2023年11月29日发(作者：tcl电视哪个系列是高端)

GenX3 600V

TM

IGBTs

Ultra Low Vsat PT IGBTs for

up to 5kHz switching

IXGA48N60A3V= 600V

IXGP48N60A3

IXGH48N60A3

CES

I

C110

= 48A

V

CE(sat)

≤

1.35V

TO-263 (IXGA)

G

SymbolTest ConditionsMaximum Ratings

VT= 25°C to 150°C 600V

CESJ

VT= 25°C to 150°C, R = 1MΩ 600V

CGRJGE

VContinuousV ±20

GES

VTransientV ±30

GEM

I AT= 25°C 120

C25C

I AT= 110°C 48

C110C

IAT= 25°C, 1ms 300

CMC

A I = 96SSOAV = 15V, T = 125°C, R = 5Ω

WPT= 25°C300

°CT-55 ... +150

°CT150

°CT-55 ... +150

°CTMaximum Lead Temperature for Soldering300

°CT1.6 mm (0.062in.) from Case for 10s260

G

C

E

E

C (Tab)

TO-220 (IXGP)

C (Tab)

TO-247 (IXGH)

CMGEVJG

(RBSOA) Clamped Inductive Load V V

CECES

≤

CC

J

JM

stg

L

SOLD

FMounting Force (TO-263) 10..65 / 2.2..14.6 N/lb.

C

MMounting Torque (TO-220 & TO-247) 1.13 / 10 Nm/.

d

WeightTO-263 2.5 g

G

C

E

C (Tab)

G = GateC = Collector

E = EmitterTab = Collector

TO-2203.0 g

TO-2476.0 g

Features

z

z

z

z

Optimized for Low Conduction Losses

Square RBSOA

High Current Handling Capability

International Standard Packages

Advantages

z

Symbol Test Conditions Characteristic Values

(T = 25°C unless otherwise specified) Min. Typ. Max.

J

BV I = 250μA, V = 0V 600 V

CESCGE

V I = 250μA, V = V 3.0 5.5 V

GE(th)CCEGE

I V = V, V = 0V 25 μA

CESCECESGE

I V= 0V, V = ± 20V ±100 nA

GESCE GE

V I = 32A, V = 15V, Note 1 1.18 1.35 V

CE(sat)CGE

T = 125°C 250 μA

J

z

High Power Density

Low Gate Drive Requirement

Applications

z

z

z

z

z

z

z

z

z

Power Inverters

UPS

Motor Drives

SMPS

PFC Circuits

Battery Chargers

Welding Machines

Lamp Ballasts

Inrush Current Protection Circuits

© 2012 IXYS CORPORATION, All Rights ReservedDS99581D(03/12)

/

IXGA48N60A3 IXGP48N60A3

IXGH48N60A3

SymbolTest Conditions Characteristic Values

(T = 25°C unless otherwise specified) Min. Typ. Max.

J

TO-247 Outline

S I= 32A, V = 10V, Note 130 48

pF 3190

pF V = 25V, V = 0V, f = 1MHz 175

pFC 43

nCQ 110

nC I= 32A, V = 15V, V = 0.5 • V 21

nCQ 42

nst 25

nst 30

mJE 0.95

nst 334

ns 224

nst 24

nst 30

mJE 1.97

nst 545

nst 380

mJE 5.6

1 = Gate

2 = Collector

3 = Emitter

g

fsC CE

C

ies

C

oesCEGE

res

g

Q

geC GECECES

gc

d(on)

ri

on

d(off)

t

fi

E 2.9 mJ

off

d(on)

ri

on

d(off)

fi

off

R 0.42 °C/W

thJC

Inductive Load, T = 25°C

J

I = 32A, V = 15V

CGE

V = 480V, R = 5Ω

CEG

Note 2

Inductive Load, T

J

= 125°C

I = 32A, V = 15V

CGE

V = 480V, R = 5Ω

CEG

Note 2

R TO-220 0.50 °C/W

thCK

TO-247 0.21 °C/W

TO-220 Outline

Notes:

1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

2. Switching times & energy losses may increase for higher V(clamp), T or R.

CEJG

TO-263 Outline

Pins:1 - Gate2 - Collector

3 - Emitter

1 = Gate

2 = Collector

3 = Emitter

4 = Collector

IXYS Reserves the Rght to Change Limits, Test Conditions and Dimensions.

IXYS MOSFETs and IGBTs are covered4,835,5924,931,8445,049,9615,237,4816,162,6656,404,065 B16,683,3446,727,5857,005,734 B2 7,157,338B2

by one or more of the following U.S. patents:4,850,0725,017,5085,063,3075,381,0256,259,123 B16,534,3436,710,405 B26,759,6927,063,975 B2

4,881,1065,034,7965,187,1175,486,7156,306,728 B16,583,5056,710,4636,771,478 B27,071,537

/

IXGA48N60A3 IXGP48N60A3

IXGH48N60A3

Fig. 1. Output Characteristics @ T = 25ºCFig. 2. Extended Output Characteristics @ T = 25ºC

JJ

70

60

50

40

30

20

10

0

0.00.20.40.60.81.01.21.41.61.8

7V

9V

V= 15V

GE

13V

11V

300

V= 15V

GE

13V

11V

240

I

C

-

A

m

p

e

r

e

s

I

C

-

A

m

p

e

r

e

s

180

9V

120

60

7V

0

02468101214

V - Volts

CE

V - Volts

CE

Fig. 3. Output Characteristics @ T = 125ºC

J

70

60

50

V= 15V

GE

13V

11V

1.4

1.3

V= 15V

GE

Fig. 4. Dependence of Von

CE(sat)

Junction Temperature

I = 64A

C

V

C

E

(

s

a

t

)

-

N

o

r

m

a

l

i

z

e

d

1.2

1.1

I = 32A

C

1.0

0.9

0.8

0.7

I = 16A

C

I

C

-

A

m

p

e

r

e

s

9V

40

30

20

10

0

0.00.20.40.60.81.01.21.41.61.8

7V

-50-250255075100125150

V - VoltsT - Degrees Centigrade

CEJ

Fig. 5. Collector-to-Emitter Voltage

vs. Gate-to-Emitter Voltage

2.8

T = 25ºC

J

2.4

I = 64A

C

32A

16A

200

IXGA48N60A3 IXGP48N60A3

IXGH48N60A3

Fig. 7. Transconductance

70

60

50

16

14

12

10

8

6

4

2

00

0102030405060708090100

020406080100120

V= 300V

CE

I

C

= 32A

I = 10mA

G

Fig. 8. Gate Charge

T= - 40ºC

J

25ºC

125ºC

g

f

s

-

S

i

e

m

e

n

s

40

30

20

10

I - AmperesQ - NanoCoulombs

CG

V

G

E

-

V

o

l

t

s

Fig. 9. Capacitance

10,000

100

90

Fig. 10. Reverse-Bias Safe Operating Area

C

a

p

a

c

i

t

a

n

c

e

-

P

i

c

o

F

a

r

a

d

s

C

ies

80

70

I

C

-

A

m

p

e

r

e

s

1,000

60

50

40

30

IXGA48N60A3 IXGP48N60A3

IXGH48N60A3

Fig. 12. Inductive Switching Energy Loss vs.

Gate Resistance

14

I = 64A

C

12

10

84

63

42

21

00

1012141618202224262830

E E

offon

- - - -

T = 125ºC , V = 15V

JGE

V

CE

= 480V

I = 32A

C

6

5

115

E E

offon

- - - -

R = 5ΩV = 15V

GGE

,

V = 480V

CE

7

136

Fig. 13. Inductive Switching Energy Loss vs.

Collector Current

E

o

f

f

-

M

i

l

l

i

J

o

u

l

e

s

E

on

- MilliJoules

E

o

f

f

-

M

i

l

l

i

J

o

u

l

e

s

94

E

on

- MilliJoules

73

52

T = 125ºC

J

I = 16A

C

31

T = 25ºC

J

10

1520253035404550556065

R - Ohms

G

I - Amperes

C

Fig. 14. Inductive Switching Energy Loss vs.

Junction Temperature

136

12

115

10

E E

offon

- - - -

R = 5ΩV = 15V

GGE

,

V = 480V

CE

I = 64A

C

49

520850

500800

480750

Fig. 15. Inductive Turn-off Switching Times vs.

Gate Resistance

tt

)

f id(off

- - - -

T = 125ºC, V = 15V

JGE

V = 480V

CE

I = 64A

C

t

d(off)

- Nanoseconds

E

o

f

f

-

M

i

l

l

i

J

o

u

l

e

s

8

73

6

52

4

31

2

10

2535455565758595105115125

I = 16A

C

I = 32A

C

t

f

i

-

N

a

n

o

s

e

c

o

n

d

s

E

on

- MilliJoules

460700

440650

420600

400550

380500

16A

32A

16A

32A

64A

450360

400340

036912151821242730

T - Degrees Centigrade

J

R - Ohms

G

Fig. 16. Inductive Turn-off Switching Times vs.

Collector Current

500650

450600

400550

350500

T = 125ºC

J

480650

440600

400550

360500

320450

280400

240350

200300

2512535455565758595105115

Fig. 17. Inductive Turn-off Switching Times vs.

Junction Temperature

tt

f id(off)

- - - -

R = 5Ω, V = 15V

GGE

V

CE

= 480V

I = 64A, 32A, 16A

C

t

d(off)

- Nanoseconds

t

f

i

-

N

a

n

o

s

e

IXGA48N60A3 IXGP48N60A3

IXGH48N60A3

Fig. 18. Inductive Turn-on Switching Times vs.

Gate Resistance

10056

9052

8048

7028

6027

Fig. 19. Inductive Turn-on Switching Times vs.

Collector Current

2650

T = 25ºC

J

2540

2430

2320

T = 125ºC

J

1022

021

1520253035404550556065

tt

r id(on)

- - - -

T = 125ºC, V = 15V

JGE

V = 480V

CE

4470

I = 32A

C

4060

3650

3240

25ºC < T < 125ºC

J

t

d(on)

- Nanoseconds

t

r

i

-

N

a

n

o

s

e

c

o

n

d

s

3028

2024

1012141618202224262830

I = 64A

C

t

r

-

N

a

n

o

s

e

c

o

n

d

s

t

d(on)

- Nanoseconds

tt

r id(on)

- - - -

R = 5, V = 15V

GGE

Ω

V = 480V

CE

I = 16A

C

R - Ohms

G

I - Amperes

C

Fig. 20. Inductive Turn-on Switching Times vs.

Junction Temperature

8028

I = 64A

C

7027

6026

5025

4024

I = 32A

C

3023

2022

1021

2535455565758595105115125

I = 16A

C

t

r

i

-

N

a

n

o

s

e

c

o

n

d

s

tt

r id(on)

- - - -

R = 5, V = 15V

GGE

Ω

V = 480V

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