
20a-22a
QDR / II/ II+ SRAM
22a-23a
SYNCHRONOUS SRAM ORDERING INFORMATION
24a
MULTI-CHIP PACKAGE
NAND/DRAM
25a
NOR/SRAM and NOR/UtRAM
DDR3 SDRAM UNBUFFERED MODULES
DensityOrgSpeed (Mbps)Part NumberRankCompositionPackage
256MB32Mx64800/1066/1333M378B3374EZ0-C(E7/F8/G9)1512Mb(32M x16) * 4RoHS
512MB64Mx64800/1066/1333M378B6573EZ0-C(E7/F8/G9)1512Mb(64M x8) * 8RoHS
512MB64Mx64800/1066/1333M378B6474CZ0-C(E7/F8/G9)11Gb(64M x16) * 4RoHS
1GB128Mx64800/1066/1333M378B2973EZ0-C(E7/F8/G9)2512Mb(64M x8) * 16RoHS
1GB128Mx64800/1066/1333M378B2873CZ0-C(E7/F8/G9)11Gb(128M x8) * 8RoHS
2GB256Mx64800/1066/1333M378B5673CZ0-C(E7/F8/G9)21Gb(128M x8) * 16RoHS
NOTES:E7=DDR3-800 (5-5-5)F8 = DDR3-1066 (7-7-7)G9=DDR3-1333 (8-8-8)Voltage:1.5V
DDR3 SDRAM COMPONENTS
DensityOrgSpeed (Mbps)Part NumberPackageDimension
512Mb128M x4800/1066/1333K4B510446E-ZC(E7/F8/G9)82ball FBGA10x11.5mm
512Mb64M x8800/1066/1333K4B510846E-ZC(E7/F8/G9)82ball FBGA10x11.5mm
512Mb32M x16800/1066/1333K4B511646E-ZC(E7/F8/G9)100ball FBGA10x11.5mm
1Gb256M x4800/1066/1333K4B1G0446C-ZC(E7/F8/G9)94ball FBGA11x18mm
1Gb128M x8800/1066/1333K4B1G0846C-ZC(E7/F8/G9)94ball FBGA11x18mm
1Gb64M x16800/1066/1333K4B1G1646C-ZC(E7/F8/G9)112ball FBGA11x18mm
NOTES:E7=DDR3-800 (5-5-5)F8 = DDR3-1066 (7-7-7)G9=DDR3-1333 (8-8-8)Voltage:1.5V
Package
DDR2 SDRAM REGISTERED MODULES
DensityOrgSpeed (Mbps)Part NumberRegisterRankComposition Package
512MB64Mx72400/533M393T6553CZ3-C(CC/D5)N1(64M x8)*9Lead-free
512MB64Mx72400/533/667M393T6553CZA-C(CC/D5/E6)Y1(64M x8)*9Lead-free
1GB128Mx72400/533M393T2950CZ3-C(CC/D5)N1(128M x4)*18Lead-free
1GB128Mx72400/533M393T2953CZ3-C(CC/D5)N2(64M x8)*18Lead-free
1GB128Mx72400/533/667M393T2950CZA-C(CC/D5/E6)Y1(128M x4)*18Lead-free
1GB128Mx72400/533/667M393T2953CZA-C(CC/D5/E6)Y2(64M x8)*18Lead-free
2GB256Mx72400/533M393T5750CZ3-C(CC/D5)N2(128M x4)*36Lead-free
2GB256Mx72400/533M393T5660AZ3-C(CC/D5)N1(256M x4)*18Lead-free
2GB256Mx72400/533M393T5663AZ3-C(CC/D5)N2(128M x8)*18Lead-free
2GB256Mx72400/533/667M393T5750CZA-C(CC/D5/E6)Y2(128M x4)*36Lead-free
2GB256Mx72400/533/667M393T5660AZA-C(CC/D5/E6)Y1(256M x4)*18Lead-free
2GB256Mx72400/533/667M393T5663AZA-C(CC/D5/E6)Y2(128M x8)*18Lead-free
4GB512Mx72400/533M393T5168AZ0-C(CC/D5)N2st.(512M x4)*18Lead-free
4GB512Mx72400/533/667M393T5166AZA-C(CC/D5/E6)Y2st.(512M x4)*18Lead-free
NOTES:00=Intel AMB01=IDT AMBVoltage for AMB:1.5VVoltage for DRAM:1.8VModule Height=1.2"
Parity
DDR2 SDRAM FULLY BUFFERED MODULES
DensityOrgSpeed (Mbps)Part NumberRankCompositionPackage
512MB64Mx72533M395T6553CZ4-CD5(00/10)1(64M x8)*9Lead-free
512MB64Mx72667M395T6553CZ4-CE6(00/10)1(64M x8)*9Lead-free
1GB128Mx72533M395T2953CZ4-CD5(00/10)2(64M x8)*18Lead-free
1GB128Mx72667M395T2953CZ4-CE6(00/10)2(64M x8)*18Lead-free
2GB256Mx72533M395T5750CZ4-CD5(00/10)2(128M x4)*36Lead-free
2GB256Mx72667M395T5750CZ4-CE6(00/10)2(128M x4)*36Lead-free
4GB512Mx72533M395T5166AZ4-CD5(00/10)2st.(512M x4)*18Lead-free
4GB512Mx72533M395T5166AZ4-CE6(00/10)2st.(512M x4)*18Lead-free
NOTES:00=Intel AMB01=IDT AMBVoltage for AMB:1.5VVoltage for DRAM:1.8VModule Height=1.2"
SEPTEMBER 2006
BR-06-ALL-001SAMSUNG SEMICONDUCTOR,INC.
3a
DDR2 DRAM SODIMM MODULES
DensityOrgSpeed (Mbps)Part NumberRankCompositionPackage
256MB32Mx64400/533/667M470T3354CZ3-C(CC/D5/E6)1(32M x16)*4Lead-free
512MB64Mx64400/533/667M470T6554CZ3-C(CC/D5/E6)2(32M x16)*8Lead-free
1GB128Mx64400/533/667M470T2953CZ3-C(CC/D5/E6)2(64M x8)*16Lead-free
1GB128Mx64400/533/667M470T2864AZ3-C(CC/D5/E6)2(64M x16)*8Lead-free
2GB256Mx64400/533/667M470T5669AZ0-C(CC/D5/E6)2st.(256M x8)*8Lead-free
NOTES:CC=PC2-3200 (DDR2-400 @ CL=3)D5 =PC2-4200 (DDR2-533 @ CL=4)E6=PC2-5300 (DDR2-667 @ CL=5)Voltage:1.8VModule Height=1.2"
DDR2 SDRAM UNBUFFERED MODULES
DensityOrgSpeed (Mbps)Part NumberRankCompositionPackage
256MB32Mx64400/533/667/800M378T3354CZ3-C(CC/D5/E6E7)1(32M x16)*4Lead-free
512MB64Mx64400/533/667/800M378T6553CZ3-C(CC/D5/E6/E7)1(64M x8)*8Lead-free
1GB128Mx64400/533/667/800M378T2953CZ3-C(CC/D5/E6E7)2(64M x8)*16Lead-free
2GB256Mx64400/533/667M378T5663AZ3-C(CC/D5/E6)2(128M x8)*16Lead-free
NOTES:CC=PC2-3200 (DDR2-400 @ CL=3)D5 = PC2-4200 (DDR2-533 @ CL=4)E6=PC2-5300 (DDR2-667 @ CL=5)Voltage:1.8VE7=PC2-6400 (DDR2-800 @ CL=5)
Module Height =1.2"
DDR2 SDRAM COMPONENTS
DensityOrgSpeed (Mbps)Part NumberPackageDimension
512Mb128M x4400/533/667K4T51043QC-ZC(CC/D5/E6)60ball FBGA10x11mm
512Mb64M x8400/533/667/800K4T51083QC-ZC(CC/D5/E6/E7)60ball FBGA10x11mm
512Mb32M x16400/533/667K4T51163QC-ZC(CC/D5/E6)84ball FBGA11x13mm
1Gb256M x4400/533/667K4T1G044QA-ZC(CC/D5/E6)68ball FBGA11x18mm
1Gb128M x8400/533/667K4T1G084QA-ZC(CC/D5/E6)68ball FBGA11x18mm
1Gb64M x16400/533/667K4T1G164QA-ZC(CC/D5/E6)84ball FBGA11x18mm
NOTES:CC=DDR2-400 (3-3-3)D5 = DDR2-533 (4-4-4)E6=DDR2-667 (5-5-5)E7=DDR2-800 (5-5-5)Voltage:1.8V
Package
DDR SDRAM 1U DIMM MODULES:REGISTERED
DensityOrgSpeed (Mbps)CompositionPart NumberPackageModuleNotes
512MB64Mx72333/400(64Mx8)*9M312L6523DZ3 - CB3/CCCFBGA1Pb-free
512MB64Mx72333/400(64Mx8)*9M312L6523CZ3 - CB3/CCCFBGA1Pb-free
1GB128Mx72333/400(128Mx4)*18M312L2920CZ3 -CB3/CCCFBGA1Pb-free
2GB256Mx72266(St.256Mx4)*18M312L5628CU0 - CB0TSOP2Pb-free
2GB256Mx72333/400(128Mx4)*36M312L5720CZ3-CB3/CCCFBGA2Pb-free
4GB512Mx72266/333(St.512Mx4)*18M312L5128AU0-CB0/CB3TSOP2Pb-free
4GB512Mx72400(St.512Mx4)*18M312L5128AU1-CCCTSOP2Pb-free
NOTES:B0 = DDR266 (133MHz @ CL=2.5) A2 = DDR266 (133MHz @ Cl=2) B3 = DDR333 (166MHz @ CL=2.5) CC = DDR400 (200MHz @ CL=3)
Component# Banks
Type:184-pin
4a
SAMSUNG SEMICONDUCTOR,INC.
BR-06-ALL-001
SEPTEMBER 2006
DDR DRAM SODIMM MODULES
DensityOrgSpeed (Mbps)CompositionPart NumberNotes
512MB 64Mx64333(32M x 16)*4M470L3224CU0 -C(L)B3Pb-free
512MB 64Mx64333(32M x 16)*4M470L6524DU0-CB300Pb-free
1GB 128MX64333(64M x 8)*16 M470L2923BN0 - C(L)B3
1GB 128MX64333(64M x 8)*16 M470L2923DV0-CB300Pb-free
NOTES:B0 = DDR266 (133MHz @ CL=2.5) B3 = DDR333 (166MHz @ CL=2.5)CC = DDR400 (200MHz @ CL=3)A2 = DDR266 (133MHz @ Cl=2)
Type:200-pin,Double SidedHeight(in):1.25
DDR SDRAM DIMM MODULES:UNBUFFERED
DensityOrgSpeed (Mbps)CompositionPart NumberNotes
512MB64MX64333/400(64M x8) *8M368L6523CUS-CB3/CCCPb-free
512MB64MX64333/400(64M x8) *8M368L6523DUS-CB3/CCCPb-free
512MB64Mx72333/400(64M x 8)*9 M381L6523CUM-CB3/CCCPb-free
512MB64Mx72333/400(64M x 8)*9 M381L6523DUM-CB3/CCCPb-free
1GB128Mx64333/400(64M x 8)*16M368L2923CUN-B3/CCCPb-free
1GB128Mx64333/400(64M x 8)*16M368L2923DUN-CB3/CCCPb-free
1GB128Mx72333/400(64M x 8)*18M381L2923CUM-CB3/CCCPb-free
1GB128Mx72333/400(64M x 8)*18M381L2923DUM-CB3/CCCPb-free
NOTES:B0 = DDR266 (133MHz @ CL=2.5) A2 = DDR266 (133MHz @ Cl=2) B3 = DDR333 (166MHz @ CL=2.5) CC = DDR400 (200MHz @ CL=3)
Type:184-pinPackage:TSOP components Voltage:2.5V
DDR SDRAM COMPONENTS
DensityOrgSpeed (Mbps)Part NumberPackageNotes
256M64Mx4266K4H560438H-UC(L)B066 pin TSOPPb-free
256M64Mx4333/400K4H560438H-ZC(L)CC/B360 ball FBGAPb-free
256M32Mx8333/400K4H560838H-UC(L)B3/CCC66 pin TSOPPb-free
256M32Mx8333/400K4H560838H-ZC(L)B3/CCC60 ball FBGAPb-free
256M16Mx16333/400K4H561638H-UC(L)/B3/CCC66 pin TSOPPb-free
256M16Mx16333/400K4H561638H-ZC(L)B3/CCC60 ball FBGAPb-free
512M128Mx4266K4H510438C-UC(L)B066 pin TSOPPb-free
512M128Mx4266K4H510438D-UC(L)B066 pin TSOPPb-free
512M128Mx4333/400K4H510438C-ZC(L)B3/CCC60 ball FBGAPb-free
512M128Mx4333/400K4H510438D-ZC(L)B3/CCC60 ball FBGAPb-free
512M64Mx8266/333/400K4H510838C-UC(L)B0/B3/CCC66 pin TSOPPb-free
512M64Mx8333/400K4H510838C-ZC(L)B3/CCC60 ball FBGAPb-free
512M64Mx8333/400K4H510838D-UC(L)B3/CCC66 pin TSOPPb-free
512M32Mx16333/400K4H511638C-UC(L)B3/CCC66 pin TSOPPb-free
512M32Mx16333/400K4H511638C-ZC(L)B3/CCC60 ball FBGAPb-free
512M32Mx16333/400K4H511638D-UC(L)B3/CCC66 pin TSOPPb-free
1Gb 256Mx4266/333/400K4H1G0438A-UCB0/B3/CCC66 pin TSOPPb-free
1Gb128Mx8266/333/400K4H1G0838A-UCB0/B3/CCC66 pin TSOPPb-free
2Gb25MX4 *2333K4H2G0638A-UCB300066 pin TSOPPb-free
NOTES:B0 = DDR266 (133MHz @ CL=2.5) A2 = DDR266 (133MHz @ Cl=2) B3 = DDR333 (166MHz @ CL=2.5) CC = DDR400 (200MHz @ CL=3)
SEPTEMBER 2006
BR-06-ALL-001SAMSUNG SEMICONDUCTOR,INC.
5a
1U SDRAM DIMM MODULES,PC133 / PC100 COMPLIANT:REGISTERED
LOW-PROFILE DIMMs(1.2-INCH HEIGHT)
DensityOrgSpeedCompositionPart NumberModuleRefreshComments
128MB**16Mx72PC133(16x8)*9M390S1723ITU - C7A0018K
256MB32Mx72PC133(32Mx8)*9M390S3253HUU - C7A0018K
512MB64Mx72PC133(64Mx4)*18M390S6450HUU - C7A0028Kstacked
1GB128Mx72PC133(St.128Mx4)*18M390S2858ETU - C7A0028K
1GB128Mx72PC133(128Mx4)*18M390S2950DUU - C7A0028K
2GB256Mx72PC133(St.128Mx4)*18M390S5658DUU - C7A002
# Banks
NOTES:St.= Stacked components Type:168 pin,Double sided Package:TSOP Components Voltage:3.3V
**Die rev.change - 128Mb component F-die to I-diestacked,avail Q204
SDRAM SODIMM MODULES
DensityOrgSpeedCompositionPart Number(in)Module
128MB**16Mx64PC133(8Mx16)*8M464S1724ITS-L7A001.151
256MB32Mx64PC133(16Mx16)*8M464S3254HUS-L7A001.251
256MB32Mx64PC133(32Mx16)*4M464S3354DUS-C(L)7A1.251
512MB64Mx64PC133(32Mx16)*8M464S6554DUS-C(L)7A1.181
512MB64Mx64PC133(64Mx8)*16M464S6453HV0-C75/L75001.252
Height# Banks
NOTES:DS = Double-Sided L = Commercial Temp.,Low Power Interface:SSTL-2 # Banks:4 Latency:CL6 Refresh:8K/32ms
**Die rev.change - 128Mb component F-die to I-die
SDRAM DIMM MODULES,PC133 COMPLIANT:UNBUFFERED
DensityOrgSpeed (Mbps)CompositionPart NumberModule
128MB**16Mx64PC133128M:(16Mx8)*8M366S1723ITS-C7A001
128MB16Mx64PC133256M:(16Mx16)*4M366S1654HUS-C7A001
128MB**16Mx72PC133128M:(16Mx8)*9M374S1723ITS-C7A001
128MB16Mx72PC133256M:(16Mx16)*5M374S1654ETS- C7A001
128MB**32Mx64PC133128M:(16Mx8)*16M366S3323ITS- C7A002
128MB**32Mx72PC133128M:(16Mx8)*18M374S3323ITS-C7A002
256MB32Mx64PC133256M:(32Mx8)*8M366S3253HUS-C7A001
256MB32Mx64PC133256M:(16Mx16)*8M366S3254HUS-C7A001
256MB32Mx64PC133256M:(32Mx8)*8M366S3253US-C7A001
512MB64Mx64PC133256M:(32Mx8)*16M366S6453HUS-C7A002
1GB128Mx64PC133512M:(64Mx8)*16M366S2953DUS-C7A002
NOTES:Type:168 pin Package:TSOP components Voltage:3.3V
# Banks
**Die rev.change - 128Mb component F-die to I-die
6a
SAMSUNG SEMICONDUCTOR,INC.
BR-06-ALL-001
SEPTEMBER 2006
SDRAM COMPONENTS
DensityOrgSpeed (Mbps)Part NumberRefreshPkg TSOPComments
64Mb**8Mx8133K4S640832K-UC(75)0004K54
64Mb**4Mx16133/143/166K4S641632K-UC(L)(75/70/60)0004K54
64Mb**2Mx32143/166/200K4S643232H-UC(70/60/50)0004K86
128Mb**16Mx8133K4S280832I-UC(L)(75)0004K54
128Mb**8Mx16133/166K4S281632I-UC(L)(75/60)0004K54
256Mb64Mx4133K4S560432H-UC(L)(75)0008K54
256Mb32Mx8133K4S560832H-UC(L)(75)0008K54
256Mb16Mx16133/166K4S561632H-UC(L)(75/60)0008K54
512Mb128Mx4133K4S510632D-UC(L)(75)0008K54stacked
512Mb64Mx8133K4S510732D-UC(L)(75)0008K54stacked
512Mb128Mx4133K4S510432D-UC(L)(75)0008K54
512Mb64Mx8133K4S510832D-UC(L)(75)0008K54
512Mb32Mx16133K4S511632D-UC(L)(75)0008K54
1Gb256Mx4133K4S1G0632D-UC(L)(75)0008K54stacked
NOTES:
1L = Commercial Temp.,Low Power
2# Banks:4
3Package:TC = TSOP;UC = Lead Free
4Voltage:3.3V*In EOL process
5Speed:PC133 (133MHz CL=3/PC100 CL2)**Die rev.change - 64Mb H-die to K-die,128Mb F-die to I-die
6For Ind.Temp.,check with SSI Marketing
RDRAM COMPONENTS
DensityOrgSpeed (Mbps)Part NumberRefreshPackageNotes
128Mx16800/1066K4R271669F-SCK8/S816K/32ms54ball FBGA
288Mx18800/1066K4R881869E-GCM8/T916K/32ms92ball FBGAlead-free only
576M* x181066K4R761869A-GCT932K/32ms92ball FBGAlead-free only
NOTES:Voltage:2.5 v
* In EOL Process
RIMMMODULES
™
DensityOrgSpeed (Mbps)# of DevicesPart NumberComponentComments
128MB ECCx18800/1066Mbps4MR18R1624EG0-CM8/T9288Mblead-free only
256MB ECCx18800/1066Mbps 8MR18R1628EG0-CM8/T9288Mblead-free only
512MB ECCx18800/1066Mbps16MR18R162GEG0-CM8/T9288Mblead-free only
128MB NON-ECCx16800/1066Mbps4MR16R1624EG0-CM8/T9256Mblead-free only
256MB NON-ECCx16800/1066Mbps8MR16R1628EG0-CM8/T9256Mblead-free only
512MB NON-ECCx16800/1066Mbps16MR16R162GEG0-CM8/T9512Mblead-free only
144MB NexModx18800/1066Mbps4MN18R1624EF0-CT9288Mblead-free only
288MB NexModx18800/1066Mbps8MN18R1628EF0-CT9288Mblead-free only
576MB NexMod *x18800/1066Mbps8MN18R3268AEF0-CT9576Mblead-free only
NOTES:* In EOL Process
SEPTEMBER 2006
BR-06-ALL-001SAMSUNG SEMICONDUCTOR,INC.
7a
MOBILE SDRAM COMPONENTS
DensityOrgPart NumberRefreshPower TSOP/BGA
64Mb4Mx16K4M641633K-(1)(2)(3)(4)4K3.0V FBGA-54balls
64Mb4Mx16K4M64163LK-(1)(2)(3)(4)4K2.5V FBGA-54balls
64Mb4Mx16K4M64163PK-(1)(2)(3)(4)4K1.8V FBGA-54balls
64Mb2MX32K4S643233H-(1)(2)(3)(4)4K3.0VFBGA-90balls
64Mb2MX32K4S64323LH-(1)(2)(3)(4)4K2.5V FBGA-90balls
128Mb8MX16K4M281633H-(1)(2)(3)(4)4K3.0VFBGA-54balls
128Mb8MX16K4M28163LH-(1)(2)(3)(4)4K2.5V FBGA-54balls
128Mb8MX16K4M28163PH-(1)(2)(3)(4)4K1.8V FBGA-54balls
128Mb4MX32K4M283233H-(1)(2)(3)(4)4K3.0V FBGA-90balls
128Mb4MX32K4M28323LH-(1)(2)(3)(4)4K2.5V FBGA-90balls
128Mb4MX32K4M28323PH-(1)(2)(3)(4)4K1.8VFBGA-90balls
256Mb16Mx16K4M561633G-(1)(2)(3)(4)8K3.0VFBGA-54balls
256Mb16Mx16K4M56163LG-(1)(2)(3)(4)8K2.5V FBGA-54balls
256Mb16Mx16K4M56163PG-(1)(2)(3)(4)8K1.8V FBGA-54balls
256Mb16Mx16K4X56163PG-(1)(2)(3)(4)8K1.8VFBGA-60balls
256Mb8Mx32K4M563233G-(1)(2)(3)(4)8K3.0VFBGA-90balls
256Mb8Mx32K4M56323LG-(1)(2)(3)(4)8K2.5V FBGA-90balls
256Mb8Mx32K4M56323PG-(1)(2)(3)(4)8K1.8V FBGA-90balls
256Mb8Mx32K4X56323PG-(1)(2)(3)(4)8K1.8V FBGA-90balls
512Mb32Mx16K4M511633C-(1)(2)(3)(4)8K3.0VFBGA-54balls
512Mb32Mx16K4M51163LC-(1)(2)(3)(4)8K2.5VFBGA-54balls
512Mb32Mx16K4M51163PC-(1)(2)(3)(4)8K1.8VFBGA-54balls
512Mb32Mx16K4X51163PC-(1)(2)(3)(4)8K1.8VFBGA-60balls
512Mb16Mx32K4M513233C-(1)(2)(3)(4)8K3.0VFBGA-90balls
512Mb16Mx32K4M51323LC-(1)(2)(3)(4)8K2.5VFBGA-90balls
512Mb16Mx32K4M51323PC-(1)(2)(3)(4)8K1.8VFBGA-54balls
512Mb16Mx32K4X51323PC-(1)(2)(3)(4)8K1.8VFBGA-54balls
F/H:Smaller 90balls FBGA Mono
Y/P:54balls CSP DDP
M/E:90balls FBGA DDP
(2) Temp & Power:
C :Commercial(-25 ~ 70’C),Normal
L :Commercial,Low,i-TCSR
F :Commercial,Low,i-TCSR
& PASR & DS
# Pins
Mobile-DDR
C3:133MHz,CL 3
C2:100MHz,CL 3
C0:66MHz,CL 3
NOTES:
(1) Package:Leaded / Lead Free
G/A:52balls FBGA Mono
R/B:54balls FBGA Mono
X /Z:54balls BOC Mono
J /V:60(72)balls FBGA Mono 0.5pitch
L /F:60balls FBGA Mono 0.8pitch S /
D:90balls FBGA
Monolithic (11mm x 13mm)
E :Extended(-25~85’C),Normal
(3)~(4) Speed:
N :Extended,Low,i-TCSR
Mobile-SDRAM
G :Extended,Low,i-TCSR & PASR & DS
60:166MHz,CL 3
I :Industrial(-40~85’C),Normal
75:133MHz,CL 3
P :Industrial,Low
80:125MHz,CL 3
H :Industrial,Low,i-TCSR & PASR & DS
1H:105MHz,CL 2
1L:105MHz,CL 3
15:66MHz,CL 2 & 3
GRAPHICS DDR SDRAM COMPONENTS
TypeDensityOrgDiePart NumberPackageVDD/VDDQSpeed Bin (MHz)Remarks
GDDR4512Mb16Mx32EK4U52324Q136 FBGA1.8/1.8V1100/1200/1400CS now
GDDR3512Mb16Mx32CK4J52324Q136 FBGA1.8/1.8V500/600/700EOL'd
512Mb16Mx32EK4J52324Q136 FBGA1.8/1.8V700/800CS now
256Mb8Mx32 GK4J55323Q 136 FBGA1.8/1.8V700/800
GDDR2512Mb32Mx16CK4N51163Q84 FBGA 1.8/1.8V300/350/400
256Mb16Mx16 GK4N56163Q 84 FBGA 1.8/1.8V350/400
256Mb16Mx16 HGDDR1K4D55163866 TSOPII 2.35~2.7V200/250
128Mb4Mx32GK4D26323Q 144 FBGA 1.8/1.8V300/350EOL'd
IK4D263238 144 FBGA 2.5/2.5V200/250
8Mx16IK4D26163866 TSOPII 2.5/2.5V200/250CL-tRCD-tRP 3-3-3 for 200Mhz
NOTES:* clock cycle time** all products are 4 banks
0708091A111214162022252A334050
0.71ns0.83ns0.90ns1ns1.11ns1.25ns 1.429ns1.667ns 2.0 ns2.2 ns2.5 ns2.86 NS3.3 ns 4.0 ns5.0 ns
(1000MHz)(900MHz)(800MHz)(700MHz)(600MHz)(500MHz)(450MHz)(400MHz)(350MHz)(200MHz)(1400MHz)(1200MHz)(1100MHz)(300MHZ)(250MHz)
136 FBGA2.0/2.0V800/900/1000EOL'd
136 FBGA1.9/1.9V900/1000CS now
136 FBGA2.0/2.0V900/1000
84 FBGA 2.0/2.0V450/500
K4D263238 144 FBGA 2.5/2.5V300/350EOL'd
K4D263238 100 TQFP2.5/2.5V200/250
Part No.Suffix
Description
8a
SAMSUNG SEMICONDUCTOR,INC.
BR-06-ALL-001SEPTEMBER 2006
DRAM ORDERING INFORMATION
K 4 X X X X X X X X - X X X X X X X
1 2 3 4 5 6 7 8 910 1112 131415161718
1.Memory (K)66:64M,8K/64msS:SSTL-2,2.2V,1.8V
2.DRAM:4
3.Small Classification
A:Advanced Dram Technology
B:DDR3 SDRAM
D:DDR SGRAM
E:EDO
F:FP
H:DDR SDRAM
J:GDDR3 SDRAM
K:Mobile SDRAM PEA
L:Mobile L2RAM
M:Mobile SDRAM
N:DDR SGRAM II
R:Direct RDRAM
S:SDRAM
T:DDR SDRAM II∫
U:GDDR4 SDRAM
V:Mobile DDR SDRAM PEA
X:Mobile DDR SDRAM
Y:XDR DRAM
Z:Value Added DRAM
°∞PEA:Power Efficient Address
4~5.Density,Refresh- DDR SDRAM
111:1G,64K/16ms
15:16M,1K/16ms
16:16M,2K/32ms
17:16M,4K/64ms
26:128M,4K/32ms
27:128M,16K/32ms
28:128M,4K/64ms
32:32M,2K/32ms
40:4M,512/8ms
41:4M,1K/16ms
44:144M,16K/32ms
50:512M,32K/16ms
51:512M,8K/64ms
52:512M,8K/32ms
54:256M,16K/16ms
55:256M,4K/32ms
56:256M,8K/64ms
57:256M,16K/32ms
58:256M,8K/32ms
62:64M,2K/16ms
64:64M,4K/64ms
9.Interface,VDD,VDDQ
8.Bank
68:768M,8K/64msU:DRSL,1.8V,1.2V
72:72M,8K/32ms
76:576M,32K/32ms
80:8M,2K/32ms
88:288M,16K/32ms
89:288M,8K/32ms
1G:1G,8K/64ms
2G:2G,8K/64ms
4G:4G,8K/64ms
2A:128M,4K/64ms with TCSR
5A:256M,8K/64ms with TCSR
6A:64M,4K/64ms with TCSR
6~7.Organization
01:x1 02:x2 03:x2
(Including x1)
04:x4 05:x4 (2CS)
06:x4 Stack (Flexframe)
07:x8 Stack (Flexframe)
08:x8 09:x9 15:x16 (2CS)
16:x16 17:x16 (Including x8/ x4)
31:x32 (2CS) 32:x32 36:x36
1:1Bank 2:2Bank 3:4Bank
4:8Bank 5:16Bank 6:32Bank
0:NONE,NONE,NONE
1:TTL,5.0V,5.0V
2:LVTTL,3.3V,3.3V
3:LVTTL,3.0V,3.0V
4:LVTTL,2.5V,2.5V
5:SSTL(LP),1.8V,1.8V
6:SSTL,1.5V,1.5V
7:SSTL-2,3.3V,2.5V
8:SSTL-2,2.5V,2.5V
9:RSL,2.5V,2.5V
A:SSTL,2.5V,1.8V
H:SSTL-2 DLL,3.3V,2.5V
J:LVTTL,3.0V,1.8V
L:LVTTL,2.5V,1.8V
M:LVTTL,1.8V,1.5V
N:LVTTL,1.5V,1.5V
P:LVTTL,1.8V,1.8V
Q:SSTL,1.8V,1.8V
R:SSTL-2,2.8V,2.8V
12.Package
- Advanced DRAMTechnology
G:WBGA L:TSOP2-400F(LF)
T:TSOP2 Z:BOC(LF)
J:TSOP2-400(LF,DDP) T:TSOP2-400
K:TSOP2-400(DDP) U:TSOP2-400(LF)
G:BOC,WBGAZ:BOC(LF)
P:BOC(DDP) Q:ISM
N:STSOP2 V:STSOP2(LF)
S:POP(DDP) X:POP(LF,DDP)
- DDR SDRAM II
G:BOC Z:BOC(LF)
S:BOC(Smaller) Y:BOC(Smaller,LF)
R:WLP
- DDR3 SDRAM
G:BOCZ:BOC(LF)
- DDR SGRAM
E:FBGA(LF,DDP) G :FBGA
J:FBGA(DDP) V:FBGA(LF)
P:FBGA(LLDDP) M:FBGA(1DQS)
N:FBGA(1DQS,LF) H:BOC
L:TSOP2-400(LF)T:TSOP2-400
Q:TQFP U:TQFP(LF)
18:x18 30:x32 (2CS,2CKE)
A8:x8 Stack (70-mono)
11.“ ----”
Y:SSTL(LP),2.5V,2.5V
10.Generation
M:1st Generation
A:2nd Generation
B:3rd Generation
C:4th Generation
D:5th Generation
E:6th Generation
F:7th Generation
G:8th Generation
H:9th Generation
I:10th Generation
J:11th Generation
K:12th Generation
Y:Partial DRAM(2nd)
Z:Partial DRAM (for RAMOSTAK Product)
SEPTEMBER 2006BR-06-ALL-001
SAMSUNG SEMICONDUCTOR,INC.
9a
DRAM ORDERING INFORMATION
K 4 X X X X X X X X - X X X X X X X
1 2 3 4 5 6 7 8 910 1112 131415161718
- DDR SGRAM IIMobile DDR SDRAM
G:FBGA,BOC Z:BOC (LF)1:MCP 6:MCP(LF)
- GDDR3 SDRAM4:96-FBGA 5:96-FBGA(LF)
A:136-FBGA,BOC B:136-FBGA,BOC(LF)7:90-FBGA 8:90-FBGA(LF)
G:FBGA,BOC V:FBGA,BOC(LF)F:WBGA(LF,0.8MM) J:WBGA
- Direct RDRAML:WBGA(0.8MM) T:TSOP2
F:WBGA G:WBGA(LF)3)V:WBGA(LF) Q:ISM
H:WBGA(LF,B/ L 320) J:MWBGA(LF)S:POP X:POP(LF,DDP)
M:µBGApackages(M)Mobile DDR SDRAM PEA
®1)2)
N:µBGApackages6:POP MONO(LF) 7:90-FBGA
®
P:MWBGA R:54-WBGA8:90-FBGA(LF) F:60-FBGA(LF)
S:54-µBGApackages T:54-WBGA(LF)L:60-FBGA Q:ISM
®
- EDOS:POP(DDP) X:POP(LF,DDP)
B:SOJ-300 J:SOJ-400XDR DRAM
N:STSOP2J:BOC(LF) P:BOC
T:TSOP2-400 U:TSOP2-400(LF)SDRAM
F:TSOP2-300 H:TSOP2-300(LF)1:MCP 2:90-FBGA(DDP)
- FP3:90-FBGA(DDP,LF) 4:96-FBGA
B:SOJ-300 J:SOJ-4005:96-FBGA(LF) A:52-CSP(LF)
F:TSOP2-300 H:TSOP2-300(LF)G:CSP(except 54 Pin) R:54-CSP
N:STSOP2B:54-CSP(LF) D:90-FBGA(LF)
T:TSOP2-400 U:TSOP2-400(LF)E:90-FBGA (LF,MCP) S:90-FBGA
- Mobile SDRAMM:90-FBGA(MCP) F:Smaller 90FBGA
1:MCP 6:MCP(LF)H:Smaller 90FBGA(LF) K:TSOP2-400(DDP)
2:90-FBGA(DDP) 3:90-FBGA(DDP,LF)N:STSOP2 V:STSOP2(LF)
4:96-FBGA 5:96-FBGA(LF)T:TSOP2-400 U:TSOP2-400(LF)
R:54-CSP B:54-CSP(LF)Y:54-CSP(DDP) P:54-CSP(LF,DDP)
J:WBGA V:WBGA(LF)X:BOC Z:BOC(LF)
M:FBGA(MCP) E:FBGA(LF,MCP)DRAM COMMON
F:Smaller 90 FBGAC:CHIP BIZ W:WAFER
H:Smaller 90 FBGA(LF)(M):Mirror (LF):Lead Free
Y:54-CSP(DDP) P:54-CSP(LF,DDP)
T:TSOP2-400 Q:ISM
S:90-FBGA D:90-FBGA(LF)
Mobile SDRAM PEA
F:Smaller 90-FBGA
H:Smaller 90-FBGA(LF)
S:90-FBGA D:90-FBGA(LF)
13.Temp,Power
- COMMON (Temp,Power)
0:NONE,NONE
A:Automotive,Normal
C:Commercial,Normal
J:Commercial,Medium
L:Commercial,Low
F:Commercial,Low,PASR & TCSR
B:Commercial,Super Low
R:Commercial,Super Low,PASR & TCSR
K:Commercial,Reduced
E:Extended,Normal
N:Extended,Low
G:Extended,Low,PASR & TCSR
U:Extended,Super Low
S:Extended,Super Low,PASR & TCSR
X:Extra Extend,Normal
I:Industrial,Normal
P:Industrial,Low
H:Industrial,Low,PASR & TCSR
D:Industrial,Super Low
T:Industrial,Super Low,PASR & TCSR
- WAFER,CHIP BIZ Level Classification
0:NONE,NONE
1:DC test only
2:DC test,WBI
3:DC,several AC test,WBI
14~15.Speed (Wafer/Chip Biz/BGD:00)
- DDR SDRAM
A0:10ns@CL2 A1:8ns
A2:7.5ns@CL2
AA :7.5ns@CL2,TRCD2,TRP2
B0:7.5ns@CL2.5 B3:6ns@CL2.5
B4:5ns@CL2.5 C3:6ns@CL3
C4:5ns@CL3 C5:3.75ns@CL3
CA:5.5ns@CL3
CC:5ns@CL3,TRCD3,TRP3 CD:4ns@CL3
CE:5ns@CL3,TRCD3,TRPS3(2.5V)
D4:5ns@CL4 DS:Daisychain
M0:10ns@CL1.5
S0:SH BIN(TPB) V0:SH 2/ 2/ 2 BIN
W0:SH 3/ 3/ 3 BIN X0:Uniq.BIN
Y0:SH 3/ 4/ 4 BIN
- DDR SDRAM II
C4:5ns@CL3 C5:3.75ns@CL3
CC:5ns@CL3,TRCD3,TRP3
CF:3.75ns@CL3(1.9V)
D4:5ns@CL4 D5:3.75ns@CL4
D6:3.0ns@CL4 D7:2.5ns@CL4
DH:3ns@CL4(1.9V)
DS:Daisychain Sample E4:5ns@CL5
E5:3.75ns@CL5 E6:3.0ns@CL5
E7:2.5ns@CL5 F6:3.0ns@CL6
F7:2.5ns@CL6
- DDR3 SDRAM
E7:2.5ns@CL5 F6:3.0ns@CL6
F7:2.5ns@CL6
10a
SAMSUNG SEMICONDUCTOR,INC.
BR-06-ALL-001SEPTEMBER 2006
DRAM ORDERING INFORMATION
K 4 X X X X X X X X - X X X X X X X
1 2 3 4 5 6 7 8 910 1112 131415161718
- EDO & FP (tRAC)- Mobile DDR SDRAM PEA- GDDR3 SDRAM
40:40ns 45:45nsC3:7.5ns@CL3 C6:6ns@CL311:1.1ns 12:1.25ns
50:50ns 60:60nsCA:9ns@CL314:1.429ns 15:1.5ns(667MHz)
- Direct RDRAM (tCC,tRAC)- Mobile L2RAM16:1.667ns 18:1.818ns
C6:300MHz,53.3ns w/ consumer PKGL0:100Mhz,CL3 L1:133Mhz,CL320:2.0ns 22:2.2ns
C8:400MHz,45ns w/ consumer PKGL2:166Mhz,CL425:2.5ns 30:3.0ns
C9:533MHz,32ns w/ consumer PKG- SDRAM (tCC:Default CL3)33:3.3ns 36:3.6ns
G6:300MHz(3.3ns),53.3ns10:10ns,PC66 12:12ns40:4.0ns 1A:1.0ns
K7:356MHz(2.8ns),45ns15:15ns2A:2.86ns
K8:400MHz(2.5ns),45ns1H:10ns@CL2,PC100 1L:10ns,PC100- GDDR4 SDRAM
M8:400MHz(2.5ns),40ns33:3.3ns 40:4ns15:1.5ns(667MHz)
M9:533MHz(1.9ns),35ns45:4.5ns 50:5ns
N1:600MHz(1.667ns),32ns55:5.5ns 56:5.6ns
N9:533MHz(1.9ns),32ns60:6ns 67:6.7ns
P3:667Mhz(1.5ns),31ns70:7ns 74:7.4ns
R6:800Mhz(1.25ns),27ns75:7.5ns,PC133
S8:400MHz,45ns SC7B:7.5ns PC133,CL3,TRCD2,TRP2
S9:533MHz(1.9ns),35ns SC7C:7.5ns PC133,CL2,TRCD2,TRP2
T9:533MHz(1.9ns),32ns,tDAC 380:8ns 90:9ns
DS:Daisychain Sample96:9.6ns
*SC (Short channel)DP:Daisychain (PCB) DS:Daisychain
- Mobile SDRAMDY:Daisychain (Sanyo PCB)
15:15ns@CL2 1H:10ns@CL2< Only SDRAM TPB Code >
1L:10ns@CL3 75:7.5ns@CL3S0:7.0ns BINT0:5.5ns BIN
80:8ns@CL3U0:6.0ns BIN V0:7.5ns BIN
90:9.0ns@CL3(12ns@CL2)W0:8.0ns BIN G0:5.6ns BIN
95:9.5ns@CL3(12ns@CL2)-DDR SGRAM (tCC:Default CL3)
DP:Daisychain (PCB)20:2.0ns 21:2.1ns(475MHz)
DS:Daisychain Sample22:2.2ns(450MHz) 25:2.5ns
DY:Daisychain (Sanyo PCB)30:3ns 33:3.3ns
- Mobile SDRAM PEA35:3.5ns 36:3.6ns
1L:10ns@CL3 60:6ns@CL33N 3.32ns(301MHz) 40:4ns
75:7.5ns@CL345:4.5ns 50:5ns
90:9.0ns@CL3(12ns@CL2)55:5.5ns 60:6ns
- Mobile DDR SDRAM70:7ns 2A:2.86ns(350MHz)
C0:15ns@CL3 C2:10ns@CL32B:2.94ns(340MHz) 2C:2.66ns(375MHz)
C3:7.5ns@CL3 C6:6ns@CL35A:5ns@CL3(TRCD3,TRP3)
CA:9ns@CL3< Only SDRAM TPB Code>
DP:Daisychain (PCB)S0:4.0ns BIN
DS:Daisychain- DDR SGRAM II
DY:Daisychain (Sanyo PCB)12:1.25ns 14:1.429ns
XDR DRAM
A2:2.4Gbps,36ns,16Cycles
A3:3.2Gbps,27ns,16Cycles
B3:3.2Gbps,35ns,20Cycles
B4:4.0Gbps,28ns,20Cycles
C3:3.2Gbps,35ns,24Cycles
C4:4.0Gbps,28ns,24Cycles
DS:Daisychain Sample
DRAM COMMON
00:NONE
16.Packing Type (16 digit)
Common to all products,except of Mask ROM
Divided into TAPE & REEL(In Mask ROM,divided into
TRAY,AMMO Packing Separately)
15:1.5ns (667MHz) 16:1.667ns
18:1.818ns 1K:1.996ns
2A:2.86ns(350MHz) 20:2ns
22:2.2ns 25:2.5ns
30:3.0ns 33:3.3ns
37:3.75ns
NOTES:
1) µgBGA® packages are registered trademarks of Tessera.
2) (M):Mirror
3) (LF):Lead Free
Type Packing Type New Marking
ComponentTAPE & REEL T
Other (Tray,Tube,Jar) 0 (Number)
Stack S
ComponentTRAY Y
(Mask ROM)AMMO PACKING A
ModuleMODULE TAPE & REEL P
MODULE Other Packing M
SEPTEMBER 2006BR-06-ALL-001
SAMSUNG SEMICONDUCTOR,INC.
11a
NAND FLASH DISCRETE COMPONENTS
DensityPart NumberPart NumberOrganizationVoltage(V)PackageComments
SLC
256MbK9F5608U0D-PCBK9F5608U0D-JIBx83.3V48TSOP,63FBGA
512MbK9F1208U0B-PCBK9F1208U0B-JIBx83.3V48TSOP,63FBGABest case for S/B long-term support
1GbK9F1G08U0A-PCBK9F1G08U0A-JIBx83.3V48TSOP,63FBGAMoving to B-die in Q4'06
2GbK9F2G08U0A-PCBK9F2G08U0A-IIBx83.3V48TSOP,52ULGA
4GbK9F4G08U0A-PCBK9F4G08U0A-IIBx83.3V48TSOP,52ULGA
8GbK9K8G08U0A-PCBK9K8G08U0A-IIBx83.3V48TSOP,52ULGA
16GbK9WAG08U1A-PCBK9WAG08U1A-IIBx83.3V48TSOP,52TLGA
32GbK9NBG08U5A-PCBN/Ax83.3VDSP 48TSOP
MLC
8GbK9G8G08U0M-PCBN/Ax83.3V48TSOP
16GbK9LAG08U0M-PCBN/Ax83.3V48TSOP
32GbK9HBG08U1M-PCBN/Ax83.3V48TSOP
NOTE:All parts lead free
TSOPBGA/LGA
OneNANDFLASH
™
DensityPart NumberOrganizationPackageVoltage(V)TemperatureComments
128MbKFG2816U1M-PIB0000x16 48TSOP (12x20)3.3VIndustrial
KFG2816Q1M-DEB0000x16 67 FBGA 1.8V Extended
KFG2816U1M-DIB0000x16 (7x9) 3.3V Industrial
KFG5616Q1M-PEB0000256Mbx16 48 TSOP 1.8V Extended No New Design
KFG5616U1A-PIB5000256Mbx16 48TSOP (12x20) 3.3V Industrial
KFG5616Q1A-DEB5000x16 67 FBGA 1.8V Extended
KFG5616U1A-DIB5000x16 (7x9) 3.3V Industrial
KFG1216Q2A-DEB5000 512Mbx16 63 FBGA 1.8V Extended
KFG1216U2A-DIB5000x16 (9.5x12) 3.3V Industrial
KFG1G16Q2M-DEB50001Gbx16 63 FBGA(10x13) 1.8V Extended No New Design
KFG1G16Q2A-DEB6000x16 63 FBGA(10x13) 1.8V Extended
KFH2G16Q2M-DEB50002Gb DDPx16 63 FBGA (11x13) 1.8V Extended No New Design
KFG2G16Q2M-DEB60002Gb monox16 63 FBGA (11x13) 1.8V Extended
KFW4G16Q2M-DEB50004Gb QDPx16 63 FBGA (11x13) 1.8V Extended No New Design
KFN4G16Q2M-DEB80004Gb DDPx16 63 FBGA (11x13) 1.8V Extended
All parts lead freeNOTE:
NOR FLASH
DensityPart NumberPart NumberArchitectureVoltageTemperatureComments
16MbK8D1716UTC-PI07K8D1716UTC-FI07Top3.3VIndustrialDual Bank,Async
32MbK8D3216UTC-PI07N/ATop3.3VIndustrialDual Bank,Async
TSOP FBGA Block
K801716UBC-PI07K8D1716UBC-FI07Bottom3.3VIndustrialDual Bank,Async
K8D3216UBC-PI07N/ABottom3.3VIndustrialDual Bank,Async
N/AK8S3215ETE-SE7CTop1.8VIndustrialMux'd Burst
K8D6316UTM-PI07K8D6316UTM-DI0764MbTop3.3VIndustrialDual Bank,Async
K8D6316UBM-PI07K8D6316UBM-DI07Bottom3.3VIndustrialDual Bank,Async
N/AK8S6415ETB-DE7CTop1.8VExtendedMux'd Burst
N/AK8S2815ETB-SE7C128MbTop1.8VExtendedMux'd Burst
N/AK8S5615ETA-SE7C256MbTop1.8VExtendedMux'd Burst
All parts lead freeNOTE:
12a
SAMSUNG SEMICONDUCTOR,INC.
BR-06-ALL-001SEPTEMBER 2006
NAND FLASH ORDERING INFORMATION
K 9 X X X X X X X X - X X X X X X X
1 2 3 4 5 6 7 8 910 1112 131415161718
1.Memory (K)8.Vcc13.Temp
2.NAND Flash:9
3.Small Classification (SLC:Single Level Cell,MLC:
Multi Level Cell,SM:SmartMedia,S/B:Small Block)
A:SLC + Muxed I/F Chip
B:Muxed I/F Chip
S:SLC Single SM
D:SLC Dual SM
Q:4CHIP SM
T:SLC SINGLE (S/B)
E:SLC DUAL (S/B)
R:SLC 4DIE STACK (S/B)
F:SLC Normal
G:MLC Normal
K:SLC 2-Die Stack
W:SLC 4-Die Stack
J:Non-Muxed OneNAND
U:2 STACK MSP
V:4 STACK MSP
4~5.Density
12:512M 16:16M
28:128M 32:32M
40:4M 56:256M
64:64M 80:8M
1G:1G 2G:2G
4G:4G 8G:8G(Mask ROM)AMMO PACKING A
00:NONE
6~7.Organization
00:NONE 08:x8
16:x16
C:5.0V(4.5V~5.5V) C:Commercial I:Industrial
D:2.65V(2.4V~2.9V) 0:NONE
E:2.3V~3.6V
Q:1.8V(1.7V~1.95V)
T:2.4V~3.0V
U:2.7V~3.6V
V:3.3V(3.0V~3.6V)
W:2.7V~5.5V,3.0V~5.5V
0:NONE
9.Mode
O:Normal
1:Dual nCE & Dual Rn/B
4:Quad nCE & Single RnB
A:Mask Option 1
10.Generation
M:1st Generation
A:2nd Generation
B:3rd Generation
C:4th Generation
D:5th Generation
Y:Partial NAND(2nd)
Z:Partial NAND(1st)
M:1st Generation
A:2nd Generation
B:3rd Generation
C:4th Generation
D:5th Generation
Y:Partial NAND(2nd)
Z:Partial NAND(1st)
11.“--”
12.Package
A:COB B:TBGA
C:CHIP BIZ D:63-TBGA
E:TSOP1(LF,1217)F:WSOP1(LF)
G:FBGA H:TBGA(LF)
J:FBGA(LF) K:TSOP1(1217)
L:LGA M:tLGA
P:TSOP1(LF) Q:TSOP2(LF)
R:TSOP2-R S:SMARTMEDIA
T:TSOP2 V:WSOP
W:WAFER Y:TSOP1
14.Bad Block
B:Include Bad Block
D:Daisychain Sample
L:1~5 Bad Block
N:Ini.All Good,Add.10 Blocks
S:All Good Block
0:NONE
15.NAND-Reserved
0:Reserved
16.Packing Type (16 digit)
Common to all products,except of Mask ROM
Divided into TAPE & REEL(In Mask ROM,divided into
TRAY,AMMO Packing Separately)
Type Packing Type New Marking
ComponentTAPE & REEL T
Other (Tray,Tube,Jar) 0 (Number)
Stack S
ComponentTRAY Y
ModuleMODULE TAPE & REEL P
MODULE Other Packing M
SEPTEMBER 2006BR-06-ALL-001
SAMSUNG SEMICONDUCTOR,INC.
13a
LOW-POWER (5V) SRAM
DensityPart NumberOrganizationVcc (V)Speed(ns)TempCurrent (mA)Current (uA)PackageStatus
8MbitK6X8008C2B1Mx84.5 - 5.555,70C,I5050TSOP2(44)EOL
4MbitK6X4016C3F256x164.5 - 5.555,70I,A5020,30TSOP2(44)EOL
1MbitK6T1008C2E128x84.5 - 5.555,70C,I501032DIP,32SOP,TSOP1(32)EOL
256KbitK6T0808C1D32x84.5 - 5.555,70C,I60528SOP,TSOP1(28)EOL
K6X8016C3B512x164.5 - 5.555,70C,I6050TSOP2(44)EOL
K6X4008C1F512x84.5 - 5.555,70I,A4020,3032SOP,TSOPEOL
K6X1008C2D128x84.5 - 5.555,70I,A3515,2532SOP,TSOP1(32)EOL
K6X0808C1D32x84.5 - 5.555,70C,I352528SOPEOL
Operating Operating StandbyProduction
NOTE:Lead-free available upon request
LOW-VOLTAGE & LOW-POWER SRAM
DensityPart NumberOrganizationVcc (V)Speed (ns)TempCurrent (mA)Current (uA)PackageStatus
8MbitK6X8008T2B1024Kx82.7 - 3.655,70C,I4040TSOP2(44)EOL
4MbitK6X4008T1F512x82.7 - 3.670,85I,A3020,3032SOP,TSOP2(32)EOL
1MbitK6F1008U2C128x82.7 - 3.355,70I20.532TSOP1EOL
K6X8016T3B512Kx162.7 - 3.655,70C,I4540TSOP2(44)EOL
K6X4016T3F256x162.7 - 3.670,85I,A4020,30TSOP2(44)EOL
K6X1008T2D128x82.7 - 3.670,85I,A2510,2032SOP,TSOP2(32)EOL
K6F1008V2C128x83.0 - 3.655,70I30.525SOP1EOL
Operating Operating StandbyProduction
MICRO-POWER & LOW-VOLTAGE SRAM
DensityPart NumberOrganizationVcc (V)Speed (ns)TempCurrent (mA)Current (uA)PackageStatus
16MbitK6F1616U6C1x162.7 - 3.355,70I3148-FBGAEOL,LTB due no later than 12/31/06
8MbitK6F8016R6B512x161.65 - 2.270,85I3148-TBGAEOL
4MbitK6F4008R2G512Kx81.65 - 2.2070,85I20.536TBGAEOL,LTB due no later than 12/31/06
K6F1616R6C1x161.65 - 2.270I3148-FBGAEOL,LTB due no later than 12/31/06
K6F8016U6B512x162.7 - 3.355,70I4148-TBGAEOL
K6F4008U2G512Kx82.7 - 3.345,55,70I20.536TBGAEOL,LTB due no later than 12/31/06
K6F4016R4E256Kx161.65 - 2.2070,85I20.548TBGAEOL,LTB due no later than 12/31/06
K6F4016R6G256Kx161.65 - 2.2070,85I20.548TBGAEOL,LTB due no later than 12/31/06
K6F4016U4G256Kx162.7 - 3.355,70I20.548TBGAEOL,LTB due no later than 12/31/06
K6F4016U6G256Kx162.7 - 3.355,70I20.548TBGAEOL,LTB due no later than 12/31/06
K6F2016U4E128x162.7 - 3.355,70I20.548-TBGAEOL2Mbit
K6F2016R4E128x161.65 - 2.270,85I20.548-FBGAEOL
K6F2008U2E256x82.7 - 3.355,70I20.532TSOP1EOL
K6F2008V2E256x83.0 - 3.655,70I30.532TSOP1EOL
K6F1016U4C64x162.7 - 3.355,70I20.548-FBGAEOL1Mbit
Operating Operating StandbyProduction
14a
SAMSUNG SEMICONDUCTOR,INC.
BR-06-ALL-001SEPTEMBER 2006
UtRAM (High Density & Low Power)
DensityPart NumberOrganizationVcc (V)Speed (ns)TempCurrent (mA)Current (uA)PackageStatus
32MbitK1S321615M2Mx163100E2015048-TBGAEOL
K1S321611C2Mx16370I3510048-FBGAMass Production
K1S32161CD2Mx16370I3510048-FBGAMass Production
K1S32161BCD2Mx161.870I3510048-FBGAMass Production
K1S32161CD2Mx16370E3510048-TBGAMass Production
K1S161615M1Mx16370I207048-TBGAEOL16Mbit
K1S1616B1M1Mx161.870I356048-TBGAEOL
Operating Operating StandbyProduction
HIGH-SPEED (4Mbit) ASYNCHRONOUS FAST SRAM
DensityPart NumberOrganizationVcc (V)Speed (ns)TempCurrent (mA)Current (uA)PackageStatus
4MbitK6R4016C1D256Kx16510I65,5520,544SOJ,44TSOP2,48TBGAMass Production
K6R4016V1D256Kx163.310I80,6520,5(1.2)44SOJ,44TSOP2,48TBGAMass Production
K6R4004C1D1Mx4510,12I65,5520,532 SOJEOL
K6R4004V1D1Mx43.38,10I80,6520,532 SOJEOL
K6R4008C1D512Kx8510I65,5520,536 SOJ,44 TSOP2Mass Production
K6R4008V1D512Kx83.310I80,6520,536 SOJ,44 TSOP2Mass Production
K6R3024V1D128x243.39,10,12C,I170,150,13040,15119PBGAEOL3Mbit
K6R1008V1D128x83.38,10,12C,I170,150,13020,532SOJ,32TSOP2EOL1Mbit
K6R1008C1D128x8510,12,15C,I170,150,13020,532SOJ,32TSOP2EOL
K6R1004V1D256x43.38,10,12C,I170,150,13020,532SOJEOL
K6R1004C1D256x4510,12,15C,I170,150,13020,532SOJEOL
K6R1016V1D64x163.38,10,12C,I170,150,13020,544SOJ,44TSOP2,48TBGAEOL
K6R1016C1D64x16510,12,15C,I170,150,13020,544SOJ,44TSOP2,48TBGAEOL
Operating Operating StandbyProduction
NOTE:Ordering Information:/Products/Semiconductor/Support/Label_CodeInfo/Async_
SEPTEMBER 2006BR-06-ALL-001
SAMSUNG SEMICONDUCTOR,INC.
15a
ASYNCHRONOUS SRAM ORDERING INFORMATION
K 6 X X X X X X X X - X X X X X X X
1 2 3 4 5 6 7 8 910 1112 131415161718
1.Memory (K)10.Generation14~15.Speed(AA)
2.Async SRAM:6
3.Small Classification
E:Corner Vcc/Vss + Fast SRAM
F:fCMOS Cell + LPSRAM
H:High Speed(LPSRAM)
X:High Voltage(LPSRAM)
J:BICMOS
L:Poly Load Cell + LPSRAMA:TBGA(LF) B:SOP(LF)
R:Center Vcc/Vss + Fast SRAMC:CHIP BIZ D:DIP
T:TFT Cell + LPSRAME:TBGA F:FBGA
4~5.Density
06:64K 08:256K 09:512K
10:1M 16:16M 20:2M
30:3M 32:32M 40:4M
60:6M 64:64M 80:8M
6~7.Organization
01:x104:x4 08:x8
16:x16 18:x18 24:x24
32:x32
8.Vcc
5:1.5V C:5.0V
Q:VDD 3.0V/VDDQ 1.8V
R:1.65V~2.2V
S:2.5V T:2.7V~3.6V U:3.0V
V:3.3V W:2.2V~3.3V
9.Mode
1:CS Low Active
2:CS1,CS2 - Dual Chip Select Signal
3:Single Chip Select with /LB,/UB(tOE)
4:Single Chip Select with /LB,/UB(tCS)
5:Dual Chip Select with /LB,/UB(tOE)
6:Dual Chip Select with /LB,/UB(tCS)
7:I/Os Control with /BYTE
8:CDMA Function
9:Multiplexed Address
A:Mirror Chip Option
13.1st Chip Speed
- COMMON (Temp,Power)
A:Automotive,Normal
B:Commercial,Low Low
C:Commercial,Normal
D:Extended,Low Low
E:Extended,Normal
F:Industrial,Low Low
I:Industrial,Normal
L:Commercial,Low
M:Military,Normal
N:Extended,Low
P:Industrial,Low
Q:Automotive,Low
R:Industrial,Super Low
T:Extended,Super Low
U:Commercial,Ultra Super Low
0:NONE,NONE
- WAFER,CHIP BIZ Level Division
0:NONE,NONE
1:Hot DC sort
2:Hot DC,selected AC sort
3:Cold/Hot DC,selected AC sort
M:1st Generation- fCMOS Cell + LPSRAM & Poly Load Cell +
A:2nd GenerationB:3rd GenerationLPSRAM & TFT Cell + LPSRAM
C:4th GenerationD:5th Generation10:100ns
E:6th GenerationF:7th Generation12:120ns
G:8th GenerationH:9th Generation15:150ns
11." ----"
12.Package
G:SOP H:BGA
J:SOJ K:SOJ(LF)
L:TSOP1-0813.4F(LF)
P:TSOP1-0820F(LF)
Q:TSOP2-400R(LF) R:TSOP-R
T:TSOP U:TSOP2-400(LF)
W:WAFER Z:UBGA
* Exception
- 1MFSRAM B-ver
32-SOJ-300 > S
28-SOJ-300 > S
- 512K/1M/2M/4M LPSRAM
32-TSOP1-0813.4F > Y
32-TSOP1-0813.4 > Y
32-TSOP1-0813.4R > N
- 4M LPSRAM
32-TSOP2-400F > V
32-TSOP2-400R > M
t
25:25ns(only fCMOS Cell)
30:300ns
35:35ns(except Poly Load Cell)
45:45ns(except fCMOS Cell)
55:55ns
60:60ns(only fCMOS Cell)
70:70ns
85:85ns
90:90ns(only fCMOS Cell)
DS:Daisychain Sample
- High Speed (LPSRAM)
20:20ns 25:25ns
- High Voltage (LPSRAM)
55:55ns 70:70ns 85:85ns
- Corner Vcc/Vss + Fast SRAM
10:10ns 12:12ns 13:13ns
15:15ns 17:17ns 20:20ns
25:25ns 30:30ns 35:35ns
45 :45ns
- BICMOS & Center Vcc/Vss + Fast SRAM
06:6ns 08:8ns 09:9ns
10:10ns 12:12ns 13:13ns
15:15ns 17:17ns 20:20ns
25:25ns
30:30ns(only Center Vcc/Vss + Fast SRAM)
35:35ns(only Center Vcc/Vss + Fast SRAM)
7A:7.2ns(only BICMOS)
8A:8.6ns(only BICMOS)
DS:Daisychain Sample
- Async SRAM COMMON
00:NONE
(Containing Wafer,CHIP BIZ,Exception code)
16.Packing Type (16 digit)
- Common to all products,except of Mask ROM
- Divided into TAPE & REEL(In Mask ROM,divided into
TRAY,AMMO Packing Separately)
Type Packing Type New Marking
ComponentTAPE & REEL T
Other (Tray,Tube,Jar) 0 (Number)
Stack S
ComponentTRAY Y
(Mask ROM)AMMO PACKING A
ModuleMODULE TAPE & REEL P
MODULE Other Packing M
16a
SAMSUNG SEMICONDUCTOR,INC.
BR-06-ALL-001SEPTEMBER 2006
SPB & FT (36Mbit) SRAM
PartOperating Access TimeSpeedI/O Production
NumberOrganizationModeVdd (V)tCD(ns)CYC (MHz)Voltage (V)PackageStatusComments
K7A323600M1Mx36SPB3.32.6,3.1,4.0250,200,1383.3,2.5100TQFP (L / LF)EOL in Q1`072E1D
K7A321800M2Mx18SPB3.32.6,3.1,4.0250,200,1383.3,2.5100TQFP (L / LF)EOL in Q1`072E1D
K7B323625M1Mx36SB3.36.5,7.5133,1183.3,2.5100TQFP (L / LF)EOL in Q1`07-
K7B321825M2Mx18SB3.36.5,7.5133,1183.3,2.5100TQFP (L / LF)EOL in Q1`07-
K7A323630C1Mx36SPB3.3,2.53.12003.3,2.5100TQFP (LF(Lead Free) only)Q3`06 (E/S)2E1D
K7A321830C2Mx18SPB3.3,2.53.12003.3,2.5100TQFP (Lead Free only)Q3`06 (E/S)2E1D
K7B323635C1Mx36SB3.3,2.57.51183.3,2.5100TQFP (Lead Free only)Q3`06 (E/S)-
K7B321835C2Mx18SB3.3,2.57.51183.3,2.5100TQFP (Lead Free only)Q3`06 (E/S)-
t
NOTES:2E1D = 2-cycle Enable and 1-cycle Disable
NOTES:200MHz could cover 167MHz,133MHz speed option
SPB & FT (18Mbit) SRAM
PartOperating Access TimeSpeedI/O Production
NumberOrganizationModeVdd (V)tCD(ns)CYC (MHz)Voltage (V)PackageStatusComments
K7A163630B512Kx36SPB3.3,2.52.6,3.5250,1673.3,2.5100TQFP (LF only from 2H`07) Mass Production2E1D
K7A163631B512Kx36SPB3.3,2.53.12003.3,2.5100TQFP (LF only from 2H`07) Mass Production2E2D
K7A161830B1Mx18SPB3.3,2.52.6,3.5250,1673.3,2.5100TQFP (LF only from 2H`07) Mass Production2E1D
K7A161831B1Mx18SPB3.3,2.53.12003.3,2.5100TQFP (LF only from 2H`07) Mass Production2E2D
K7B163635B512Kx36SB3.3,2.57.51173.3,2.5100TQFP (LF only from 2H`07) Mass Production-
K7B161835B1Mx18SB3.3,2.57.51173.3,2.5100TQFP (LF only from 2H`07) Mass Production-
t
NOTES:2E1D = 2-cycle Enable and 1-cycle Disable 2E2D = 2-cycle Enable and 2-cycle Disable
NOTES:250MHz could cover 200MHz speed option / 167MHz could cover 133MHz speed option
SPB & FT (8Mbit) SRAM
PartOperating Access TimeSpeedI/O Production
NumberOrganizationModeVdd (V)tCD(ns)CYC (MHz)Voltage (V)PackageStatusComments
K7A803600B256x36SPB3.33.5,3.8167,1383.3,2.5100TQFP (LF only from 2H`07) Mass Production2E1D
K7A803609B256x36SPB3.32.62503.3,2.5100TQFP (LF only from 2H`07) Mass Production2E1D
K7A801800B512x18SPB3.33.5,3.8167,1383.3,2.5100TQFP (LF only from 2H`07) Mass Production2E1D
K7A801809B512x18SPB3.32.62503.3,2.5100TQFP (LF only from 2H`07) Mass Production2E1D
K7B803625B256x36SB3.36.5,7.5133,1173.3,2.5100TQFP (LF only from 2H`07) Mass Production-
K7B801825B512x18SB3.36.5,7.5133,1173.3,2.5100TQFP (LF only from 2H`07) Mass Production-
t
NOTES:2E1D = 2-cycle Enable and 1-cycle DisableRecommended speed options for SPB are 250MHz and 167MHz
2E2D = 2-cycle Enable and 2-cycle DisableRecommended access speed option for SB is 6.5ns
SPB & FT (4Mbit) SRAM
PartOperating Access TimeSpeedI/O Production
NumberOrganizationModeVdd (V)tCD(ns)CYC (MHz)Voltage (V)PackageStatusComments
K7A403600B128Kx36SPB3.33.5,4.0167,1383.3,2.5100TQFP (LF only from 2H`07) Mass Production2E1D
K7A401800B256Kx18SPB3.33.5,4.0167,1383.3,2.5100TQFP (LF only from 2H`07) Mass Production2E1D
K7A403609B128Kx36SPB3.32.4,2.8250,2003.3,2.5100TQFP (LF only from 2H`07) Mass Production2E1D
K7A401809B256Kx18SPB3.32.4,2.8250,2003.3,2.5100TQFP (LF only from 2H`07) Mass Production2E1D
K7A403200B128Kx32SPB3.33.5,4.0167,1383.3,2.5100TQFP (LF only from 2H`07) Mass Production2E1D
K7B403625B128Kx36SB3.36.5,7.5133,1183.3,2.5100TQFP (LF only from 2H`07) Mass Production
K7B401825B256Kx18SB3.36.5,7.5133,1183.3,2.5100TQFP (LF only from 2H`07) Mass Production
t
NOTES:2E1D = 2-cycle Enable and 1-cycle Disable 2E2D = 2-cycle Enable and 2-cycle Disable
NOTES:250MHz could cover 200MHz speed option / 167MHz could cover 133MHz speed option
SEPTEMBER 2006BR-06-ALL-001
SAMSUNG SEMICONDUCTOR,INC.
17a
SPB & FT (2Mbit) SRAM
PartOperating Access TimeSpeedI/O Production
NumberOrganizationModeVdd (V)tCD(ns)CYC (MHz)Voltage (V)PackageStatusComments
K7A203600B64Kx36SPB3.341382.5,3.3100 TQFPWill be EOL'd in Q1`072E1D
K7A203200B64Kx32SPB3.341382.5,3.3100 TQFPWill be EOL'd in Q1`072E1D
t
2E2D = 2-cycle Enable and 2-cycle DisableNOTES:2E1D = 2-cycle Enable and 1-cycle Disable
NtRAM (72Mbit) SRAM
PartOperating Access TimeSpeedI/O Production
NumberOrganizationModeVdd (V)tCD(ns)CYC (MHz)Voltage (V)PackageStatus
K7N643645M2Mx36SPB2.52.6,3.5250,1672.5100TQFP(LF Only),165FBGAMass Production
K7N641845M4Mx18SPB2.52.6,3.5250,1672.5100TQFP(LF Only),165FBGAMass Production
t
NOTES:250MHz could cover 200MHz speed option / 167MHz could cover 133MHz speed option
NtRAM (36Mbit) SRAM
PartOperating Access TimeSpeedI/O Production
NumberOrganizationModeVdd (V)tCD(ns)CYC (MHz)Voltage (V)PackageStatus
K7N323645M1Mx36SPB2.52.6,3.2,3.5,4.2250,200,167,1332.5100TQFP,165FBGAEOL in Q1`07
K7N321845M2Mx18SPB2.52.6,3.2,3.5,4.2250,200,167,1332.5100TQFP,165FBGAEOL in Q1`07
K7N323601M1Mx36SPB3.32.6,3.2,3.5,4.2250,200,167,1333.3,2.5100TQFP,165FBGAEOL in Q1`07
K7N321801M2Mx18SPB3.32.6,3.2,3.5,4.2250,200,167,1333.3,2.5100TQFP,165FBGAEOL in Q1`07
K7M323625M1Mx36FT3.37.51183.3,2.5100TQFPEOL in Q1`07
K7M321825M2Mx18FT3.37.51183.3,2.5100TQFPEOL in Q1`07
K7N32363SC1Mx36SPB3.3,2.52.6,3.5250,1673.3,2.5100TQFP(LF only),165FBGAQ3`06 (E/S)
K7N32183SC2Mx18SPB3.3,2.52.6,3.5250,1673.3,2.5100TQFP(LF only),165FBGAQ3`06 (E/S)
K7M323635C1Mx36FT3.3,2.57.51183.3,2.5100TQFP (LF only)Q3`06 (E/S)
K7M321835C2Mx18FT3.3,2.57.51183.3,2.5100TQFP (LF only)Q3`06 (E/S)
t
NOTES:Recommended speed options for SPB are 250MHz and 167MHz Recommended access speed option for SB is 7.5ns
NOTES:250MHz could cover 200MHz speed option / 167MHz could cover 133MHz speed option
NtRAM (18Mbit) SRAM
PartOperating Access TimeSpeedI/O Production
NumberOrganizationModeVdd (V)tCD(ns)CYC (MHz)Voltage (V)PackageStatus
K7N161831B1Mx18SPB3.3,2.52.6,3.5250,1673.3,2.5100TQFP(LF only from 2H`07),Mass Production
K7N163631B512Kx36SPB3.3,2.52.6,3.5250,1673.3,2.5100TQFP(LF only from 2H`07),Mass Production
K7M161835B1Mx18FT(SB)3.36.51333.3,2.5100TQFP (LF only from 2H`07) Mass Production
K7M163635B512Kx36FT(SB)3.36.51333.3,2.5100TQFP (LF only from 2H`07) Mass Production
t
165FBGA
165FBGA
NOTES:250MHz could cover 200MHz speed option / 167MHz could cover 133MHz speed option / 6.5ns could cover 7.5ns speed option
18a
SAMSUNG SEMICONDUCTOR,INC.
BR-06-ALL-001SEPTEMBER 2006
NtRAM (8Mbit) SRAM
PartOperating Access TimeSpeedI/O Production
NumberOrganizationModeVdd (V)tCD(ns)CYC (MHz)Voltage (V)PackageStatus
K7N803601B256Kx36SPB3.33.5,4.2167,1333.3,2.5100TQFP (LF only from 2H`07) Mass Production
K7N801801B512Kx18SPB3.33.5,4.2167,1333.3,2.5100TQFP (LF only from 2H`07) Mass Production
K7N803609B256Kx36SPB3.32.62503.3,2.5100TQFP (LF only from 2H`07) Mass Production
K7N801809B512Kx18SPB3.32.62503.3,2.5100TQFP (LF only from 2H`07) Mass Production
K7N803645B256Kx36SPB2.53.5,4.2167,1332.5100TQFP (LF only from 2H`07) Mass Production
K7N801845B512Kx18SPB2.53.5,4.2167,1332.5100TQFP (LF only from 2H`07) Mass Production
K7N803649B256Kx36SPB2.52.62502.5100TQFP (LF only from 2H`07) Mass Production
K7N801849B512Kx18SPB2.52.62502.5100TQFP (LF only from 2H`07) Mass Production
K7M801825B512Kx18FT3.36.5,7.5133,1173.3,2.5100TQFP (LF only from 2H`07) Mass Production
K7M803625B256Kx36FT3.36.5,7.5133,1173.3,2.5100TQFP (LF only from 2H`07) Mass Production
t
NtRAM (4Mbit) SRAM
PartOperating Access TimeSpeedI/O Production
NumberOrganizationModeVdd (V)tCD(ns)CYC (MHz)Voltage (V)PackageStatus
K7N403601B128Kx36SPB3.33.5,4.2167,1333.3,2.5100TQFP (LF only from 2H`07) Mass Production
K7N401801B256Kx18SPB3.33.5,4.2167,1333.3,2.5100TQFP (LF only from 2H`07) Mass Production
K7N403609B128Kx36SPB3.32.6,3.0250,2003.3,2.5100TQFP (LF only from 2H`07) Mass Production
K7N401809B256Kx18SPB3.32.6,3.0250,2003.3,2.5100TQFP (LF only from 2H`07) Mass Production
t
LATE-WRITE R-R (32Mbit) SRAM
PartOperating Access TimeSpeedI/O Production
NumberOrganizationModeVdd (V)tCD(ns)CYC (MHz)Voltage (V)PackageStatus
K7P321888M2Mx18SP1.81.7,2.0300,2501.5 (Max 1.8)119BGAEOL in Q2`07
K7P323688M1Mx36SP1.81.7,2.0300,2501.5 (Max 1.8)119BGAEOL in Q2`07
K7P321866M2Mx18SP2.51.6,2.0300,2501.5 (Max 1.8)119BGAEOL in Q2`07
K7P323666M1Mx36SP2.51.6,2.0300,2501.5 (Max 1.8)119BGAEOL in Q2`07
K7P321874C2Mx18SP1.8 / 2.5V1.6,2.0300,2501.5 (Max 1.8)119BGAQ3`06 (C/S)
K7P323674C1Mx36SP1.8 / 2.5V1.6,2.0300,2501.5 (Max 1.8)119BGAQ3`06 (C/S)
t
LATE-WRITE R-R (16Mbit) SRAM
PartOperating Access TimeSpeedI/O Production
NumberOrganizationModeVdd (V)tCD(ns)CYC (MHz)Voltage (V)PackageStatus
K7P161866A1Mx18SP2.522501.5 (Max 1.9)119BGAMass Production
K7P163666A512Kx36SP2.51.6300,2501.5 (Max.1.9)119BGAMass Production
t
SEPTEMBER 2006BR-06-ALL-001
SAMSUNG SEMICONDUCTOR,INC.
19a
LATE-WRITE R-R (8Mbit) SRAM
PartOperating Access TimeSpeedI/O Production
NumberOrganizationModeVdd (V)tCD(ns)CYC (MHz)Voltage (V)PackageStatus
K7P801811B512Kx18SP3.31.5,1.6,2.0333,300,2501.5 (Max.2.0)119BGAMass Production
K7P803611B256Kx36SP3.31.5,1.6,2.0333,300,2501.5 (Max.2.0)119BGAMass Production
K7P801866B512Kx18SP2.51.5,1.6,2.0333,300.251.5 (Max.2.0)119BGAMass Production
K7P803666B256Kx36SP2.51.5,1.6,2.0333,300,2501.5 (Max 2.0)119BGAMass Production
K7P801822B512Kx18SP3.31.5,1.6,2.0333,300,2502.5/3.3119BGAMass Production
K7P803622B256Kx36SP3.33.3,2.5,2.0250,200,1662.5/3.3119BGAMass Production
t
LATE-WRITE R-R & R-L (4Mbit) SRAM
PartOperating Access TimeSpeedI/O Production
NumberOrganizationModeVdd (V)tCD(ns)CYC (MHz)Voltage (V)PackageStatus
K7P401822B256Kx18SP3.32.5,2.7,3.0250,200,1672.5/3.3119BGAMass Production
K7P401823B256Kx18SP3.36.51672.5/3.3119BGAMass Production
K7P403622B128Kx36SP3.32.5,2.7,3.0250,200,1672.5/3.3119BGAMass Production
t
DDR (8Mbit) SRAM
PartAccess TimeCycle TimeI/OProduction
NumberOrganizationVdd (V)tCD (ns)(MHz)Voltage (V)PackageStatus
K7D803671B256Kx362.51.7/1.9/2.1333,330,2501.5(Max 2.0)153BGAMass Production
K7D801871B512Kx182.51.7/1.9/2.1333,330,2501.5(Max 2.0)153BGAMass Production
DDR (16Mbit) SRAM
PartAccess TimeCycle TimeI/OProduction
NumberOrganizationVdd (V)tCD (ns)(MHz)Voltage (V)PackageStatus
K7D161874B1Mx181.8~2.52.3330,3001.5~1.9153BGAMass Production
K7D163674B512Kx361.8~2.52.3330,3001.5~1.9153BGAMass Production
20a
SAMSUNG SEMICONDUCTOR,INC.
BR-06-ALL-001SEPTEMBER 2006
DDR (32Mbit) SRAM
PartAccess TimeCycle TimeI/OProduction
NumberOrganizationVdd (V)tCD (ns)(MHz)Voltage (V)PackageStatus
K7D321874A2Mx181.8~2.52.0400,375,3331.5~1.8153BGAEOL in Q4`06
K7D323674A1Mx361.8~2.52.0400,375,3331.5~1.8153BGAEOL in Q4`06
K7D321874C2Mx181.8~2.52.0400,375,3331.5~1.8153BGAQ3`06 (C/S)
K7D323674C1Mx361.8~2.52.0400,375,3331.5~1.8153BGAQ3`06 (C/S)
DDR CIO/SIO (18Mbit) SRAM
II
PartAccess TimeCycle TimeI/OProduction
NumberOrganizationVdd (V)tCD (ns)(MHz)Voltage (V)PackageStatusComments
K7I161882B1Mx181.80.45,0.45,0.45,0.50300,250,200,1671.5,1.8165FBGAMass ProductionCIO-2B
K7I161884B1Mx181.80.45,0.45,0.45,0.50300,250,200,1671.5,1.8165FBGAMass ProductionCIO-4B
K7J161882B1Mx181.80.45,0.45,0.45,0.50300,250,200,1671.5,1.8165FBGAMass ProductionSIO-2B
K7J163682B512Kx361.80.45,0.45,0.45,0.50300,250,200,1671.5,1.8165FBGAMass ProductionSIO-2B
K7I163682B512Kx361.80.45,0.45,0.45,0.50300,250,200,1671.5,1.8165FBGAMass ProductionCIO-2B
K7I163684B512Kx361.80.45,0.45,0.45,0.50300,250,200,1671.5,1.8165FBGAMass ProductionCIO-4B
NOTES:2B = Burst of 2CIO = Common I/O4B = Burst of 4 SIO = Separate I/O
DDR CIO/SIO (36Mbit) SRAM
II
PartAccess TimeCycle TimeI/OProduction
NumberOrganizationVdd (V)tCD (ns)(MHz)Voltage (V)PackageStatusComments
K7I321882M2Mx181.80.45,0.45,0.50250,200,1671.5,1.8165FBGAEOL in Q4`06CIO-2B
K7I321884M2Mx181.80.45,0.45,0.50250,200,1671.5,1.8165FBGAEOL in Q4`06CIO-4B
K7J321882M2Mx181.80.45,0.45,0.50250,200,1671.5,1.8165FBGAEOL in Q4`06SIO-2B
K7I323682M1Mx361.80.45,0.45,0.50250,200,1671.5,1.8165FBGAEOL in Q4`06CIO-2B
K7I323684M1Mx361.80.45,0.45,0.50250,200,1671.5,1.8165FBGAEOL in Q4`06CIO-4B
K7J323682M1Mx361.80.45,0.45,0.50250,200,1671.5,1.8165FBGAEOL in Q4`06SIO-2B
K7I321882C2Mx181.80.45330,300,2501.5,1.8165FBGAQ3`06 (C/S)CIO-2B
K7I321884C2Mx181.80.45330,300,2501.5,1.8165FBGAQ3`06 (C/S)CIO-4B
K7J321882C2Mx181.80.45330,300,2501.5,1.8165FBGAQ3`06 (C/S)SIO-2B
K7I323682C1Mx361.80.45330,300,2501.5,1.8165FBGAQ3`06 (C/S)CIO-2B
K7I323684C1Mx361.80.45330,300,2501.5,1.8165FBGAQ3`06 (C/S)CIO-4B
K7J323682C1Mx361.80.45330,300,2501.5,1.8165FBGAQ3`06 (C/S)SIO-2B
NOTES:2B = Burst of 24B = Burst of 4 SIO = Separate I/OCIO = Common I/O
C-die will support high-speed bins only 330,300,250MHz,which can cover slow-speed bins (200MHz,167MHz) using stable DLL circuit.
SEPTEMBER 2006BR-06-ALL-001
SAMSUNG SEMICONDUCTOR,INC.
21a
DDR CIO/SIO (72Mbit) SRAM
II
PartAccess TimeCycle TimeI/OProduction
NumberOrganizationVdd (V)tCD (ns)(MHz)Voltage (V)PackageStatusComments
K7I641882M4Mx181.80.45,0.45,0.45,0.50300,250,200,1671.5,1.8165FBGAMass ProductionCIO-2B
K7I641884M4Mx181.80.45,0.45,0.45,0.50300,250,200,1671.5,1.8165FBGAMass ProductionCIO-4B
K7J641882M4Mx181.80.45,0.45,0.45,0.50300,250,200,1671.5,1.8165FBGAMass ProductionSIO-2B
K7I643682M2Mx361.80.45,0.45,0.45,0.50300,250,200,1671.5,1.8165FBGAMass ProductionCIO-2B
K7I643684M2Mx361.80.45,0.45,0.45,0.50300,250,200,1671.5,1.8165FBGAMass ProductionCIO-4B
K7J643682M2Mx361.80.45,0.45,0.45,0.50300,250,200,1671.5,1.8165FBGAMass ProductionSIO-2B
NOTES:2B = Burst of 2CIO = Common I/O4B = Burst of 4 SIO = Separate I/O
DDR + CIO/SIO (18Mbit) SRAM
II
PartAccess TimeCycle TimeI/OProduction
NumberOrganizationVdd (V)tCD (ns)(MHz)Voltage (V)PackageStatusComments
K7K1618T2C1Mx181.80.45400,3331.5165FBGAQ3`06 (E/S)DDRII + CIO-2B
K7K1636T2C512Kx361.80.45400,3331.5165FBGAQ3`06 (E/S)DDRII + CIO-2B
NOTES:Offer 2-clock latency now;we can also support 2.5-clock latency with 500MHz speed based on demand.
DDR + CIO/SIO (36Mbit) SRAM
II
PartAccess TimeCycle TimeI/OProduction
NumberOrganizationVdd (V)tCD (ns)(MHz)Voltage (V)PackageStatusComments
K7K3218T2C2Mx181.80.45400,3331.5165FBGAQ3`06 (E/S)DDRII + CIO-2B
K7K3236T2C1Mx361.80.45400,3331.5165FBGAQ3`06 (E/S)DDRII + CIO-2B
NOTES:Offer 2-clock latency now;we can also support 2.5-clock latency with 500MHz speed based on demand.
QDR ,(18Mbit) SRAM
III
PartAccess TimeCycle TimeI/OProduction
NumberOrganizationVdd (V)tCD (ns)(MHz)Voltage (V)PackageStatusComments
K7R160982B2Mx91.80.45,0.45,0.50250,200,1671.5,1.8165FBGAMass ProductionQDR II - 2B
K7R161882B1Mx181.80.45,0.45,0.50250,200,1671.5,1.8165FBGAMass ProductionQDR II - 2B
K7R161884B1Mx181.80.45,0.45,0.45,0.50300,250,200,1671.5,1.8165FBGAMass ProductionQDR II - 4B
K7Q161862B1Mx181.8v / 2.5v2.51671.5,1.8165FBGAMass ProductionQDR I - 2B
K7Q161864B1Mx181.8v / 2.5v2.51671.5,1.8165FBGAMass ProductionQDR I - 4B
K7R163682B512Kx361.80.45,0.45,0.50250,200,1671.5,1.8165FBGAMass ProductionQDR II - 2B
K7R163684B512Kx361.80.45,0.45,0.45,0.50300,250,200,1671.5,1.8165FBGAMass ProductionQDR II - 4B
K7Q163662B512Kx361.8v / 2.5v2.51671.5,1.8165FBGAMass ProductionQDR I - 2B
K7Q163664B512Kx361.8v / 2.5v2.51671.5,1.8165FBGAMass ProductionQDR I - 4B
NOTES:2B = Burst of 24B = Burst of 4
22a
SAMSUNG SEMICONDUCTOR,INC.
BR-06-ALL-001SEPTEMBER 2006
QDR (36Mbit) SRAM
II
PartAccess TimeCycle TimeI/OProduction
NumberOrganizationVdd (V)tCD (ns)(MHz)Voltage (V)PackageStatusComments
K7R320982M4Mx91.80.45,0.50200,1671.5,1.8165FBGAEOL in Q4`06QDR II-2B
K7R321882M2Mx181.80.45,0.50200,1671.5,1.8165FBGAEOL in Q4`06QDR II-2B
K7R321884M2Mx181.80.45,0.45,0.50250,200,1671.5,1.8165FBGAEOL in Q4`06QDR II-4B
K7R323682M1Mx361.80.45,0.50200,1671.5,1.8165FBGAEOL in Q4`06QDR II-2B
K7R323684M1Mx361.80.45,0.45,0.50250,200,1671.5,1.8165FBGAEOL in Q4`06QDR II-4B
K7R320982C4Mx91.80.45300,250,2001.5,1.8165FBGAQ3`06 (C/S) QDR II-2B
K7R321882C2Mx181.80.45300,250,2001.5,1.8165FBGAQ3`06 (C/S) QDR II-2B
K7R321884C2Mx181.80.45333,300,2501.5,1.8165FBGAQ3`06 (C/S) QDR II-4B
K7R323682C1Mx361.80.45300,250,2001.5,1.8165FBGAQ3`06 (C/S) QDR II-2B
K7R323684C1Mx361.80.45333,300,2501.5,1.8165FBGAQ3`06 (C/S) QDR II-4B
NOTES:2B = Burst of 2 4B = Burst of 4
C-die will support high-speed bins only 300,250,200MHz,which can cover slow-speed bin (167MHz) using stable DLL circuit.
QDR (72Mbit) SRAM
II
PartAccess TimeCycle TimeI/OProduction
NumberOrganizationVdd (V)tCD (ns)(MHz)Voltage (V)PackageStatusComments
K7R640982M8Mx91.80.45,0.45,0.50250,200,1671.5,1.8165FBGAMass ProductionQDR II-2B
K7R641882M4Mx181.80.45,0.45,0.50250,200,1671.5,1.8165FBGAMass ProductionQDR II-2B
K7R641884M4Mx181.80.45,0.45,0.45,0.50300,250,200,1671.5,1.8165FBGAMass ProductionQDR II-4B
K7R643682M2Mx361.80.45,0.45,0.50250,200,1671.5,1.8165FBGAMass ProductionQDR II-2B
K7R643684M2Mx361.80.45,0.45,0.45,0.50300,250,200,1671.5,1.8165FBGAMass ProductionQDR II-4B
NOTES:2B = Burst of 2 4B = Burst of 4
The recommended speed bins are 250MHz,200MHz for 2B part,300MHz,250MHz for 4B part.
QDR (18Mbit) SRAM
II+
PartAccess TimeCycle TimeI/OProduction
NumberOrganizationVdd (V)tCD (ns)(MHz)Voltage (V)PackageStatusComments
K7S1618T4C1Mx181.80.45400,3331.5165FBGAQ3`06 (E/S)QDR II + 4B
K7S1636T4C512Kx361.80.45400,3331.5165FBGAQ3`06 (E/S)QDR II + 4B
NOTES:Offer 2-clock latency now;we can also support 2.5-clock latency with 500MHz speed based on demand.
QDR + (36Mbit) SRAM
II
PartAccess TimeCycle TimeI/OProduction
NumberOrganizationVdd (V)tCD (ns)(MHz)Voltage (V)PackageStatusComments
K7S3218T4C1Mx361.80.45400,3331.5165FBGAQ3`06 (E/S)QDR II + 4B
K7S3236T4C2Mx181.80.45400,3331.5165FBGAQ3`06 (E/S)QDR II + 4B
NOTES:Offer 2-clock latency now;we can also support 2.5-clock latency with 500MHz speed based on demand.
SEPTEMBER 2006BR-06-ALL-001
SAMSUNG SEMICONDUCTOR,INC.
23a
SYNCHRONOUS SRAM ORDERING INFORMATION
K 7X X X X X X X X - X X X X X X X
1 2 3 4 5 6 7 8 910 1112 131415161718
1.Memory (K)62:2.5V/1.8V,HSTL,Burst214~15.Speed
2.Sync SRAM:7
3.Small Classification
A:Sync Pipelined Burst
B:Sync Burst
C:Custom Product
D:Double Data Rate
I:Double Data Rate II,Common I/O
J:Double Data Rate,Separate I/O
K:Double Data II+,Common I/O95:1.0V,HSTL,All
L:Late Select
M:Sync Burst + NtRAM
N:Sync Pipelined Burst + NtRAM
P:Sync Pipe
Q:Quad Data Rate I
R:Quad Data Rate II
S:Quad Data Rate II+
4~5.Density
10:1M 80:8M
20:2M 16:18M
40:4M 32:36M
64:72M 44:144M
6~7.Organization
08:x8 09:x9
18:x18 32:x32
36:x36 44:x144
72:x72
8~9.Vcc,Interface,Mode
00:3.3V,LVTTL,2E1D WIDE
01:3.3V,LVTTL,2E2D WIDE
08:3.3V,LVTTL,2E2D Hi SPEED
09:3.3V,LVTTL,Hi SPEED
11:3.3V,HSTL,R-R
12:3.3V,HSTL,R-L
14:3.3V,HSTL,R-R Fixed ZQ
22:3.3V,LVTTL,R-R
23:3.3V,LVTTL,R-L
25:3.3V,LVTTL,SB-FT WIDE
30:1.8/2.5/3.3V,LVTTL,2E1D
31:1.8/2.5/3.3V,LVTTL,2E2D
35:1.8/2.5/3.3V,LVTTL,SB-FT
44:2.5V,LVTTL,2E1D
45:2.5V,LVTTL,2E2D
49:2.5V,LVTTL,Hi SPEED
52:2.5V,1.5/1.8V,HSTL,Burst2
54:2.5V,1.5/1.8V,HSTL,Burst4
64:2.5V/1.8V,HSTL,Burst4
66:2.5V,HSTL,R-R
70:2.5V,HSTL,4-1-1-1
71:2.5V,HSTL,3-1-1-1
73:1.5V,1.8V,HSTL,All
74:1.8V,2.5V,HSTL,All
80:1.8V,LVCMOS,2E1D
82:1.8V,HSTL,Burst2
84:1.8V,HSTL,Burst4
85:1.8V,LVCMOS,2E2D,Hi SPEED
88:1.8V,HSTL,R-R
91:1.5V,HSTL,All
T2:1.8V,2Clock Latency,Burst2
T4:1.8V,2Clock Latency,Burst4
U2:1.8V,2.5Clock Latency,Burst2
U4:1.8V,2.5Clock Latency,Burst4
10.Generation
M:1st Generation
A:2nd Generation
B:3rd Generation
C:4th Generation
D:5th Generation
Z:TEMPORARY CODE
11.“--”
12.Package
H:BGA,FCBGA,PBGA
G:BGA,FCBGA,FBGA (LF)
F:FBGA
E:FBGA (LF)
Q:(L)QPF
P:(L)QFP(LF)
C:CHIP BIZ
W:WAFER
13.Temp,Power
- COMMON (Temp,Power)
0:NONE,NONE (Containing of Error handling code)
A:Automotive,Normal
B:Commercial,Low Low
C:Commercial,Normal ComponentTRAY Y
E:Extended,Normal
I:Industrial,Normal
- WAFER,CHIP BIZ Level Division
0:NONE,NONE
- Sync Burst,Sync Burst + NtRAM
& < Mode is R-L >(Clock Accesss Time)
10:10ns(Sync Burst,Sync Burst + NtRAM)
38:3.8ns 43:4.3ns
48:4.8ns
50:5ns(Only Sync Pipe)
55:5.5ns 60:6ns
65:6.5ns 67:6.7ns
70:7ns 75:7.5ns
80:8ns 85:8.5ns
90:9ns
- Other Small Classification (Clock Cycle Time)
10:100MHz 11:117MHz
13:133MHz 14:138MHz
15:150MHz 16:166MHz
17:175MHz 18:183MHz
19:143MHz 20:200MHz
21:200MHz(2.0ns)22:225MHz
25:250MHz
26:250MHz(1.75ns) 27:275MHz
30:300MHz 33:333MHz
35:350MHz
36:366MHz(t-CYCLE) 37:375MHz
40:400MHz(t-CYCLE) 42:425MHz
45:450MHz
50:500MHz(except Sync Pipe)
6A:600MHz 6F:650Mhz(Only CSRAM)
7F:750MHz
16.Packing Type (16 digit)
- Common to all products,except of Mask ROM
- Divided into TAPE & REEL(In Mask ROM,divided into
TRAY,AMMO Packing Separately)
MCP:NAND/DRAM
DENSITYVCC (V)ORGANIZATIONPACKAGE INFORMATION
FLASHDRAMMemory CombinationFLASHDRAMFLASHDRAMPart No.SizeType
256Mb128MbND2561281.8V1.8Vx8x16K5D5629ACC-D090000010.5x13x1.4107FBGA
256Mb256MbND2562561.8V1.8Vx8x16K5D5657ACB-D090000010.5x13x1.4107FBGA
256Mb512MbND2565123.0V2.5Vx8x32K5D5613HCA-D09000010.5x13x1.2137FBGA
256Mb1GbNDD2565125123.0V2.5Vx8x16KAL005005M-DGYY00010.5X13X1.4137FBGA
128MbND256128 1.8V1.8Vx8x16K5D5629ACC-D090000 10.5x13x1.2107FBGA
256MbND256256 1.8V1.8Vx8x16K5D5657ACB-D090000 10.5x13x1.2107FBGA
512Mb256MbND5122561.8V1.8Vx8x16K5D1257ACB-D09000010.5x13x1.2107FBGA
512Mb512MbNDD5122562562.65V1.8Vx8x32KAL003004M-DG5500010.5x13x1.4137FBGA
1Gb256MbNND5125122562.65V1.8Vx8x16KAG00K007A-DGG500010.5x13x1.4107FBGA
1Gb512MbNNDD52.65V1.8Vx8x16KBE00F003A-D41100010.5x13x1.4107FBGA
1Gb1GbND1G5125121.8V(L)1.8Vx8x16KAL00X00VM-D1YY00010.5x13x1.4137FBGA
2Gb512MbNNDD1G1G2562562.65V(L)1.8Vx8x32KBE00S005M-D41100012x14x1.4137FBGA
2Gb1GbNNDD1G1G5125121.8V1.8Vx8x32KBE00500AM-D43700010.5x13x1.4137FBGA
2.65V1.8Vx8x16K5D5657DCB-D09000010.5x13x1.4107FBGA
3.3V3.3Vx8x32K5D5613VCM-D09000010.5x13x1.2137FBGA
2.65V1.8Vx8x16K5D5657DCB-D090000 10.5x13x1.2107FBGA
2.65V1.8Vx8x16K5D1257DCA-D09000010.5x13x1.4107FBGA
1.8V1.8Vx8x32K5D1258ACM-D09000011.5x13x1.2137FBGA
2.65V1.8Vx8x32K5D1258DCM-D09000010.5x13x1.4137FBGA
ND5125122.65V1.8Vx8x16K5D1212DCA-D09000010.5x13x1.2107FBGA
1.8V1.8Vx8x32K5D1213ACM-D09000010.5x13x1.2137FBGA
1.8V1.8Vx8x16(D)K5E1212ACB-D07500011.5x13x1.4202FBGA
1.8V1.8Vx8x16KBE00G003M-D42900010.5x13x1.4107FBGA
3.0V3.0Vx8x16KBE00J006A-D41100010.5x13x1.4107FBGA
2.65V1.8Vx8x32KBE00F005A-D41100010.5x13x1.4137FBGA
1.8V1.8Vx8x32KBE00G005A-D41100010.5x13x1.4137FBGA
NND5125125121.8V1.8Vx8x16KAG004003M-DDD500010.5x13x1.4107FBGA
2.65V1.8Vx8x16KAG00K003M-DGG500010.5x13x1.4107FBGA
1.8V1.8Vx8x32KAG00400SM-DDDY00010.5x13x1.4137FBGA
NDD1G2562561.8V(L)1.8Vx8x32KAL00T00KM-DG5500011.5x13x1.2137FBGA
3.0V2.65Vx8x32KAL00Z00LM-DA5500011.5x13x1.4137FBGA
ND1G5122.65V1.8Vx8x16K5D1G12DCM-D09000010.5x13x1.4107FBGA
2.65V1.8Vx8x32K5D1G13DCM-D09000010.5x13x1.4137FBGA
1.8V1.8Vx8x32K5D1G13ACD-D07500010.5x13x1.2137FBGA
1.8V(L)1.8Vx8x16K5D1G12ACM-D09000012.0x14x1.4107FBGA
1.8V(L)1.8Vx8x32K5E1G13ACM-D07500011.5x13x1.2137FBGA
3.3V(L)3.0Vx8x16KBE00U006M-D41100012x14x1.4107FBGA
1.8V(L)1.8Vx8x32KBE00H005M-D41100011.5x13x1.4137FBGA
1.8V(L)2.8Vx8x32KBE00H00BM-D41300011.5x13x1.4137FBGA
NND1G1G5122.65V1.8Vx8x16KAG006003M-DGG500012.0x14x1.4107FBGA
2.65V1.8Vx8x32KAG006003M-DGG500012.0x14x1.4137FBGA
1.8V(L)1.8Vx8x32(D)KAG001002M-DGGY00011.5x13x1.4137FBGA
2.65V1.8Vx8x16KAG006003A-D11500010.5x13x1.4107FBGA
2.65V1.8Vx8x32KAG00600SA-D11500010.5x13x1.4137FBGA
2.65V1.8Vx8x32KBE00S00AA-D43500010.5x13x1.4137FBGA
2.65V(L)3.0Vx8x32KBE00100GM-43100011.5x13x1.4137FBGA
NOTES:
1.N = NAND,D= DRAM memory combination indicates the type,density,and number of die stacks in the MCP.(Ex.NDD256256256 = 256Mb NAND + 256Mb DRAM + 256Mb DRAM).
2.When ordering Tape and Reel,please indicate by the letter "T" on the 3rd to last field in the part number.(Ex.K5D5629ACC-D090T00)
3.(D) Denotes DDR SDRAM packaged in MCP
4.(L) Denotes Large Block NAND packaged in MCP
SEPTEMBER 2006
BR-06-ALL-001
SAMSUNG SEMICONDUCTOR,INC.
25a
MCP:NOR/SRAM AND NOR/UtRAM
DENSITY Memory VCC (V)ORGANIZATIONPACKAGE INFORMATION
FLASHSRAMCombinationFLASHSRAMFLASHSRAMBOOTNOR OPR.Part No.SizeType
32Mb4MbRS32043.0V3.0Vx8/x16x8/x16BOTTOMAsync.No PageK5A3240CBM-F7550008x11x1.269FBGA
8MbRS32083.0V3.0Vx8/x16x8/x16TOPAsync.No PageK5A3281CTM-D7550008x11x1.269FBGA
8MbRS320832Mb3.0V3.0Vx8/x16x8/x16TOPAsync.No PageK5A3281CTM-D7550008x11x1.269FBGA
32MbRU643264Mb3.0V3.0Vx16x16TOPAsync.No PageK5J6332CTM-D7700008x11.6x1.469FBGA
RU12832128Mb32Mb3.0V3.0Vx16x16TOP/BOTAsync.Page ModeK5L2931CAM-D7700008x11.6x1.264FBGA
RU12864128Mb64Mb3.0V3.0Vx16x16TOP/BOTAsync Page ModeK5L2963CAM-D7700008x11.6x1.264FBGA
256Mb64MbRU256643.0V3.0Vx16x16TOP/BOTAsync Page ModeK5L5563CAM-D7700008x11.6x1.284FBGA
256Mb128MbRU2561281.8V2.6/1.8Vx16x16TOP/BOTAsync Page ModeK5L5527CAM-D7700008x11.6x1.284FBGA
3.0V3.0Vx8/x16x8/x16BOTTOMAsync.No PageK5A3281CBM-D7550008x11x1.269FBGA
3.0V3.0Vx8/x16x8/x16BOTTOMAsync.No PageK5A3281CBM-D7550008x11x1.269FBGA
3.0V3.0Vx16x16BOTTOMAsync.No PageK5J6332CBM-D7700008x11.6x1.469FBGA
1.8V1.8Vx16x16TOPSync MuxK5N2828ATM-SS660008.0x9.2x1.256FBGA
1.8V1.8Vx16x16TOPSyncK5L2864ATM-DF660008x12x1.4115FBGA
NOTES:
1.R= NOR,S= SRAM,U= UtRAM Memory combination indicates the type,density,and number of die stacks in the MCP.(Ex.RRU646432 = 64Mb NOR + 64Mb NOR + 32Mb UtRAM).
2.When ordering Tape and Reel,please indicate by the letter "T" on the 3rd to last field in the part number.(Ex.K5D5629ACC-D090T00)
3.All NOR Flash have demuxed Add/Data lines unless otherwise indicated in NOR OPR column.
4.All packages are pin compatible to Spansion's MCP pin out.
MCP:OneNAND/DRAM
™
DENSITYVCC (V)ORGANIZATIONPACKAGE INFORMATION
FLASHDRAMMemory CombinationFLASHDRAMFLASHDRAMPart No.SizeType
256Mb256MbOD12562563.3V3.3Vx16x32K5R5658VCM-DR750008x13x1.4188FBGA
512Mb512MbOD5125121.8V1.8Vx16x16(D)K5W1212ACM-DK7500011.5x13x1.4167FBGA
1Gb512MbOD1G5121.8V1.8Vx16x16K5R1G12ACM-DK9000011.5x13x1.4167FBGA
3Gb512MbOOOD1G1G1G5121.8V1.8Vx16x32KBR00Y00EA-D43400011.5x13x1.4167FBGA
3.3V1.8Vx16x32K5R5658LCM-DR750008x13x1.4188FBGA
1.8V1.8Vx16x32K5R1213ACA-DK7500011.5x13x1.0202FBGA
1.8V1.8Vx16x32K5R1G13ACA-DK7500011.5x13x1.0202FBGA
NOTES:
1.O= OneNAND,D= DRAM Memory combination indicates the type,density,and number of die stacks in the MCP.(Ex.OD1G512 = 1Gb OneNAND + 512Mb SDRAM).
2.When ordering Tape and Reel,please indicate by the letter "T" on the 3rd to last field in the part number.(Ex.K5R5658VCM-DR75T00)
3.(D) Denotes DDR SDRAM packaged in MCP.
4.All OneNAND Flash have demuxed Add/Data lines.
MCP:NOR/DRAM
DENSITY Memory VCC (V)ORGANIZATIONPACKAGE INFORMATION
FLASHSRAMCombinationFLASHSRAMFLASHSRAMBOOTNOR OPR.Part No.SizeType
64Mb256MbRD642563.0V2.6Vx16x32TOPAsync.No PageK5H6358ETA-D77500010x11x0.8145FBGA
64Mb512MbRD645123.0V1.8Vx16x32(D)TOPAsync.No PageK5Y6313LTM-D79000010.5x12x1.4151FBGA
512Mb256MbRRD5122561.8V1.8Vx16x16(D)TOPSync MLCKAS35000AM-S44Y00011x10x1.3133FBGA
512Mb512Mb1.8V1.8Vx16x16T+BSyncKAS280003M-DUU500011.5x13x1.4167FBGA
RRD256256512
NOTES:
1.R= NOR,D= DRAM Memory combination indicates the type,density,and number of die stacks in the MCP.(Ex.RDD32128128 = 32Mb NOR + 128Mb DRAM + 128Mb DRAM).
2.When ordering Tape and Reel,please indicate by the letter "T" on the 3rd to last field in the part number.(Ex.K5H6358ETA-D775T00)
3.All NOR Flash have demuxed Add/Data lines.
26a
SAMSUNG SEMICONDUCTOR,INC.
BR-06-ALL-001SEPTEMBER 2006
3.5”HARD DISK DRIVES (HDD)
SpinPoint V SeriesV80 Series PATA/2MB120GB5400 rpmSV1203N32ATA-1332MB8.9ms500K hrs
CapacityRPMsModel# of Heads# of DisksInterfaceBuffer SizeSeek TimeMTBF
160GB5400 rpmSV1604N42ATA-1332MB8.9ms500K hrs
V120 CE Series250GB5400 rpmHA250JC42ATA-1332MB8.9ms500K hrs
P40 Series PATA/2MB40GB7200 rpmSP0411N11ATA-1332MB10ms500K hrsSpinPoint P Series
40GB7200 rpmSP0401N11ATA-1332MB10ms500K hrs
SATA 1.5Gb/s40GB7200 rpmSP0411C11S-ATA 1.5G2MB10ms500K hrs
P80 Series PATA/2MB80GB7200 rpmSP0802N21ATA-1332MB8.9ms500K hrs
80GB7200 rpmSP0822N21ATA-1332MB8.9ms500K hrs
120GB7200 rpmSP1203N32ATA-1332MB8.9ms500K hrs
160GB7200 rpmSP1604N42ATA-1332MB8.9ms500K hrs
160GB7200 rpmSP1624N42ATA-1332MB8.9ms500K hrs
PATA/8MB80GB7200 rpmSP0812N21ATA-1338MB8.9ms500K hrs
80GB7200 rpmSP0842N21ATA-1338MB8.9ms500K hrs
120GB7200 rpmSP1213N32ATA-1338MB8.9ms500K hrs
160GB7200 rpmSP1614N42ATA-1338MB8.9ms500K hrs
160GB7200 rpmSP1644N42ATA-1338MB8.9ms500K hrs
SATA 1.5Gb/s80GB7200 rpmSP0812C21S-ATA 1.5G8MB8.9ms500K hrs
120GB7200 rpmSP1213C32S-ATA 1.5G8MB8.9ms500K hrs
160GB7200 rpmSP1614C42S-ATA 1.5G8MB8.9ms500K hrs
P80 SD Series SATA 3.0Gb/s40GB7200 rpmHD040GJ11S-ATA 3G8MB8.9ms500K hrs
80GB7200 rpmHD080HJ21S-ATA 3G8MB8.9ms500K hrs
120GB7200 rpmHD120IJ32S-ATA 3G8MB8.9ms500K hrs
160GB7200 rpmHD160JJ42S-ATA 3G8MB8.9ms500K hrs
P120 Series PATA/8MB200GB7200 rpmSP2014N42ATA-1338MB8.9ms500K hrs
250GB7200 rpmSP2514N42ATA-1338MB8.9ms500K hrs
SATA 3.0Gb/s200GB7200 rpmSP2004C42S-ATA 3G8MB8.9ms600K hrs
250GB7200 rpmSP2504C42S-ATA 3G8MB8.9ms600K hrs
T133 Series PATA/8MB300GB7200 rpmHD300LD63ATA-1338MB8.9ms600K hrsSpinPoint T Series
400GB7200 rpmHD400LD63ATA-1338MB8.9ms600K hrs
SATA 3.0Gb/s300GB7200 rpmHD300LJ63S-ATA 3G8MB8.9ms600K hrs
400GB7200 rpmHD400LJ63S-ATA 3G8MB8.9ms600K hrs
2.5“ HARD DISK DRIVES (HDD)
SpinPoint M SeriesM40 Series40GB5400 rpmMP0402H21ATA-68MB12ms330K hrs
CapacityRPMsModel# of Heads# of DisksInterfaceBuffer SizeSeek TimeMTBF
60GB5400 rpmMP0603H32ATA-68MB12ms330K hrs
80GB5400 rpmMP0804H42ATA-68MB12ms330K hrs
M40S Series SATA 1.5Gb/s40GB5400 rpmHM040HI21S-ATA8MB12ms330K hrs
60GB5400 rpmHM060II32S-ATA8MB12ms330K hrs
80GB5400 rpmHM080JI42S-ATA8MB12ms330K hrs
M60 Series40GB5400 rpmHM040HC21ATA-68MB12ms330K hrs
60GB5400 rpmHM060HC21ATA-68MB12ms330K hrs
80GB5400 rpmHM080IC32ATA-68MB12ms330K hrs
100GB5400 rpmHM100JC42ATA-68MB12ms330K hrs
120GB5400 rpmHM120JC42ATA-68MB12ms330K hrs
SATA 1.5Gb/s (3.0Gb/s)40GB5400 rpmHM041HI21S-ATA8MB12ms330K hrs
60GB5400 rpmHM060HI21S-ATA8MB12ms330K hrs
80GB5400 rpmHM080II32S-ATA8MB12ms330K hrs
100GB5400 rpmHM100JI42S-ATA8MB12ms330K hrs
120GB5400 rpmHM120JI42S-ATA8MB12ms330K hrs
SEPTEMBER 2006
BR-06-ALL-001
SAMSUNG SEMICONDUCTOR,INC.
27a
SN-M242D
Basic SpecsSeek Time (Average)Drive SpeedSupported DiscMedia Capacity
Horizontal/vertical drive mountingROM/R/RW:120ms Read CD-ROM Max.24X (3,600KB/sec)CDCD-DA;CD-ROM;CD-ROM CD650 MB CD-ROM (read only)
Solenoid tray loadingDVD-Single:130ms SpeedCD-RW Max.24X (3,600KB/sec)XA;CD-I;CD-Extra/CD-Plus;80mm CD (horizontal mount only)
Dimensions (WxHxD in mm):DVD-Dual:140ms DVD-Single Max.8X (10,800KB/sec)Video-CD;CD-R;CD-RW & 800/700/650/ CD-Recordable (read & write)
Interface:P-ATADVD-DL(±R):140msDVD-Dual Max.6 (10,800KB/sec)HSRW;Super Audio CD;US 700/650MB CD-Rewritable (read & write)
2MB buffer memoryDVD±R/RW:140ms & US+ RW 700/650MB High-Speed CD-Rewritable (read & write)
700/650MB Ultra & Ultra+ Speed CD-Rewritable
(read & write)
5/9/10/18 G DVD-Single/Dual (PTP,OTP) (read only)DVDDVD-ROM;DVD-Dual;DVD-DVD
3.9/4.7 G DVD-R (read only)Video;DVD-R;DVD+R;
4.7G DVD+R (read only)DVD+RW;DVD-RW
DVD±RW (read only)
80mm DVD
Write CD-R Max.24X (3,600KB/sec)
SpeedCD-RW Max.10X (1,500KB/sec)
US-RW Max.24X (3,600KB/sec)
US+ CD-RW Max.24X (3,600KB/sec)
SN-S082D
Basic SpecsSeek Time (Average)Drive SpeedSupported DiscMedia Capacity
Horizontal/vertical drive mountingCD-ROM:130msRead CD-ROM Max.24X (3,600KB/sec)CDCD-DA;CD-ROM;CD-ROM CD650MB CD-ROM (read only)
Solenoid tray loadingNS CD-RW:130ms SpeedCD-R Max.24X (3,600KB/sec)XA;CD-I/FMV;CD-Extra/CD-120mm/80mm CD
Dimensions (WxHxD in mm):HS/US CD-RW:130ms NS CD-RW Max.24xPlus;Video-CD;CD-R;CD-800/700/650MB CD-Recordable (read & write)
128 x 12.7 x 127DVD-Single:130ms HS/US CD-RW Max.24xRW & HSRW;US & US + 700/650MB CD-Rewritable (read & write)
Interface:P-ATADVD-Dual:150ms DVD-Single Max.8xRW;Super Audio CD 700/650MB High-Speed CD-Rewritable (read & write)
2MB buffer memoryDVD-R/+R:150msDVD-Double Max.6x700/650MB Ultra & Ultra+ Speed CD-Rewritable
DVD-RW/+RW:150ms DVD-R/+R Max.8x(read & write)
DVD-RW/+RW Max.6x
DVD-RAM 5x
CD-R Max.24X (3,600KB/sec)Write DVD5/9/10/18 G DVD-Single/Dual (PTP,OTP) (read only)
NS CD-RW 4X (600KB/sec)Speed3.9/4.7 G DVD-R (read only)
HS CD-RW Max.10X (1,500KB/sec)4.7G DVD+R (read only)
US/US+ RW Max.24XDVD±RW (read only)
DVD+R Max.8X80mm DVD
DVD+RW Max.8X (8x media) Max.
4x (4x media)
DVD+R DL Max.6x
DVD-R Max.8X
DVD-R DL Max,6x
DVD-RW Max 6X (6x media),Max.
4x (4x media)
DVDDVD-ROM;DVD-Video;
DVD-R;DVD+R;DVD±RW;
DVD+R DL;DVD-R DL;
support DVD-R/RW CPRM
(read/write);DVD-RAM
(read only)
28a
SAMSUNG SEMICONDUCTOR,INC.
BR-06-ALL-001SEPTEMBER 2006
SH-S182D
Basic SpecsSeek Time (Average)Drive SpeedSupported DiscMedia Capacity
Horizontal/vertical drive mountingCD-ROM/R/RW:110ms Read CD-DA;CD-ROM;CD-ROM CD120mm CD-ROM (read only)DVD-ROM Max.16X (21,600KB/sec)CD
Solenoid tray loadingDVD-Single:130ms SpeedXA;CD-I;CD-Extra/CD-Plus;80mm CD (horizontal mount only)DVD-RAM Max.12X (16200KB/sec)
Dimensions (WxHxD in mm):DVD-Dual:140ms Video-CD;CD-R;CD-RW 800/700/650MB CD-Recordable (read & write)DVD-Dual
148.2 x 42 x 170DVD±R/RW:140ms700/650MB Low/High/Ultra-Speed CD RewritableDVD±RW Max.8X (10,800KB/sec)
Interface:P-ATA(read & write)DVD±R Max.12X (16,200KB/sec)
2MB buffer memoryDVD±R DL Max.8X (10,800KB/sec)
Write DVD-RAM Max.12X (16,200 KB/sec)
SpeedDVD+R Max.18X (24,300KB/sec)
CD-ROM Max.48X (7,200 KB/sec)
CD-R/CD-RW Max.40X (6,000 KB/sec)
DVDDVD-ROM;DVD-Video;DVD5/9/10/18G DVD-Single/Dual (PTP,OTP) (read only)
DVD-R Max.18X (24,300KB/sec)
DVD±RW Max.8X (10,800KB/sec),
6X (8,100KB/sec)
DVD±R Double L Max.8X (10,800/sec)
CD-R Max.48X (7,200KB/sec)
HS-RW Max.10X (1,500KB/sec)
US-RW Max.32X (4,800KB/sec)
DVD-R;DVD+R;DVD_R DL;3.9/4.7G DVD-ROM (read only)
DVD±RW;DVD-RAM DVD±RW,DVD±R,DVD±R DL (read & write)
80mm DVD (horizontal mount only)
SH-S182M
Basic SpecsSeek Time (Average)Drive SpeedSupported DiscMedia Capacity
Horizontal/vertical drive mountingCD-ROM/R/RW:110ms Read CD-DA;CD-ROM;CD-ROM CD120mm CD-ROM (read only)DVD-ROM Max.16X (21,600KB/sec)CD
Solenoid tray loadingDVD-Single:130ms SpeedXA;CD-I;CD-Extra/CD-Plus;80mm CD (horizontal mount only)DVD-RAM Max.12X (16200KB/sec)
Dimensions (WxHxD in mm):DVD-Dual:140ms Video-CD;CD-R;CD-RW 800/700/650MB CD-Recordable (read & write)DVD-Dual
148.2 x 42 x 170DVD±R/RW:140ms 700/650MB Low/High/Ultra-Speed CD RewritableDVD±RW Max.8X (10,800KB/sec)
Interface:P-ATA(read & write)DVD±R Max.12X (16,200KB/sec)
(Light Scribe)DVD±R DL Max.8X (10,800KB/sec)
2MB buffer memoryCD-ROM Max.48X (7,200 KB/sec)
WriteDVD-RAM Max.12X (16,200 KB/sec)
SpeedDVD+R Max.18X (24,300KB/sec)
CD-R/CD-RW Max.40X (6,000 KB/sec)
DVDDVD-ROM;DVD-Video;DVD5/9/10/18G DVD-Single/Dual (PTP,OTP) (read only)
DVD-R Max.18X (24,300KB/sec)
DVD±RW Max.8X (10,800KB/sec),
6X (8,100KB/sec)
DVD±R Double L Max.8X (10,800/sec)
CD-R Max.48X (7,200KB/sec)
HS-RW Max.10X (1,500KB/sec)
US-RW Max.32X (4,800KB/sec)
DVD-R;DVD+R;DVD_R DL;3.9/4.7G DVD-ROM (read only)
DVD±RW;DVD-RAM DVD±RW,DVD±R,DVD±R DL (read & write)
80mm DVD (horizontal mount only)
SEPTEMBER 2006
BR-06-ALL-001
SAMSUNG SEMICONDUCTOR,INC.
29a
ASICs
ASIC FOUNDRY TECHNOLOGY LIBRARY
TechnologyProcess Core VoltageI/O VoltageCell Size
G/HS/LP/RF/MSL0990nm1.0~1.2V1.8~3.3VSRAM :0.79~1.25 um2
G/HS/LP/RFL0665nm (Common Platform)1.0~1.2V1.8V~2.5VSRAM :0.499~0.676 um2
Logic L130.13um1.2~1.5V2.5~3.3VSRAM :1.85~2.43 um2
(Embedded DRAM)LD130.13um1.0~1.5V2.5~3.3VDRAM :0.34 um2
MDLLD180.18um1.8V3.3V/5VDRAM :0.45 um2
(Embedded Flash)LFS130.13um1.0~1.5V2.5~3.3VFlash :<0.28 um2
MFLLF180.18um1.8V3.3V/5VFlash :0.63 um2
(Embedded Flash)LF130.13um1.0~1.5V2.5~3.3VFlash :0.45 um2
BiCMOSBH35150.35um15V3.3V/5V
BH35050.35um5V3.3V/5V
BH18050.18um1.8V3.3V/5V
BH13050.13um1.2V~1.5V2.5/3.3V
BS3550RF (SiGe BiCMOS)0.35um3.3V3.3V/5VfT :50GHz
BS18500.18um1.8V2.5~3.3VfT :120GHz
BS132000.13um1.2V~1.5V2.5~3.3VfT :200GHz
ASIC TECHNOLOGY LIBRARY
Technology LibraryCore VoltageCore VoltageI/O Receive I/O DriveMaximum
NameName(s)Description(Nominal) (V)Tolerance (V)Voltage (V)Voltage (V)Vgs (V)
LF13MFL1500.13µm Merged Flash Memory with Logic1.2-0.12.5/3.3/5.0T2.5/3.33.3
LD13MDL1500.13µm Merged DRAM with Logic1.2-0.12.5/3.3/5.0T2.5/3.33.3
L13 STDH1500.13µm High-Speed Standard Cell with L13HS1.2-0.12.5/3.3/5.0T2.5/3.33.3
STDH150HD0.13um High-Density Standard Cell with L13HS1.2-0.12.5/3.3/5.0T2.5/3.33.3
STD1500.13µm High-Density Standard Cell with L13G 1.2-0.12.5/3.3/5.0T2.5/3.33.3
STD150HS0.13um High-Speed Standard Cell with L13G1.2-0.12.5/3.3/5.0T2.5/3.33.3
STD150HVT”0.13um Low-Leakage and High-Density Standard Cell
STD150OD”0.13um High-Speed Standard Cell with L13G
STD150HVTOD"0.13um Low-Leakage and High-Density Standard Cell
STDL150”0.13µm Low Leakage and High-Density Standard Cell
LF18MFL1300.18µm Merged Flash Memory with Logic1.8-0.151.8/2.5/3.3/5.0T1.8/2.5/3.33.3
LD18MDL1300.18µm Merged DRAM with Logic1.8-0.151.8/2.5/3.3/5.0T1.8/2.5/3.33.3
L18STD1300.18µm High-Density Standard Cell with L181.8-0.151.8/2.5/3.3/5.0T1.8/2.5/3.33.3
STD1310.18µm High-Speed Standard Cell with L181.8-0.151.8/2.5/3.3/5.0T1.8/2.5/3.33.3
STDL130”0.18µm Low Leakage and High-Density
STDL131”0.18um Low Leakage and High Performance
L25STD1100.25µm High-Density Standard Cell2.5-0.22.5/3.3/5.02.5/3.33.3
STDM1100.25µm Low Voltage High-Density Standard Cell1.8-0.152.5/3.3/5.02.5/3.33.3
STD1110.25µm High Performance Standard Cell2.5-0.22.5/3.3/5.02.5/3.33.3
MFL900.35µm Merged Flash Memory with Logic3.3-0.33.3/5.03.33.3LF35
STDH900.35µm High-Density Standard Cell with dual gate oxide3.3-0.33.3/5.03.3/5.05L35H
STD900.35µm High-Density Standard Cell3.3-0.33.3/5.03.33.3L35
with L13G High-VTH option“1.2-0.12.5/3.3/5.0T2.5/3.33.3
Over-Drive option“1.5-0.12.5/3.3/5.0T2.5/3.33.3
with L13G High-VTH and Over-Drive option"1.5-0.12.5/3.3/5.0T2.5/3.33.3
with L13LP“1.5-0.11.5/2.5/3.3/5.0T1.5/2.5/3.33.3
Standard Cell with L18LP“1.8-0.151.8/2.5/3.3/5.0T1.8/2.5/3.33.3
Standard Cell with L18LP“1.8-0.151.8/2.5/3.3/5.0T1.8/2.5/3.33.3
SEPTEMBER 2006BR-06-ALL-002
SAMSUNG SEMICONDUCTOR,INC.
3b
ASIC CORE LIBRARY
I/O LIBRARY
0.35µm 0.25µm0.18µm----0.13µm---
STD90 /STDM90STD110STD130STD150HSSTD150GSTD150LP
AAAAAAI/OCMOS,TTL I/O Buffers
AAAAAAI/O-IP3/5V tolerant
AAAAAASlew control
NAGGGGGPVT impedance control
ANANANANANATrue 5V I/O
NANANANANANAAGP4X
AAARARARARATA5
NANAARGARARATA6
ARARARARARARCardBus/PCI
AARARGGGGTL
GGARGGGHSTL
ANANANANANAIEEE1284
GARARARARARLVDS
AAAAAAOSC (KHz)
AAAAAAOSC (MHz)
AAARARARARPCI
AR ARARGGGPECL
AR AARARARARSSTL
DNANANANANAUltra2- SCSI (LVD)
AAAAAAUSB1.1
NOTES:* I/O review sheet (I/O interface for I/O-IP review sheet in NCTS (New Cell Traveler Sheet)
1A = Available6E = Under development (design and layout will be finished by the date)
2AR = Available upon Request7F = Scheduled (design and layout will be finished by the date)
3B = Under test (test will be finished by the date)8G = Will be developed based upon customer's request (SEC has more than 90% confidence for silicon result)
4C = In fabrication line (fab.out date)9TBD = To Be Determined
5D = GDS is available but silicon has not been verified10NA = Not Available
(SEC has more than 90% confidence in silicon result)* For further information,please contact:jhprk@
ASIC LEGACY FOUNDRY
ProductTechnologyFeatureProductionComments
CMOS Legacy2.0µm ~ 0.5µmS/D Poly,D/TLMFoundry5V with Mixed Signal (Optional)
Hi Voltage CMOS0.8µm ~ 0.13µmS/D Poly,D/TLMFoundry12,13V,15V,20V,30V,45V
EEPROM0.8µm ~ 0.35µmD Poly,D/TLMFoundry
CIS0.8µm ~ 0.5µm S/D Poly,D/TLMFoundryB&W,RGB,Full Color
ASIC DIGITAL CORES
DSP Cores CPU Cores Interface Cores BUS Architecture
•SSP1820 (OAK Compatible 16-Bit DSP Core)•SAM17(8)X (ARM7TDMI Compatible RISC Processor) USB1.1 Function Controller•AMBA2.0 (Micro Pack v2.0)
•TeakLite (TeakLite Compatible 16-Bit DSP Core)•SAM40X (ARM9TDMI Compatible RISC Processor) USB2.0 Function Controller•AMBA3.0 (ADK)
•Teak (Teak Compatible 16-Bit DSP Core) •SAM42X (ARM920T Compatible RISC Processor)USB1.1 Host Controller
•SAM44X (ARM940T Compatible RISC Processor) USB FS OTG Controller
USB2.0 Phy (L18)
USB2.0 Phy (L13)
IEEE1394a Link•ARM920T (ARM920T Compatible RISC Processor)
IEE1394a DV Link•ARM940T (ARM940T Compatible RISC Processor)
IEEE1394a Phy (L18)•ARM926EJS (ARM926EJ-S Compatible RISC Processor)
PCI Bridge•ARM1020E (ARM1020E Compatible RISC Processor)
PCI Device•ETM9 (Embedded Trace Macrocell for ARM9 core)
PCI2AHB•ETM7 (Embedded Trace Macrocell for ARM7 core)
Ethernet MAC (10/100)•ARM946E-S (ARM946E-S Compatible RISC Processor)
•ARM7TDMI-S (ARM7TDMI-S Compatible RISC Processor)
•ARM1136JF-S (ARM1136JF-S Compatible RISC Processor)
4b
SAMSUNG SEMICONDUCTOR,INC.
BR-06-ALL-002SEPTEMBER 2006
ASIC MIXED-SIGNAL IPs
High Resolution & Performance for Low-Voltage Mixed-SignalFull Customer Support
Mixed-Signal Cores (based on proven silicon)Cores for SoCSpecific Cores
•ADC:1.8V 8-bit 250MHz ADC•ADC:1.2V 8-bit 30MHz ADC•Support for various kinds of MSC architectures
1.8V 10-bit 150MHz ADC1.2V 10-bit 100MHz ADC
3.3V 14-bit 80MHz ADC
•DAC:3.3V 8-bit 300MHz DAC• DAC:1.2V 8-bit 2MHz DAC•The shortest TAT for customer-specific cores
3.3V 12-bit 80MHz ADC
3.3V 14-bit 40MHz DAC
1.2V 8-bit 80MHz DAC
•PLL:3.3V 800MHz FSPLL•PLL:1.2V 100M/300M/500M FSPLL
1.8V 200MHz Pixel Clock Gen
1.2V 230MHz Dithered PLL
•CODEC:3.3V 16-bit Audio DAC•CODEC:2.5V 16-bit Audio DAC
3.3V 16-bit Audio CODEC
ASIC LINE-UP TABLE FOR COMPILED MEMORY
STD90 STD110MDL120STD130STDL130STDH150STD150STDL1
L35L25 LD25L18L18LL13HSL13GL13LP
HDHDLPHDHDLPHDLPHDLPHDLPHDLP
AAAAAAAAANAAAARASPSRAM
AANAAAAAAANAAAARASPSRAMBW
NANANANAANAANAANAAAARASPSRAMR
AAAAAAAAANAAAARADPSRAM
NANANANAAAAAANAAAARADPSRAMBW
NANANANANANANANAANAAAARADPSRAMR
AAANANANANANANANANANAARNASPARAM
NANANANAANAANANANANANAARNASPARAMBW
NAANANAANANANANANANANANANAARFRAM
NANANANANANANANAANAANAANASRFRAM
AAAAANAANANANANANANANADROM @ Active
AAAAANAANANANANANANANAMROM @ Met-2
NANANANANANANANAANAANAANAVROM @ Via-1
NANANANAANAANAARNAARNAARNAFIFO
NANANANAANAANAARNAANAARNACAM
NANANANAANANANAARNAANAARNAHCSPSRAM
NANANANAANANANAARNAANAARNAHCVROM @ Via-1
NOTES:A = Available AR = Available Upon Request E = Under Development (design and layout will be finished by the date) NA = Not Available
SEPTEMBER 2006BR-06-ALL-002
SAMSUNG SEMICONDUCTOR,INC.
5b
ASIC ORDERING INFORMATION
S 6 X X X X X X X X - X X X X
1 2 3 4 5 6 7 8 910 1112 131415
1.System LSI (S)12~14.Package Type(14) Packing
2.Large Classification:ASIC (6)
3.Small Classification
- In Case of PKG
- In Case of TAB / COF
(12)(13) Film Type(12) Package Type
B :BUMP BIZA :SDIP
E :LQFPC :CHIP BIZ 50~99 COF
K :TRJ :ELP
Q :QFPN :COB
T :TQFPS :SOP
X :ETQFPW :WAFER
1st Version X
15.Custom
B :STN (Graphic)A :STN (Character)
D :TFT (Mobile)C :TFT (Large)
E :OELDF :TFT (Midsmall)
T :TCONP :PDI (DUAL)
(13) Reserved
4~7.
00~49 TAB
(14) Revision
V :Process Vehicle
0 :No Grinding 1 :250°æ10um
5 :200±10um
8 :300±10um (CHIP BIZ) 9 :280°æ10um
2 :Special Handling 21 :Special Handling 1
A :Test Condition 13 :Special Handling 3
C :Customer Option 2B :Customer Option 1
E :Customer Option 4D :Customer Option 3
H :Customer Option 7G :Customer Option 6
K :Customer Option 9J :Customer Option 8
A :300±10um
C :300±10um (Wafer)
G :375±10um (CHIP BIZ) J :425±10um
K :400±10um L :450±10um
M :470±10um (Wafer) N :470±10um
R :350±10um (Wafer) U :610±10um
V :500±10um (CHIP BIZ)
W :425±10um (Wafer)
X :425±10um (CHIP BIZ)
Y :470±10um (CHIP BIZ)
1 :NO BUMP0 :BUMP
Serial No
8.Version
- PKG Option
0 :none
X*1st Version
A~Z
9~10.Mask Option
- STN (Character)
00~99 :Font
- STN (Graphic)
Mask Option
- TFT Device
Mask Option
11." - "
L :Customer Option 10 M :Customer Option 11
N :Customer Option 12 P :Customer Option 13
- WAFER
Z :No Grinding (CHIP / Wafer)
6b
SAMSUNG SEMICONDUCTOR,INC.
BR-06-ALL-002SEPTEMBER 2006
STN CHARACTER LCD DRIVER ICs
Part NumberSegmentCommonROM (Ch.)CGRAM (Ch.)Interface (Bit)VDD (V)Vlcd (Max.V)(Times)Package
S6A003180810160 (254)80 (2)8-Apr2.4~5.56Au bump chip
S6A0032801610160 (254)80 (2)8-Apr2.4~5.56Au bump chip
S6A0065402.7~5.513Bare die/64QFP
S6A0069401610080 (236)512 (8)8-Apr2.7~5.513Bare die/80QFP
S6A007080168320 (224)512 (8)8-Apr2.7~5.510Bare die/Au bump chip
S6A007160328400 (240)512 (8)8-Apr2.4~5.5132Au bump chip/TCP
S6A007240169600 (240)160 (4)8-Apr2.7~5.511Au bump chip
S6A007360349600 (240)512 (8)4-Jan2.7~5.5132~3Bare die
S6A007480349600 (240)512 (8)4-Jan2.7~5.5132~3Bare die
S6A0075100349600 (240)512 (8)4-Jan2.7~5.5132~3Bare die
S6A0078120349600 (240)512 (8)4-Jan2.7~5.5132~3Bare die/TCP
S6A0079120349600 (240)512 (8)4-Jan2.7~5.5132~3Bare die
S6A0090642610240 (256)160 (4)4-Jan2.4~5.5112~3Au bump chip/TCP
S6A0093802610240 (256)320 (8)4-Jan2.4~5.564Au bump chip/TCP
S6A0094*803421760 (544)80 (6)4-Jan2.2~3.674Au bump chip
S6A0067802.7~5.510Bare die/100QFP
S6A206860168320 (224)512 (8)8-Apr2.7~5.510Bare die/
CG DC/DC Convert
Bare die is equivalent term with bare chip,pellet or die.NOTES:Devices marked with an asterisk (*) are under development.
COF (Chip On Film) is available in case of TCP.TCP (Tape Carrier Package)
STN GRAPHIC LCD DRIVER ICs
Part NumberSegmentCommonDDRAM (Bits)Interface (Bit)VDD (V)Vlcd (Max.V)(Times)Package
S6B01076414.5~5.517
S6B0086V804-Jan2.7~5.528
S6B07151003385808-Jan2.4~5.5152~4Au bump chip/TCP
S6B0717 1005565008-Jan2.4~5.5152~5Au bump chip/TCP
S6B07181048192568-Jan2.4~3.6153~6Au bump chip/TCP
S6B0719160105168008-Jan2.4~3.6153~6Au bump chip/TCP
S6B07231326585808-Jan2.4~5.5152~5TCP
S6B07241326585808-Jan2.4~5.5152~5Au bump chip
S6B07251046568608-Jan2.4~3.6152~5Au bump chip
S6B0728132128168968-Jan2.4~3.6153~7Au bump chip/TCP
S6B0741128129330248-Jan1.8~3.3153~6TCP
S6B07551286583208-Jan1.8~3.3153~5Au bump chip/TCP
S6B0756966562408-Jan1.8~3.3122~4Au bump chip
S6B075912881103688-Jan1.8~3.3153~6Au bump chip/TCP
S6B24009665124808-Jan1.8~3.3123~5Au bump chip
S6B07941601608-Apr2.4~5.532Au bump chip/TCP
S6B07962402408-Apr2.4~5.532Au bump chip/TCP
S6B17131326585808-Jan2.4~5.5152~5Au bump chip/TCP
DC/DC Convert
NOTES:Bare die is equivalent term with bare chip,pellet or die.
TCP (Tape Carrier Package)
COF (Chip On Film) is available in case of TCP.
SEPTEMBER 2006BR-06-ALL-002
SAMSUNG SEMICONDUCTOR,INC.
7b
STN GRAPHIC COLOR LCD DRIVER ICs
Device NameSegmentCommonColor DepthDDRAM (Bits)VDD (V)Vlcd (Max.V)(Times)Package
S6B33A1132160256/4k266,1121.8~3.620VAu bump chip
S6B33A2128129256/4k196,6081.8~3.320VAu bump chip
S6B33B0144177256/4k/65k405,5041.8~3.320VAu bump chip
S6B3300*10480256/4k99,8401.8~3.315VAu bump chip
DC/DC Convert
NOTES:Devices marked with an asterisk (*) are under development.
TCP (Tape Carrier Package)
Bare die is equivalent term with bare chip,pellet or die.
COF (Chip On Film) is available in case of TCP.
STN GRAPHIC LCD DRIVER ICs
PartBit Map AreaVlcd
NumberRGBGate Color Depth(RAM)VCl(V)(Max.V)Package
S6D0110132176260K132*18*1762.5~3.325V MaxAu bumped chip
S6D0114132176260K132*18*1762.5~3.325V MaxAu bumped chip
S6D0117132132260K132*132*182.5~3.325V MaxAu bumped chip
S6D0118176240260K176*18*2402.5~3.325V MaxAu bumped chip
S6D0123132176260K132*18*1762.5~3.325V MaxAu bumped chip
S6D0129240320260K240*18*3202.5~3.330V MaxAu bumped chip
NOTES:TCP (Tape Carrier Package)
COF (Chip On Film) is available in case of TCP
8b
SAMSUNG SEMICONDUCTOR,INC.
BR-06-ALL-002SEPTEMBER 2006
LCD DRIVER IC ORDERING INFORMATION
S 6 X X X X X X X X - X X X X
1 2 3 4 5 6 7 8 910 1112 131415
1.System LSI (S)11." - "
2.Large Classification:LDI (6)12~14.Package Type
3.Small Classification
- In Case of PKG
(14) Packing
- In Case of TAB / COF
(12)(13) Film Type
00~49TAB
B :BUMP BIZA :SDIP
E :LQFPC :CHIP BIZ
K :TRJ :ELP
Q :QFPN :COB
T :TQFPS :SOP
X :ETQFPW :WAFER
(14) Revision
COF50~99
A :STN (Character) B :STN (Graphic)
C :TFT (Large) D :TFT (Mobile)
F :TFT (Midsmall) E :OELD
P :PDI (DUAL) T :TCON
V :Process Vehicle
4~7.
(13) Reserved
1st VersionX
15.Back Lap
0 :No Grinding 1 :250±10um
5 :200±10um
8 :300±10um (CHIP BIZ) 9 :280±10um
2 :Special Handling 21 :Special Handling 1
A :Test Condition 13 :Special Handling 3
C :Customer Option 2B :Customer Option 1
E :Customer Option 4D :Customer Option 3
H :Customer Option 7G :Customer Option 6
K :Customer Option 9J :Customer Option 8
M :Customer Option 11L :Customer Option 10
P :Customer Option 13N :Customer Option 12
A :300±10um
C :300±10um (Wafer)
G :375±10um (CHIP BIZ) J :425±10um
K :400±10um L :450±10um
M :470±10um (Wafer) N :470±10um
R :350±10um (Wafer) U :610±10um
V :500±10um (CHIP BIZ)
W :425±10um (Wafer)
X :425±10um (CHIP BIZ)
Y :470±10um (CHIP BIZ)
1 :NO BUMP0 :BUMP
Serial No.
8.Version
- PKG Option
0 :none
X*1st Version
A~Z
9~10.Mask Option
- STN (Character)
- WAFER
00~99:Font
- STN (Graphic)
Mask Option
- TFT Device
Mask Option
Z :No Grinding (CHIP / Wafer)
SEPTEMBER 2006BR-06-ALL-002
SAMSUNG SEMICONDUCTOR,INC.
9b
MOBILE APPLICATION PROCESSORS
Part MaxMemory IntefaceData BusFeaturesI/OInterruptTimer/Serial
NumberCPU(Cache)Freq(bit)Pins(Ext)CounterInterfaceDMAPKG
S3C44B0ARM7TDMI66MHz8,16,32Mono/Color/Gray STN Cont.,7131(8)WDT/16TCx5UARTx24-ch160LQFPROM/SRAM
S3C2412ARM926EJ-S8,16,32TFT/STN(65K) LCD Cont.,11555(24)WDT/16TCx4UARTx34-ch272FBGA200/266MHzROM/SRAM
(8KB)10 ADC x 8Internal 16TCIIC/IIS160FBGASDRAM
(8KB-I,8KB-D)NAND Boot,10 ADCx8(TSP),Internal 16TCSPIx2/IIC/IISSDRAM/mSDRAM
ARM926EJ-STFT/STN LCD Cont.,ATA Interfaces,WDT/16TCx4UARTx3266MHzROM/SRAMS3C24138,16,3212955(24)4-ch289FBGA
(8KB-I,8KB-D)NAND Boot,10 ADCx8(TSP),Internal 16TCSPIx2/IIC/IISSDRAM/mSDRAM
ARM920TTFT/STN LCD Controller,WDT/16TCx4UARTx3ROM/SRAMS3C2440300MHz8,16,3213059(24)4-ch289FBGA
(16KB-I,16KB-D)NAND Boot,10 ADCx8(TSP),Internal 16TCSPIx2/IIC/IISSDRAM/mSDRAM400MHz
USB hostx2,USB device,NAND
SD(SDIO)/MMC
USB hostx2,USB device,DDR/mDDR
SD(SDIO)/MMC,Camera I/FNAND/oneNAND
USB hostx2,USB device,NAND
SD(SDIO)/MMC,Camera I/F
AC97
TFT/STN LCD Controller,SC32442ARM920T300MHzStacked with8,16,3213059(24)WDT/16TCx4UARTx34-ch332FBGA
NAND Boot,10 ADCx8(TSP),(16KB-I,16KB-D)400MHz32/64MB mSDRAM,Internal 16TCSPIx2/IIC/IIS
USB hostx2,USB device,64/128MB NAND
SD(SDIO)/MMC,Camera I/F
AC97
TFT/STN LCD Controller,ROM/SRAM8,16,32S3C24A0ARM926EJ-S 266MHz3260(19)WDT/16TCx4UARTx2(IrDA)4-ch337FBGA
AC97,Camera I/F,SDRAM/mSDRAM(16KB-I,16KB-D)Internal 16TCSPI/IIC/IIS
NAND Boot,10 ADCx8(TSP),NANDIrDA(v1.1)
MPEG4 CODEC,SD(SDIO)/MMC
8bit Modem I/F(4KB dual),
Memory Stick
TFT/STN LCD Controller,S3C2460ARM926EJ-S266MHzROM/SRAM8,16,3215461(16)WDT/16TCx4UARTx3(IrDA)4-ch416FBGA
AC97,Camera I/F,(16KB-I,16KB-D)SDRAM/mSDRAMInternal 16TCSPIx2/IIC/IIS
NAND Boot,10 ADCx8(TSP),Teak DSPmDDR/NANDIrDA(v1.1)
MPEG4 CODEC,SD(SDIO)/MMC
USB hostx2,USB device,USB OTG
2D,3D Graphic/Memory Stick
TFT/STN LCD Controller,S3C2443ARM920T400MHzROM/SRAM8,16,3217469(23)WDT/16TCx4UARTx4(IrDA)6-ch400FBGA
AC97,Camera I/F,ATA Interfaces,(16KB-I,16KB-D)533MHzSDRAM/mSDRAMInternal 16TCSPIx2/IIC/IIS
NAND Boot,10 ADCx10(TSP),DDR/mDDRIrDA(v1.1)
SD(SDIO)/MMC/HS MMCNAND/oneNAND
8bit Modem I/F(4KB dual),
USB hostx2,USB 2.0 Device
CMOS IMAGE SENSORS
Part Pixels Pixels Pixel
Number Type Resol.O/F Horizontal Vertical Size Package Production Status
S5K53BE SOC VGA 1/5.8" 6404804wafer or die MP
S5KA3ASOC VGA 1/10"6404802.25wafer or die Sampling
S5K3AA SOC SXGA 1/3.2" 128010243.5wafer or die MP
S5K4AA SOC SXGA 1/4" 128010242.8wafer or die MP
S5K5AASOC SXGA 1/5"128010242.25wafer or die Sampling
S5K3BAF SOC UXGA 1/3.2" 160012002.8wafer or die Sampling
S5K3B1F CIS UXGA 1/3.2" 160012002.8wafer or die Sampling
S5K4BASOC UXGA 1/4"204810242.25wafer or die MP
S5K3C1F CIS QXGA 1/2.7" 204815362.5wafer or die Under Development
NOTE:* O/F:Optical Format
10b
SAMSUNG SEMICONDUCTOR,INC.
BR-06-ALL-002SEPTEMBER 2006
4-BIT MICROCONTROLLER FAMILY
Part NamePackage ROM RAM InterruptTimer/ LCD ADCPWM(1)Max.OSC.OTP
TypeKbytesNibbleI/O Pins(Int/Ext)CountersSIO(Seg/Com)(Bit x Ch)(BitxCh)DTMFFreq.Vdd (V)Equivalent
S3C1xxx (KS51) Series
S3C1840DZ0-DKB120DIP13215/196MHz1.8~3.6n/a
S3C1840DZ0-SKB120SOP
S3C1840DZ0-SMB124SOP
S3C1850DZ0-SMB124SOP132196MHz1.8~3.6n/a
S3C1860XZ0-DKB120DIP132156MHz1.8~3.6n/a
S3C1860XZ0-SKB120SOP
S3C7xxx (KS57) Series
S3C7048DZ0-AQB442SDIP4512363/4BT/WT/8Tx2Yes6MHz 1.8~5.5 S3P7048D
S3C7048DZ0-QZR444QFP
S3C7048DZ0-AQB842SDIP8
S3C7048DZ0-QZR844QFP
S3C70F4XZ0-AVB430SDIP4512243/2BT/WT/8TCYesComx46MHz1.8~5.5S3P70F4X
S3C70F4XZ0-SOB432SOP
S3C7235DZ0-QWR880QFP8512403/3BT/WT/WDT/8T Yes32/4 6MHz 1.8~5.5 S3P7235X
S3C7235DZ0-QWR516
S3C72H8XZ0-QTR864QFP8512213/326/4 1.8~5.5S3P72H8X BT/WT/WDT/8T/16TComx26MHz
S3C72K8XZ0-QWR880QFP81024273/440/82.0~5.5S3P72K8XBT/WT/8TCYesComx26MHz
S3C72M9XZ0-QAR5128QFP163840515/480/161.8~5.5S3P72M9X BT/WT/WDT/8T/16TYesComx36MHz
S3C72M9XZ0-QAR724
S3C72M9XZ0-QAR932
S3C72N5XZ0-QWR880QFP8512403/3BT/WT/8TCYes 32/4 6MHz 1.8~5.5 S3P72N5X
S3C72N5XZ0-QWR5 16
S3C72P9XZ0-QXR5100QFP161056394/456/16 6MHz BT/WT/8TC/16TC Yes 1.8~5.5 S3P72P9X
S3C72P9XZ0-QXR724
S3C72P9XZ0-QXR932
S3C72Q5XZ0-QXR8100QFP85264393/3BT/WT/8TCx2 60/12 6MHz 1.8~5.5 S3P72Q5X
S3C72Q5XZ0-QXR516
S3C7324XZ0-QTR464QFP4256322/3BT/WT/WDT/8T 28/4 8x4 6MHz 1.8~5.5 S3P7324X
S3C7335XZ0-QWR880QFP8512564/4BT/WT/WDT/8TYes 28/4 8x4 6MHz 1.8~5.5S3P7335X
S3C7335XZ0-QWR516
S3C7414DZ0-AQB442SDIP4256355/3BT/WT/WDT/8Tx2 Yes 8x6 (8x1) 6MHz 1.8~5.5S3P7414D
S3C7414DZ0-QZR444QFP
S3C7515DZ0-ATB564SDIP16512554/3BT/WT/8Tx2 Yes Yes6MHz 2.0~5.5 S3P7515D
S3C7515DZ0-QTR564QFP
S3C7528DZ0-AQB442SDIP4768353/3BT/WT/WDT/8Tx2 Yes6MHz 1.8~5.5 S3P7528D
S3C7528DZ0-QZR444QFP
S3C7528DZ0-AQB842SDIP8
S3C7528DZ0-QZR844QFP
S3C7544XZ0-AMB424SDIP4512172/2BT/WDT/8T6MHz 1.8~5.5 S3P7544X
S3C7544XZ0-SMB424SOP
S3C7559XZ0-ATB964SDIP321024554/3BT/WT/WDT/8Tx2 Yes Yes6MHz 1.8~5.5 S3P7559X
S3C7559XZ0-QTR964QFP
S3C7565XZ0-QXR5100QFP165120495/4BT/WT/WDT/8T/16T Yes 60/16 Yes6MHz 1.8~5.5 S3P7565X
S3C7588AZ0-C0C844Pellet8768254/4BT/WT/WDT/8TCx2Yes3.58MHz 2.7~5.5S3P7588X
NOTES:
*Under development.Contact Samsung
sales office for availability.
(1) ( ) S/W supported PWM
(2) SIO mode can be selected by S/W
(3) Flash:Writing endurance is 10K times
(4) MTP:Writing endurance is 100 times
Abbreviations:
ADC=Analog to Digital Converter
DTMF=Dual Tone Multi Frequency
CAS=CPE Alerting Signal
PWM=Pulse Width Modulation
SIO=Serial Input/Output
8T/16T=8-bit /16-bit Timer
BT/WT/WDT=Basic/Watch/Watchdog Timer
DAC=Digital to Analog Converter
ZCD=Zero Cross Detection circuit
Com=Comparator
FSK=Frequency Shift Keying
SEPTEMBER 2006BR-06-ALL-002
SAMSUNG SEMICONDUCTOR,INC.
11b
8-BIT MICROCONTROLLER FAMILY
Part NamePackage ROM RAM InterruptTimer/ SerialLCD ADCPWM(1)Max.OSC.OTP or Flash
TypeKbytesBytesI/O Pins(Int/Ext)CounterInterface(Seg/Com)(Bit x Ch)(BitxCh)Freq.Vdd (V)Equivalent
8256364/10BT/WT/8TCx2 SIO 16x8 10x4 8MHz 2.0~5.5 S3P9228A S3C9228AZ0-AQB842SDIP
S3C9xxx (KS86) Series
S3C9228AZ0-QZR844QFP
S3C9228AZ0-LRR848ELP
S3C9234XZ0-QTR464QFP4208525/7BT/WT/8TCx2SIO 32/4 8MHz 2.0~5.5 S3P9234X
S3C9404DZ0-AVB430SDIP4208223/3BT/WDT/8Tx2 8x8 (10x1) 10MHz 2.7~5.5S3P9404D
S3C9404DZ0-SOB432SOP
S3C9428XZ0-SNB428SOP4208245/4BT/WDT/8Tx2 IIC,SIO 10x12 12x2,(8x1) 16MHz 1.8~5.5 S3P9428X
S3C9428XZ0-SOB432SOP
S3C9428XZ0-AVB430SDIP
S3C9428XZ0-SNB828SOP8
S3C9428XZ0-SOB832SOP
S3C9428XZ0-AVB830SDIP
S3C9434XZ0-DIB418DIP411211/133/2BT/WDT/8T SIO 10x5 12x1 16MHz 3.0~5.5 S3P9434X
S3C9434XZ0-DKB420DIP
S3C9434XZ0-SKB420SOP
S3C9444XZ0-SCB48SOP420861/2BT/8TC 10x3 10MHz 2.0~5.5 S3F9444X(4)
S3C9444XZ0-DCB48DIP
S3C9454BZ0-DHB416DIP420814/182/2BT/8TC10x9 8x1 10MHz 2.0~5.5 S3F9454B(4)
S3C9454BZ0-SHB416SOP
S3C9454BZ0-VHB416TSSOP
S3C9454BZ0-DKB420DIP
S3C9454BZ0-SKB420SOP
S3C9454BZ0-VKB420SSOP
S3C9488XZ0-AOB832SDIP820826/36/38 6/4BT/8TUART 19/8 10x910MHz 2.2~5.5 S3F9488X(4)
S3C9488XZ0-SOB832SOP
S3C9488XZ0-AQB842SDIP
S3C9488XZ0-QZR844QFP
S3C9498XZ0-SNB828SOP820822/24/2611/5BT/8TCx4/16TC SIO,UART 10x8 12x1,(8x1) 8MHz 2.0~5.5 S3F9498X(4)
S3C9498XZ0-SOB832SOP
S3C9498XZ0-AOB832SDIP
S3C9498XZ0-AVB830SDIP
S3C94A5XZ0-QZR544QFP16368348/15BT/WT/8TC/16TCx2SIO 10x16 8x1,16x2 12MHz 2.0 ~5.5 S3F94A5X(4)
S3C94A5XZ0-AQB542SDIP
S3C9688XZ0-AQB842SDIP82083215/14BT/WDT/8T4.0~5.25S3P9688XUSB 6MHz
S3C9688XZ0-QZR844QFP
S3C8xxx (KS88) Series
S3C80A5BZ0-SMB824SOP8272195/8BT/WDT/8Tx2/16T8x18MHz 2.0~3.6S3P80A5A
S3C80A5BZ0-AMB824SDIP
S3C80A5BZ0-SMB524SOP16
S3C80A5BZ0-AMB524SDIP
S3C80B5XZ0-SMB824SOP8272195/8BT/WDT/8Tx2/16T8x1 4MHz 1.7~3.6 S3P80B5X
S3C80B5XZ0-AMB824SDIP
S3C80B5XZ0-SMB524SOP16
S3C80B5XZ0-AMB524SDIP
S3C80C5XZ0-SMB824SOP8272195/8BT/WDT/8Tx2/16T 8x1 4MHz 1.7~3.6 S3P80C5X
S3C80C5XZ0-AMB824SDIP
S3C80C5XZ0-SMB524SOP16
S3C80C5XZ0-AMB524SDIP
S3C80F9BZ0-SOB732SOP24272385/16BT/8TC/16TC8x1 8MHz 2.0~5.0 S3P80F9X
S3C80F9BZ0-AQB742SDIP
S3C80F9BZ0-QZR744QFP
S3C80F9BZ0-LRR748ELP
S3C80F9BZ0-SOB932SOP32
S3C80F9BZ0-AQB942SDIP
S3C80F9BZ0-QZR944QFP
S3C80F9BZ0-LRR948ELP
S3C80G9BZ0-SNB728SOP24272385/16BT/8TC/16TC 8x1 4MHz 1.7~3.6 S3P80G9X
S3C80G9BZ0-SOB732SOP
S3C80G9BZ0-AQB742SDIP
S3C80G9BZ0-QZR744QFP
S3C80G9BZ0-SNB928SOP32
S3C80G9BZ0-SOB932SOP
S3C80G9BZ0-AQB942SDIP
S3C80G9BZ0-QZR944QFP
S3C80J9XZ0-S0B932SOP322722612/10BT/8T/16T8x1 8MHz 1.95~3.6S3F80J9X(3)
S3C80J9XZ0-SNB928SOP
S3C80JBXZ0-QZRB44QFP6427238COMx4 8x1 8MHz 1.95~3.6 S3F80JBX(3)14/10 BT/8T/16Tx2
12b
SAMSUNG SEMICONDUCTOR,INC.
BR-06-ALL-002SEPTEMBER 2006
8-BIT MICROCONTROLLER FAMILY
Part NamePackage ROM RAM InterruptTimer/ SerialLCD ADCPWM(1)Max.OSC.OTP or Flash
TypeKbytesBytesI/O Pins(Int/Ext)CounterInterface(Seg/Com)(Bit x Ch)(BitxCh)Freq.Vdd (V)Equivalent
S3C8xxx (KS88) Series
S3C80JBXZ0-AQBB42SDIP
S3C80JBXZ0-SOBB32SOP14/10
S3C80L4XZ0-AOB432SDIP4144262/8BT/8TC8x1 8MHz 2.0~5.5 S3F80L4X(4)
S3C80L4XZ0-SOB432SOP
S3C80L4XZ0-SNB428SOP
S3C80M4XZ0-DKB420DIP412815/112/4BT/8TC8x1 10MHz 2.0~5.5 S3F80M4X(4)
S3C80M4XZ0-SKB420SOP
S3C80M4XZ0-DHB416DIP
S3C80M4XZ0-SHB416SOP
S3C8235BZ0-QTR864QFP8552328/8BT/8TCx2/16TC 24/8 10x88x2 8MHz 2.0~5.5 S3F8235X(4)
S3C8235BZ0-ETR864LQFP
S3C8235BZ0-QTR564QFP16
S3C8235BZ0-ETR564LQFP
S3C8245AZ0-TWR880TQFP8544458/8BT/WDT/8Tx2/16Tx2SIO 32/4 10x8 (8x2,16x1) 10MHz 1.8~5.5 S3P8245X
S3C8245AZ0-QWR880QFP
S3C8245AZ0-TWR580TQFP16
S3C8245AZ0-QWR580QFP
S3C8249XZ0-TWR780TQFP241056458/8BT/WDT/8Tx2/16Tx2 SIO 32/4 10x8 (8x2,16x1) 10MHz 1.8~5.5 S3P8249X
S3C8249XZ0-QWR780QFP
S3C8249XZ0-TWR980TQFP32
S3C8249XZ0-QWR980QFP
S3C825ACZ0-TWRA80TQFP4820966711/12BT/WT/8TC/16TC SIO,UART 28/8 10x4 (8x1,16x1) 8MHz 2.0~5.5S3P825AX
S3C825ACZ0-QWRA80QFP
S3C826AXZ0-QCRA144QFP489/12BT/8TCx3/16TCSIO 2k 12880/16 8x4 8x2 8MHz 2.0~5.5 S3P826AX
S3C8274XZ0-QTR464QFP44/8WT/BT/8TCx2 SIO 2565232/4 8MHz 2.0~3.6S3F8274X(4)
S3C8274XZ0-ETR464LQFP
S3C8275XZ0-QTR564QFP16512S3F8275X(3)
S3C8275XZ0-ETR564LQFP
S3C8278XZ0-QTR864QFP8256S3F8278X(4)
S3C8278XZ0-ETR864LQFP
S3C8285XZ0-QWR580QFP165126510/8BT/WT/8TCx2/16TCx2UART,SIO 32/8 10x8 8x1,16x1 11.1MHz 2.0~3.6S3F8285X(4)
S3C8285XZ0-TWR580TQFP
S3C8289XZ0-QWR980QFP321024S3F8289X(4)
S3C8289XZ0-TWR980TQFP
S3C828BXZ0-QWRB80QFP642560S3F828BX(3)
S3C828BXZ0-TWRB80TQFP
S3C82E5XZ0-QZR544QFP16208385/4BT/WT/8TCSIO23/48MHz2.0~3.6S3F82E5X(4)
S3C82E5XZ0-TBR548TQFP
S3C82F5XZ0-QXR5100QFP166/1260/168x18MHz2.0~5.0S3F82F5X(4)2.5K 44BT/WT/8TCx2/16TCSIO
S3C82F5XZ0-TXR5100TQFP
S3C830AXZ0-QXRA100QFP4810/8208472BT/WDT/8Tx2/16T SIOx2 40/4 8x4 8x1 4.5MHz 3.0~5.5S3P830AX
S3C831BXZ0-QXRB100QFP6410/82.5K 72BT/WDT/WT/8Tx2/16TSIOx2 40/4 8x8 8x1 9MHz 2.2~5.5 S3P831BX
S3C831BXZ0-TXRB100TQFP
S3C8325XZ0-QWR580QFP169/1251264BT/WDT/WT/8Tx2/16TSIO 28/8 8x8 8x1 4.5MHz 2.0~5.5 S3P8325X
S3C8325XZ0-TWR580TQFP
S3F833BXZ0-QXRB100QFP6413/8BT/WDT/WT/8Tx2/16TSIOx2,UARTx240/810x12 8x112MHzFlash Only 2.0~3.62.5K 86
S3F834BXZ0-TXRB13/8BT/WDT/WT/8Tx2/16TSIOx2,UARTx240/810x12 8x112MHz2.0~3.6Flash Only 2.5K 86100TQFP64
S3C8454XZ0-TWR48/8BT/WDT/8Tx2/16Tx2 SIO 8x4 4.5~5.5 S3P8454X10404280TQFP48x2,(16x2) 25MHz
S3C8454XZ0-QWR480QFP
S3C8469XZ0-ATB511/10BT/WDT/8Tx2/16Tx2UART,SIO 10x8 2.7~5.5 S3P8469X 5285664SDIP1614x2,(8x2) 12MHz
S3C8469XZ0-QTR564QFP
S3C8469XZ0-LTR564ELP
S3C8469XZ0-ATB964SDIP32
S3C8469XZ0-QTR964QFP
S3C8469XZ0-LTR964ELP
S3C8475XZ0-AQB842SDIP8272366/8BT/WDT/8T/16TUARTx2 10x8 (8x1,10x1) 12MHz 2.7~5.5 S3P8475X
S3C8475XZ0-QZR844QFP
S3C8475XZ0-AQB542SDIP16
S3C8475XZ0-QZR544QFP
S3C848AXZZ-ATBA64SDIP4820645615/14 BT/8TCx4/16Tx2 UARTx2 SIO10x8 14x2,(8x2) 12MHz 2.7~5.5 S3P848AX
S3C848AXZZ-QTRA64QFP
S3F833BX(4)
S3F834BX(4)
SEPTEMBER 2006BR-06-ALL-002
SAMSUNG SEMICONDUCTOR,INC.
13b
8-BIT MICROCONTROLLER FAMILY
Part NamePackage ROM RAM InterruptTimer/ SerialLCD ADCPWM(1)Max.OSC.OTP or Flash
TypeKbytesBytesI/O Pins(Int/Ext)CounterInterface(Seg/Com)(Bit x Ch)(BitxCh)Freq.Vdd (V)Equivalent
S3C8xxx (KS88) Series
S3C84A4XZ0-QTR464QFP 4784297/48x4 BT/8TCx2/16Tx2 8x2,(8x2) 30MHz 4.5~5.5 S3P84A4X
S3C84BBXZ0-TWRB80TQFP6420647014/10 10x8 BT/8TCx2/16TCx2/8Tx2UARTx2,SIO8*1 (DAC) 10MHz 2.7~5.5 S3F84BBX(3)
S3C84BBXZ0-QWRB80QFP
S3C84DBXZ0-TWRB100TQFP6420649014/10 10x8 BT/8TCx4/16TCx2 UARTx2,SIO 48/8 8*1 (DAC) 10MHz 2.7~5.5 S3F84DBX(3)
S3C84DBXZ0-QWRB100QFP
S3C84E9XZ0-AQB942SDIP1627234/36 9/12BT/WT/8T/8TC/16TCx2UART 10x8 (8x1) 12MHz 2.7~5.5 S3P84E9X
S3C84E9XZ0-QZR944QFP
S3C84H5XZ0-AOB532SDIP1627222/20/18 12/4BT/WT/8TCx2/16TCx2UART,SIO 10x8 10x1 10MHz 2.4~5.5 S3F84H5X(4)
S3C84H5XZ0-SOB532SOP
S3C84H5XZ0-AVB530SDIP
S3C84H5XZ0-SNB528SOP
S3C84I8XZ0-AQB842SDIP829234/32 12/4BT/WT/8TCx2/16TCx2UART,SIO 16/8 10x8 10x1 10MHz 2.4~5.5 S3F84I8X(4)
S3C84I8XZ0-QZR844QFP
S3C84I9XZ0-AQB942SDIP32528S3F84I9X(3)
S3C84I9XZ0-QZR944QFP
S3F84K4XZ0-DHB416DIP420811/182/2BT/16(8X2)T10x912x18MHz2.0~5.5Flash Only
S3F84K4XZ0-SHB416SOP
S3F84K4XZ0-VHB416SSOP
S3F84K4XZ0-RHB416TSSOP
S3F84K4XZ0-DKB420DIP
S3F84K4XZ0-SKB420SOP
S3F84K4XZ0-VKB420SSOP
S3F84MBXZ0-TWRB*80TQFP6420647017/10BT/8TCx2/16TCx2/8Tx2UARTx3,SIOz210x58x210MHz2.4~5.5Flash Only
S3F84K4X(4)
S3F84MBX(3)
Flash Only S3F84P4XZ0-SCB4*8SOP420862/2BT/16(8X2)T10x412x110MHz2.0~5.5
S3F84P4X(4)
S3F84MBXZ0-QWRB*80QFP
S3F84P4XZ0-DCB4*8DIP
S3C851BXZ0-QDRB160QFP641808421/7BT/WDT/WT/8T/16TUART,SIO 56/34 10x4 3.58MHz 2.7~5.5 S3P851BX
S3C852BXZ0-QXRB 100QFP 6418088036897BT/WDT/WT/8T/16T SIO 3.58MHz 2.7~5.5 S3P852BX
S3C863AXZ0-AQB942SDIP321040277/3BT/8TC/8T/12CM/M IIC,Slave IIC 8x4 8x7 12MHz 3.0~5.5 S3P863AX
S3C863AXZ0-QZR944QFP
S3C863AXZ0-AQBA42SDIP48S3P863AX
S3C863AXZ0-QZRA44QFP
S3C8647XZ0-AOB532SDIP16384196/3 BT/8TC/8T/12C IIC 4x4 8x6 12MHz 4.0~5.5 S3F8647X(4)
S3C8647XZ0-AOB724
S3C866BXZ0-AQBB*42SDIP641040309/2BT/WDT/8TCx3 IIC8x8 8x7 24MHz 2.3~3.6V S3F866BX(4)
S3C866BXZ0-QZRB*44QFP
S3C866BXZ0-PZBB*44PLCC
S3C880AXZ0-AQBA42SDIP48336265/4BT/8TCx2 8x4 14x2,8x4(8x1)8MHz 4.5~5.5S3F880AX(4)
S3C8849XZ0-AQB742SDIP24272265/4BT/WDT/8Tx2 4x414x2,8x4(8x1)8MHz 4.5~5.5 S3P8849X
S3C8849XZ0-AQB932
NOTES:
1*Under Development.Contact Samsung sales office for availability
2(1) ( ) S/W supported PWM
(2) SIO mode can be selected by S/W
(3) Flash:Writing endurance is 10K times
(4) MTP:Writing endurance is 100 times
3Abbreviations:
LVR = Low Voltage Reset
ZCD=Zero Cross Detection circuit
FSK=Frequency Shift Keying
RDS=Radio Data System
DAC=Digital to Analog Converter
PWM=Pulse Width Modulation
SIO=Serial Input/Output
LIN=Local Interface Network
DTMF=Dual Tone Multi Frequency
DDC=Display Data Channel
SDT=Stuttered Dial Tone
BT/WT/WDT=Basic/Watch/Watchdog timer
8T/16T=8-bit /16-bit Timer
OSD=On Screen Display
ADC=Analog to Digital Converter
CAS=CPE Alerting Signal
LVD = Low Voltage Detector
PGM=Pattern Generation Module
Com=Comparator
14b
SAMSUNG SEMICONDUCTOR,INC.
BR-06-ALL-002SEPTEMBER 2006
MICROCONTROLLER ORDERING INFORMATION
S 3 X X X X X X X X - X X X X X X X
1 2 3 4 5 6 7 8 910 1112 131415161718
1.System LSI (S)11.(--)
2.Large Classification:Microcontroller(3)12.Package Type
3.Small Classification
C:8 H:16 I:18
K:20 M:24 N:28
O:32
- TQFP
C:MASK ROM E:EVA-CHIP
F:FLASH P:OTP
3:MCP
4.Core
1:51 4-bit 2:32-bit ARM9
3:17 16-bit 4:32 32-bit
5:32-bit ARM10 6:56 4-bit
7:57 4-bit 8:88 8-bit
9:86 8-bit A:15 Other
B:8-bit CALM RISC MAC
C:16-bit CALM RISC MAC
D:32-bit CALM RISC MAC
I:CUSTOM MCU
J:SC-200
K:8-bit CALM RISC
L:16-bit CALM RISC
R:128-bit CALM RISC
S:SC-100
5~6.Application Category
A:SDIP B:LGA
C:CHIP BIZ D:DIP
E:LQFP F:WQFP
G:BGA H:CSP
J:BQFP K:UELP
L:ELP M:QFPH
N:COB P:PLCC
Q:QFP S:SOP
T:TQFP V:TEBGA
W:WAFER Y:FBGA
Z:SBGA
3.Package Pin
A:128 T:64 W:80
X:100
- TEBGA
X:492
- FBGA
A:337 B:81 C:144
D:160 E:208 F:180
G:285 H:320 K:105
L:400 O:272 P:504
Q:289T:64
- SBGA
A:432
- WAFER
Wafer/CHIP BIZ = 0(NONE)
- SDIP
0:None 1:Cust1 2:Cust2
0n:General Purpose 1n:Voice
2n:LCD 3n:Audio
4n:General A/D 5n:Telecom
6n:PC & Peripheral,OA7n:VFD
8n:Video 9n:Special (IC Card)
An:General Purpose-1 Cn:C
Fn:Telecom-1 Nn:Intel Application
Zn:Assignment Code
* "n":Serial No (1°„Z)
7.Rom Master
14.Packing
B:56 M:24 O:32
Q:42 T:64 V:30
B:Tube
- LGA
U:Bulk
A:88 C:83 J:176
R:Tray
- DIP
T:Tape & Reel
C:8 H:16 I:18
S:Tape & Reel Reverse
K:20 N:28 P:40
C:Chip Biz
- LQFP
D:Chip Biz (3 Inch tray)
C:144 D:160E:208
E:Chip Biz (4 Inch tray)
G:256 J:176R:48
F:Chip Biz (Reverse)
T:64 W:80X:100
W:WF Biz Draft Wafer
- WQFP
X:WF Biz Full Cutting
T:64
7:Tape & Reel (Pb-Free PKG)
- BGA
8:Tray (Pb-Free PKG)
A:272 B:416
9:Tube (Pb-Free PKG)
- CSP
J:176
- BQFP
15.ROM Size
B:132
-UELP
0:0K byte 1:1K byte
2:2K byte 3:12K byte
4:4K byte 5:16K byte
6:6K byte 7:24K byte
8:8K byte 9:32K byte
A:48K byte B:64K byte
C:96K byte D:128K byte
F:256K byteG:384K byte
H:512K byteJ:1M byte
K:1M byte
8.Version
T:64
- ELP
R:48 T:64
- QFPH
D:160 F:240
- COB
C:8 D:8CNCL
- PLCC
C:52 Z:44
- QFP
A~Z
*1st Version °˜ X
9~10.Mask Option
A:128 C:144 D:160
E:208 G:256 R:48
T:64 U:304 W:80
X:100 Z:44
- SOP
0:0K byte 1:1K byte
2:2K byte 3:12K byte
4:4K byte 5:16K byte
6:6K byte 7:24K byte
8:8K byte 9:32K byte
A:48K byte B:64K byte
C:96K byte D:128K byte
E:Extended F:256K byte
G:384K byte H:512K byte
J:1M byte K:1M byte
M:Military N:Industrial
X:Special MK3Y:Special MK2
Z:Special MK1
* Smart Card IC:EEPROM Size
* X,Y,Z:Special Marking ( MASKROM)
SEPTEMBER 2006BR-06-ALL-002
SAMSUNG SEMICONDUCTOR,INC.
15b
SERIAL EEPROMS
Write Cycle
Part NumberDensity (bit)Write ProtectionVopr (V)Time (Max)InterfacePackage
S524A40X20-RCT0 2Kby Hardware & Software 1.8 ~ 5.5 5 ms I2C BUS 8TSSOP (T&R)
S524A40X21-DCB02Kby Hardware1.8 ~ 5.55msI2C BUS8DIP
S524A40X21-SCB02Kby Hardware1.8 ~ 5.5 5 msI2C BUS8SOP
S524A40X21-SCT02Kby Hardware1.8 ~ 5.5 5 msI2C BUS8SOP (T&R)
S524A40X41-DCB04Kby Hardware1.8 ~ 5.5 5 msI2C BUS8DIP
S524A40X41-SCB04Kby Hardware1.8 ~ 5.5 5 msI2C BUS8SOP
S524A40X41-SCT04Kby Hardware1.8 ~ 5.5 5 msI2C BUS8SOP (T&R)
S524A60X51-DCB016Kby Hardware1.8 ~ 5.5 5 msI2C BUS8DIP
S524A60X51-SCB016Kby Hardware1.8 ~ 5.5 5 msI2C BUS8SOP
S524A60X51-SCT016Kby Hardware1.8 ~ 5.5 5 msI2C BUS8SOP (T&R)
S524A60X81-DCB08Kby Hardware1.8 ~ 5.5 5 msI2C BUS8DIP
S524A60X81-SCB08Kby Hardware1.8 ~ 5.5 5 msI2C BUS8SOP
S524A60X81-SCT08Kby Hardware1.8 ~ 5.5 5 msI2C BUS8SOP (T&R)
S524AB0X91-DCB032Kby Hardware1.8 ~ 5.5 5 msI2C BUS8DIP
S524AB0X91-SCB032Kby Hardware1.8 ~ 5.5 5 msI2C BUS8SOP
S524AB0X91-SCT032Kby Hardware1.8 ~ 5.5 5 msI2C BUS8SOP (T&R)
S524AB0XB1-DCB064Kby Hardware1.8 ~ 5.5 5 msI2C BUS8DIP
S524AB0XB1-SCB064Kby Hardware1.8 ~ 5.5 5 msI2C BUS8SOP
S524AB0XB1-SCT064Kby Hardware1.8 ~ 5.5 5 msI2C BUS8SOP (T&R)
S524AD0XF1-RCT0256Kby Hardware1.8 ~ 5.5 5 msI2C BUS8TSSOP
NOTES:All listed products are in production
Temperature:-25 ~ 70c
All products offer 100-year data retention,a 16M page buffer and two-wired serial I2C-bus interfaces.
All products operate at 100KHz,400KHz clock frequency.
Package:DCBO=8DIP
16b
SAMSUNG SEMICONDUCTOR,INC.
BR-06-ALL-002SEPTEMBER 2006
15",17"
19"
20.1",21.3"
22.0",23.0",24.0",30.0"
HD 23",26",32",40",46"
FULLHD 40",46”,52”,57”
MAIN DISPLAYS
MAIN + EXTERNAL DISPLAYS
40",46",57",82"
DSC/DVC/PHOTO PRINTERS/PMP/VOIP/GAMES
MINI PCS/CNS/CAR TVS/P-DVDS/
INDUSTRIAL APPLICATIONS
BR-06-ALL-003
MONITOR/INDUSTRIAL LCD PANELS - 15.0",17.0”
15.0" XGA,17.0" SXGA
15.0" XGA17.0" SXGA
Resolution
Number of Pixels
Active Area (mm)
Pixel Pitch (mm)
LTM170EU-L21/-L31LTM170EX-L21 /-L31LTM170E8 -L01LTM150XO-L01LTB150XT-A01
SXGASXGASXGAXGAXGA
1,024 x 7681,024 x 7681,280 x 1,0241,280 x 1,0241,280 x 1,024
304.1 X 228.1304.1 X 228.1337.9 x 270.3337.9 x 270.3337.9 x 270.3
0.297 0.297 0.264 0.264 0.264
Mode
BTNBTNBTN II / BTN IIIBTN II / BTN IIIPVA
Number of Colors
16.2M16.2M16.2M / 16.7M16.2M / 16.7M6-Bit Hi-FRC =16M
Contrast Ratio (typ.)
700:1700:1700:1 / 1:000:1700:1 / 1:000:11,000:1
Brightness (cd/m)
2
250450300300280
Response Time (ms at 25°C)
8ms8ms8ms / 5ms8ms / 5ms< 25ms
Color Gamut60%60%72%72%72%
Viewing Angle (U/D/L/R)
75/60/75/7575/60/75/7575/75/75/60 / 160/16075/75/75/60 / 160/16089/89/89/89
Interface
1 Ch.LVDS 1 Ch.LVDS 2 Ch.LVDS2 Ch.LVDS2 Ch.LVDS
Supply Voltage (V)
3.33.3555
Backlight
2 CCFL2 CCFL4 CCFL4 CCFL4 CCFL
Outline Dimensions (mm)
326.5 x 253.5 x 11.5326.5 x 253.5 x TBD358.5 x 296.5 x 17.5354.9 x 290.3 x 12.8354.9 x 290.3 x 13.3
Weight (g)
1,0501,0502,1001,6501,650
Production
NowNowNow / AugustNow / AugustNow
NOTES:Samsung LCD Product Matrix is based on 2006-2007 availability
MONITOR/INDUSTRIAL LCD PANELS - 19.0"
19.0" SXGA
19.0”SXGA
LTM190EX-L21/-L31LTM190E4-L02LTM190E4-L03LTB190E1-L01LTB190E2-L01LTB190E2-L02LTM190M2-L01
Resolution
SXGASXGASXGASXGASXGASXGAWide XGA+
Number of Pixels
1,280 x 1,0241,280 x 1,0241,280 x 1,0241,280 x 1,0241,280 x 1,0241,280 x 1,0241,440 x 900
Active Area (mm) 408.2 x 255.2
376.3 X 301.1376.3 X 301.1376.3 X 301.1376.3 X 301.05376.3 X 301.1376.3 X 301.1
Pixel Pitch (mm) 0
0.294 0.294 0.294 0.294 0.294 0.294 .284
Mode
BTN II / BTN IIIPVAPVAS-PVAPVAPVABTN III
Number of Colors 16.7M
16.7M16.7M16.7M16.7M16.7M16.7M
Contrast Ratio 1,000:1
700:1 / 1:000:11,500:11,000:11,000:11,500:11,000:1
Brightness (cd/m)
2
300250300250250700300
Response Time
(ms at 25°C)
8ms / 5ms< 20ms< 25ms20ms25ms25ms5ms
Color Gamut
72%72%72%72%72%72%72%
Viewing Angle (U/D/L/R)
75/75/75/60/160/16089/89/89/8989/89/89/8990/90/90/9089/89/89/8989/89/89/8980/80/80/80
Interface
2 Ch.LVDS2 Ch.LVDS2 Ch.LVDS2 Ch.LVDS2 Ch.LVDS2 Ch.LVDS2 Ch.LVDS
Supply Voltage (V)
5555555
Backlight
4 CCFL4 CCFL4 CCFL4 CCFL4 CCFL4 CCFL4 CCFL
Outline Dimensions (mm)
396.0 x 324.0 x 16.5396.0 x 324.0 x 17.5396.0 x 324.0 x 20.5396 x 324 x 16.5388.6 x 320.5 x 15.2392.4 x 317.4 x 46.1428.0 x 278.0 x 18.0
Weight (g)
2,2002,6002,700TBD2,6003,0002,500
Production
Now / AugustNowNowNowNowNowNow
NOTE:Samsung LCD Product Matrix is based on 2006-2007 availability
SEPTEMBER 2006
BR-06-ALL-003
SAMSUNG SEMICONDUCTOR,INC.
3c
MONITOR/INDUSTRIAL LCD PANELS - 20.1",21.3"
20.1" UXGA,20.1" WSXGA+
21.3" UXGA,21.3" QXGA
20.1" UXGA21.3" UXGA21.3" QXGA20.1" WSXGA+
LTM201U1-L01 LTM213U6-L01LTB213QR-L01LTM201M1-L01LTM201M2-L01
Resolution
Number of Pixels
QXGAWide SXGA+Wide SXGA+UXGAUXGA
2,048 x 1,5361,680 x 1,0501,680 x 1,0501,600 x 1,2001,600 x 1,200
433.2 x 325.9433.4 x 270.9433.4 x 270.9408.8 x 306.0432.0 X 324.0
0.212 0.258 0.258 0.255 0.270
S-PVAS-PVABTN IIIS-PVAS-PVA
Monochrome 10-bit16.7M6-Bit Hi-FRC =16.7M16.7M16.7M
2,000:11,000:11,000:11,000:11,000:1
1,500300300300300
16ms16ms (8ms G-G)5ms8ms25ms
-72%72%72%72%
90/90/90/9089/89/89/8980/80/80/8090/90/90/9089/89/89/89
2 Ch.LVDS 2 Ch.LVDS 2 Ch.LVDS 2 Ch.LVDS 2 Ch.LVDS
55555
6 CCFL6 CCFL6 CCFL6 CCFL6 CCFL
457 x 350 x 42.6459.4 x 296.4 x 23.3459.4 x 296.4 x 19.8432.0 x 331.5 x 25.0462.0 x 361.0 x 22.5
2,4003,1002,7503,2503,500
NowNowQ306NowNow
Active Area (mm)
Pixel Pitch (mm)
Mode
Number of Colors
Contrast Ratio
Brightness (cd/m)
2
Response Time
(ms at 25°C)
Color Gamut
Viewing Angle (U/D/L/R)
Interface
Supply Voltage (V)
Backlight
Outline Dimensions (mm)
Weight (g)
Production
NOTE:Samsung LCD Product Matrix is based on 2006-2007 availability
MONITOR/INDUSTRIAL LCD PANELS - 22.0",23.0",24.0",30.0"
22.0" WSXGA+,23.0" WXGA
24.0" WUXGA,24.0" WUXGA
30.0" WQXGA
22.0" WSXGA+23.0" WXGA24.0" WUXGA24.0" WUXGA30.0" WQXGA
LTM240M2-L02LTB240M1-L01LTB300M1-P01LTM220M1-L01LTB230W1-L01
Wide UXGAWide UXGAWide QXGAWide SXGA+WXGA
1,920 x 1,2001,920 x 1,2002,560 x 1,6001,680 x 1,0501,366 x 768
518.4 X 324.0518.4 X 324.0641.3 x 400.8473.8 x 296.1508.15 x 324.0
0.270 0.270 0.251 0.282 0.372
S-PVAS-PVAS-PVABTN IIIS-PVA
16.7M16.7M16.7M16.7M16.7M
1,000:11,000:11,000:11,000:11,200:1
500250400300350
6ms (Grey to Grey)8ms (Grey to Grey)8ms 5ms25ms
72%104%72%72%72%
89/89/89/8990/90/90/9090/90/90/9080/80/80/8090/90/90/90
2 Ch.LVDS2 Ch.LVDSDual TMDS2 Ch.LVDS 2 Ch.LVDS
551255
6 CCFL,Direct BLULED Backlight16 CCFL4 CCFL6 CCFL
546.4 x 352.0 x 35.8549.1x 368.4 x 33677.3 x 436.8 x 42.3493.7 x 320.1 x 17.0546.0 x 318.3 x 46.3
3,200TBD5,1002,8003,000
NowQ107NowQ306Now
Resolution
Number of Pixels
Active Area (mm)
Pixel Pitch (mm)
Mode
Number of Colors
Contrast Ratio
Brightness (cd/m)
2
Response Time
(ms at 25°C)
Color Gamut
Viewing Angle (U/D/L/R)
Interface
Supply Voltage (V)
Backlight
Outline Dimensions (mm)
Weight (g)
Production
NOTE:Samsung LCD Product Matrix is based on 2006-2007 availability
4c
SAMSUNG SEMICONDUCTOR,INC.
BR-06-ALL-003
SEPTEMBER 2006
HD LCD TV/A.V.- 23",26",32",40",46"
23",26",32",40",46"
HD
23"26"32"40"46"
LTA230W2-L01LTA260W3-L01LTA320WT-L16LTA400WT-L11LTA400WS-LH1LTA460WT-L03LTA460WT-LH1
Resolution
WXGAWXGAWXGAWXGAWXGAWXGAWXGA
Number of Pixels
1,366 x 7681,366 x 7681,366 x 7681,366 x 7681,366 x 7681,366 x 7681,366 x 768
Active Area (mm)
508.1 x 285.7 575.8 x 323.7697.7 x 392.2885.2 x 497.7 885.2 x 497.7 1,018.1 x 572.51,018.1 x 572.5
Pixel Pitch (mm)
0.3720.4220.5110.6480.648 0.7460.746
Wide V/A Technology
PVAPVAS-PVAS-PVAS-PVAS-PVAS-PVA
Number of Colors16.7M
16.7M16.7M16.7M16.7M16.7M16.7M
Color Gamut
72727272927292
Contrast Ratio
1,200:11,200:11,200:11,200:11,200:11,200:11,200:1
Brightness (cd/m)
2
450450500500500500500
Response Time
(ms at 25°C)
8 (G/G)8 (G/G)8 (G/G)8 (G/G)8 (G/G)8 (G/G)8 (G/G)
Interface
LVDS (1 ch.)LVDS (1 ch.)LVDS (1 ch.)LVDS (1 ch.)LVDS (1 ch.)LVDS (1 ch.)LVDS (1 ch.)
Outline Dimensions (mm)
546.0 x 318.3 x 47.3626.0 x 373.0 x 48.0760.0 x 450.0 x 50.0952.0 x 551.0 x 50.1952.0 x 551.0 x 50.11,083.0 x 627.0 x 56.51,083.0 x 627.0 x 50.0
Weight (kg)
3.04.57.011.511.515.010.0
Production
Q306Q306Q306NowNowQ306Q306
NOTES:Viewing Angle (H/V):PVA-178°/178°,S-PVA-180°/180°
G/G - Gray to gray response time
The specifications represent the main model of each product and are subject to change without prior notice.
FULL-HD LCD TV/A.V.- 40",46”,52”,57”
40",46”,52”,57”
Full-HD
40”46”52”57”
LTA400HS-L01 LTA400HS-LH1LTA460HS-LH3LTA520HT-LH1LTA570HS-L01
Resolution
WUXGAWUXGAWUXGAWUXGAWUXGA
Number of Pixels
1,920 x 1,0801,920 x 1,0801,920 x 1,0801,920 x 1,0801,920 x 1,080
Active Area (mm)
885.6 x 498.2885.6 x 498.21,018.1 x 572.71,152.0 x 648.01,251.4 x 703.9
Pixel Pitch (mm)
0.4610.4610.530 0.600 0.651
Wide V/A Technology
S-PVAS-PVAS-PVAS-PVAS-PVA
Number of Colors
16.7M16.7M16.7M1.07B1.07B
Color Gamut
7292929272
Contrast Ratio
1,200:11,200:11,200:11,000:11,200:1
Brightness (cd/m)
2
500450500500500
Response Time
(ms at 25°C)
8 (G/G)8 (G/G)6 (G/G)8 (G/G)8 (G/G)
Interface
LVDS (2 ch.)LVDS (2 ch.)LVDS (2 ch.)LVDS (2 ch.)LVDS (2 ch.)
Outline Dimensions (mm)
952.0 x 551.0 x 53.5952.0 x 551.0 x 47.61,083.0 x 627.0 x 50.01,236.0 x 719.2 x 57.51,328.4 x 765.3 x 63.0
Weight (kg)
12.511.515.523.030.0
Production
NowNowQ306Q306Now
NOTES:Viewing Angle (H/V):PVA-178°/178°,S-PVA-180°/180°
G/G - Gray to gray response time
The specifications represent the main model of each product and are subject to change without prior notice.
SEPTEMBER 2006
BR-06-ALL-003
SAMSUNG SEMICONDUCTOR,INC.
5c
MOBILE PHONE:MAIN DISPLAYS
SpecificationsLTS166QQ-F0ALTS182QQ-F07LTS190QC-F0NLTS200QC-F0VLTS220QC-F0HLTS200QV-F0ELTS222QV-F0YLTP241QV-F02
Display Size (inch)
Resolution
Display Mode
Display Colors
Interface
Brightness (cd/m)
2
Contrast Ratio
Panel Power
Consumption (mW)
B/L Power
Consumption (mW)
Active Area (mm)
Module Dimensions (mm)
Sample Status
Mass Production
1.661.821.922.222.222.41
128xRGBx160128xRGBx160176xRGBx220176xRGBx220176xRGBx220240xRGBx320240xRGBx320240xRGBx320
TMRTMRTMRTMRTMRTMRTMRTMR
65K65K65K65K262K65K262K262K
CPUCPUCPUCPUCPUCPUCPUMDDI
250160250240180150180300
300:1150:1250:1TBD200:1400:1350:1400:1
101014TBD254222TBD
150150150TBDwo BLU256280TBD
26.3x32.928.9x36.030.1x37.631.7x39.634.8x43.630.2x40.333.8x45.136.7x48.9
32.1x42.4x2.534.0x46.7x3.535.9x47.8x2.238.2x51.3x2.539.3x67.3x1.5235.4x49.8x2.439.8x56.9x2.842.6x59.3x2.25
NowNowNowNowNowNowNowQ4 `06
NowNowNowQ4 `06NowNowQ3 `06Q2 `07
(wo BLU)
NOTES:TMR:Transmissive with Micro-ReflectivitymWV:Mobile wide-view plus
TSP:Touch-screen panelSLS:Single crystal like silicon
Specifications represent the main model of each product and are subject to change without prior notice
For More Information:/Products/TFTLCD/common/product_?family_cd=LCD03
MOBILE PHONE:MAIN + EXTERNAL DISPLAYS
SpecificationsLTD222QV-F0E
Display Size (inch)
Resolution
Display Mode
Display Colors
Interface
Brightness (cd//m)
2
Contrast Ratio
Panel Power
Consumption (mW)
B/L Power
Consumption (mW)
Active Area (mm)
MainExternal
2.221.07
240xRGBx32096xRGBx96
TMRTMR
65K65K
18 bit RGB8 bit CPU
200110
600:1600:1
378
342-
12.3x19.333.8x45.1
40.5x57.3x540.5x57.3x5
NowNow
NowNow
Module Dimensions (mm)
Sample Status
Mass Production
NOTES:TMR:Transmissive with Micro-ReflectivityMHD:Mobile High Definition
Specifications represent the main model of each product and are subject to change without prior notice.
For More Information:/Products/TFTLCD/common/product_?family_cd=LCD03
6c
SAMSUNG SEMICONDUCTOR,INC.
BR-06-ALL-003
SEPTEMBER 2006
INFORMATION DISPLAY APPLICATIONS - 40",46",57",82"
LTI400WT-L01LTI460WT-L17LTI460WT-L13LTI400HS-L02LTI460HS-L03LTI570HH-L01LTI820HS-L01
40" Narrow Bezel46" Narrow Bezel46"40" Full HD46" Full HD57"82"
Resolution
WXGAWXGAWXGAWXGAWXGAWXGAWXGA
Aspect Ratio
16:0916:0916:0916:0916:0916:0916:09
Number of Pixels
1,366 x 7681,366 x 7681,366 x 7681,920 x 1,0801,920 x 1,0801,366 x 7681,366 x 768
Active Area (mm)
885.2 X 497.71,018.1 x 572.71,018.1 x 572.7885.2 X 497.71018.1 x 572.71,251.36 x 703.891,805.76 x 1,015.74
Pixel Pitch (mm)
0.6480.7450.7450.6480.7450.6520.941
Mode
S-PVAS-PVAS-PVAS-PVAS-PVAS-PVAS-PVA
Number of Colors
16.7 M16.7 M16.7 M16.7 M16.7 M16.7 M16.7 M
Color Gamut
72%72%72%72%72%72%72%
Contrast Ratio (typ.)
1,200:11,200:11,200:11,200:11,200:11,200:11,200:1
Brightness (cd/m)
2
700700700450500600600
Response Time
(ms at 25°C)
8 ms8 ms8 ms8 ms8 ms8 ms8 ms
Viewing Angle (U/D/L/R)
89/89/89/8989/89/89/8989/89/89/8989/89/89/8989/89/89/8989/89/89/8989/89/89/89
Interface
1 Ch.LVDS1 Ch.LVDS1 Ch.LVDS2 Ch.LVDS2 Ch.LVDS2 Ch.LVDSLVDS / TMDS
Power Supply Voltage (V)
5v(Logic),24v(BLU)5v(Logic),24v(BLU)5v(Logic),24v(BLU)12v(Logic),24v(BLU)12v(Logic),24v(BLU)12v(Logic),24v(BLU)12v(Logic),24v(BLU)
Outline Dimensions (mm)
911.7 x 524.2 x 58.71,047.4 x 600.6 x 56.01,083 x 627 x 67.8952.0 x 551.0 x 50.11,083 x 627 x 56.51,328 x 764 x 63.51,875 x 1,080 X 84.1
Weight (g)
12,60016,50016,500TBDTBDTBDTBD
Production
NowNowNowOctoberOctoberOct./Nov.Nov./Dec.
NOTE:All monitors are 16:9 WXGA,high contrast,fast response time,high brightness
SEPTEMBER 2006
BR-06-ALL-003
SAMSUNG SEMICONDUCTOR,INC.
7c
DIGITAL IMAGING:ENTERTAINMENT
SpecificationsLTE182QQ-F03LTE222QV-F01LTV250QV-F01LTV250QV-F02LTV200WQ-F02
ApplicationMP3/DAB/DVB-HMP4/DAB/DVB-HMP5/DAB/DVB-HMP6/DAB/DVB-HDSC
Display Size (inch)1.82 2.22 2.50 2.50 2.00
Resolution128xRGBx160320xRGBx240320xRGBx240320xRGBx240480x240
Display ModeTMRTMRTMRTMRTMR
Display Colors65K262K16.7M262K16.7M
InterfaceCPUCPU8bit RGB6bit RGB8bit RGB
Brightness (cd/m_)250190220220190
Contrast Ratio250:1400:1300:1300:1250:1
Panel Power Consumption45404025
B/L Power Consumption150165200200115
Active Area (mm)26.3x32.944.64x33.8450.88x38.0450.88x38.0440.84x30.48
Module Dimensions (mm)34.9x45.755.96x40.0456.98x47.9456.98x47.9447.24x41.08
Sample StatusAvailableAvailableAvailableAvailableAvailable
Mass ProductionMPMPMPMPMP
SpecificationsLTV236WQ-F09LTV250QV-F0ALTV300QV-F01LTV300QV-C02LTV300GV-B01
ApplicationDSCDSCDSCDSCDSC/PMP/VoIP
Display Size (inch)2.36 2.50 3.00 3.00 3.00
Resolution480x234960x240960x242960x243640xRGBx480
Display ModeTMRTMRmSWV+mSWV+mSWV+
Display Colors16.7M16.7M16.7M16.7M16.7M
InterfaceCPUCPU8bit RGB6bit RGB8bit RGB
Brightness (cd/m_)240250250300TBD
Contrast Ratio200:1250:1400:1500:1TBD
Panel Power Consumption25(30)
B/L Power Consumption150(160)TBDTBDTBD
Active Area (mm)48.05x35.9249.95x37.4460.48x44.7660.94x49.3260.48x45.36
Module Dimensions (mm)55.20x47.5055.95x47.9071.98x51.7669.56x51.5268.65x45.36
Sample StatusAvailable2006.122006.122007.42006.12
Mass ProductionMP2007.1Q2007.1Q2007.2Q2007.2Q
DSC/DVC/Photo Printers/PMP/VoIP/Games/Other
NOTES:TMR:Transmissive with Micro-ReflectivitymSWV+:mobile Super Wide View (mPVA)
Specifications represent the main model of each product and are subject to change without prior notice.
8c
SAMSUNG SEMICONDUCTOR,INC.
BR-06-ALL-003
SEPTEMBER 2006
MOBILE AV
SpecificationsLTV350QV-F04LTV350QV-F0ALTV350QV-F0ELTV350QV-F0FLTV350QV-F0GLTE400WQ-F01LTE400WQ-F02LTE400WQ-E01
Mini PCs/CNS/Car TVs/P-DVDs/Industrial Applications
Display Size (inch)3.50 3.50 3.50 3.50 3.50 4.00 4.00 4.00
Resolution320xRGBx240320xRGBx240320xRGBx240320xRGBx240320xRGBx240480x272xRGB480x272xRGB480x272xRGB
Display ModeTMRTMRTMRTMRTMRTMRTMRTransflective
Display Colors16.7M16.7M16.7M16.7M16.7M16.7M16.7M16.7M
Interface24 bit RGB I/F24 bit RGB I/F24 bit RGB I/F24 bit RGB I/F24 bit RGB I/F24 bit RGB I/F24 bit RGB I/F24 bit RGB I/F
2
Brightness (cd/m)250200320350300250280180
Contrast Ratio300300300300300400400180
Panel Power
400400400400400400530530
Consumption
B/L Power
150mW200mWTBD200mW200mW400mW390mW3400mW
Consumption
Light SourceLEDLEDLEDLEDLEDLEDLEDLED
Storage Temperature -
30~70-30~70-30~70-30~70-30~70-30~70-30~70-30~70
(°C)
Operation Temperature
-20~70-20~70-20~70-20~70-20~70-20~60-20~60-20~60
(°C)
Active Area (mm)70.08x52.5670.08x52.5670.08x52.5670.08x52.5670.08x52.5687.84x49.7887.84x49.7887.84x49.78
Module Dimensions
76.90x63.90x3.1576.90*63.90x4.2576.90*63.90x4.2576.90x63.90x3.1576.90*63.90x4.2598.3x62.6x3.898.3x62.6x4.8598.3x62.6x4.85
(mm)
Mass ProductionNowNowNowNowNowNowNowNow
RemarksNowNowNow3Q '063Q '06NowNowNow
SpecificationsLTE430WQ-F07LTE480WQ-F01LTP500WV-F03LTE700WQ-F05LTP700WV-F01LTP700WV-F02LTA120W1-T02
7.0 7.0 12.0 Display Size (inch)4.30 4.80 5.00 7.0
800x480xRGB800x480xRGB800xRGBx480Resolution480x272xRGB480x272xRGB 800xRGB*480480x234xRGB
TMRTMRTransmissiveDisplay ModeTMRTMRTMRTMR
16.7M16.7M262KDisplay Colors16.7M16.7M262K16.7M
24 bit RGB I/F24 bit RGB I/F6 bit RGBInterface24 bit RGB I/F24 bit RGB I/F18 bit RGB I/F24 bit RGB I/F
350350330Brightness (cd/m)350350170450
400400300Contrast Ratio400400250500
TBDTBD9578011030087
TBDTBD6.84W4804808883.8W
LEDCCFLCCFLLight SourceLEDLEDLEDCCFL
-20 ~ 70-20 ~ 70-30~70-30~70-30~70-30~70-20~70
-10 ~ 60-10 ~ 600~70--20~60-20~60-20~60-10~60
152.4x91.44152.4x91.44265.8x149.52Active Area (mm)95.04x53.86105.84x59.98109.2x65.52154.08x86.58
163.2x104x3.4165x104x5.4283.1x171.4x13.0105.3x67.2x3.95114.24x72.88x3.2122.4x79.0x3.75166x100x5.7
3Q '063Q '06NowMass ProductionNowNowNowNow
4Q '064Q '064Q '06RemarksNow4Q '06NowNow
2
Panel Power
Consumption
B/L Power
Consumption
Storage Temperature -
(°C)
Operation Temperature
(°C)
Module Dimensions
(mm)
NOTES:Specifications represent the main model of each product and are subject to change without prior notice.
For More Information:/Products/TFTLCD
SEPTEMBER 2006BR-06-ALL-003
SAMSUNG SEMICONDUCTOR,INC.
9c
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