2023年6月26日发(作者：)

元器件交易网4407AP-Channel Enhancement Mode Field Effect TransistorGeneral DescriptionThe AO4407A uses advanced trench technology to

provide excellent RDS(ON), and ultra-low low gate charge

with a 25V gate rating. This device is suitable for use as

a load switch or in PWM applications. Standard Product

AO4407A is Pb-free (meets ROHS & Sony 259

specifications).

FeaturesVDS = -30VID = -12A (VGS = -10V)RDS(ON) < 11mΩ (VGS = -20V)RDS(ON) < 13mΩ (VGS = -10V)RDS(ON) < 38mΩ (VGS = -10V) UIS TESTED!RG, CISS, COSS, CRSS TESTED!SOIC-8Top ViewSSSGDDDDG

D

S

Absolute Maximum Ratings TA=25°C unless otherwise notedParameterSymbol10 SecSteady StateVDSDrain-Source Voltage-30VGS±25Gate-Source VoltageContinuous Drain

Current

A

Pulsed Drain Current

Avalanche Current

GRepetitive avalanche energy L=0.3mH

Power Dissipation

A

TA=25°CTA=70°CGBUnitsVVTA=25°C

TA=70°CIDIDMIAREARPDTJ, TSTG-12-10-60261013.12.0-55 to 150-9.2-7.4AmJ1.71.1W°CJunction and Storage Temperature RangeThermal CharacteristicsParameterMaximum Junction-to-Ambient

AMaximum Junction-to-Ambient

AMaximum Junction-to-Lead

CSymbolt ≤ 10sSteady StateSteady StateRθJARθJLTyp326017Max407524Units°C/W°C/W°C/WAlpha & Omega Semiconductor, 元器件交易网4407AElectrical Characteristics (TJ=25°C unless otherwise noted)ParameterSymbolSTATIC PARAMETERSBVDSSDrain-Source Breakdown VoltageIDSSIGSSVGS(th)ID(ON)Zero Gate Voltage Drain CurrentGate-Body leakage currentGate Threshold VoltageOn state drain currentConditionsID

= -250µA, VGS

= 0V

VDS

= -30V, VGS

= 0V

TJ

= 55°CVDS

= 0V, VGS

= ±25VVDS

= VGS

ID

= -250µAVGS

= -10V, VDS

= -5VVGS

= -20V, ID

= -12A

RDS(ON)Static Drain-Source On-ResistanceTJ=125°CVGS

= -10V, ID

= -12A

VGS

= -5V, ID

= -10A

gFSVSDISForward TransconductanceVDS

= -5V, ID

= -10AIS

= -1A,VGS

= 0VDiode Forward VoltageMaximum Body-Diode Continuous Current-1.7-608.511.5102721-0.7-1-32060VGS=0V, VDS=-15V, f=1MHzVGS=0V, VDS=0V, f=1MHz3702952.430VGS=-10V, VDS=-15V, ID=-12A4.61011VGS=-10V, VDS=-15V, RL=1.25Ω,

RGEN=3ΩIF=-12A, dI/dt=100A/µs9.424123022403.63926SVApFpFpFΩnCnCnCnsnsnsnsnsnCmΩ-2.3Min-30-10-50±100-3TypMaxUnitsVµAnAVADYNAMIC PARAMETERSCissInput CapacitanceCossOutput CapacitanceCrssRgReverse Transfer CapacitanceGate resistanceSWITCHING PARAMETERSQg

Total Gate ChargeQgsGate Source ChargeQgdtD(on)trtD(off)tftrrQrrGate Drain ChargeTurn-On DelayTimeTurn-On Rise TimeTurn-Off DelayTimeTurn-Off Fall TimeBody Diode Reverse Recovery TimeBody Diode Reverse Recovery ChargeIF=-12A, dI/dt=100A/µsA: The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A

= 25°C. The

value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance

rating.B: Repetitive rating, pulse width limited by junction temperature.C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.D. The static characteristics in Figures 1 to 6 are obtained using < 300µs pulses, duty cycle 0.5% max.E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA

curve provides a single pulse rating.

F. The current rating is based on the t ≤ 10s thermal resistance rating.G. EAR and IAR ratings are based on low frequency and duty cycles to keep Tj=3: Jan 2008THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINGOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT & Omega Semiconductor, 元器件交易网4407ATYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS80-10V-6V60-5V)A(

-4.5VD40I--4V20VGS= -3.5V0012345-VDS (Volts)Figure 1: On-Region Characteristics40VGS=-5V30)Ωm(

)N20(OSDRVGS=-10V10VGS=-20V0048I12F=-6.5A, dI/dt=100A/1620-ID (A)Figure 3: On-Resistance vs. Drain Current and

Gate Voltage30ID=-12A25)Ωm20(

)N125°CTHIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

(OSD15COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINGR25°COUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,10FUNCTIONS AND RELIABILITY WITHOUT NOTICE.5345678910-VGS (Volts)Figure 5: On-Resistance vs. Gate-Source VoltageAlpha & Omega Semiconductor, Ltd.80VDS= -5V60D40125°C2025°C000.511.522.533.544.55-VGS(Volts)Figure 2: Transfer Characteristics1.6VGS=-20VID=-12A1.4VGS=-10VID=-12A1.2V1.0GS=-5VID=-10A0.85150175Temperature (°C)Figure 4: On-Resistance vs. Junction

Temperature1E+011E+001E-01125°C1E-02S1E-0325°C1E-041E-051E-060.00.20.40.60.81.01.2-VSD (Volts)Figure 6: Body-Diode -I(A)Normalized

On-Resistanceµs-I

(A)元器件交易网4407ATYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS108-VGS

(Volts)6420Qg (nC)Figure 7: Gate-Charge CharacteristicsVDS=-15VID=-12A30002500CissCapacitance

(pF)200Crss0-VDS (Volts)Figure 8: Capacitance CharacteristicsCoss10010µs10-ID

(Amps)100µs1000TJ(Max)=150°CTA=25°C1RDS(ON)limited10ms100msPower

(W)1ms1000.1TJ(Max)=150°CTA=25°C1010sDC10.010.1IF=-6.5A, dI/dt=100A/µs10100-VDS (Volts)10.00001Figure 9: Maximum Forward Biased Safe

Operating Area (Note E)0.1101000Pulse Width (s)Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note E)0.00110ZθJA

Normalized

Transient

Thermal

Resistance1D=Ton/TTJ,PK=TA+PDM.ZθJA.RθJARθJA=75°C/WIn descending orderD=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse0.1THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

PDCOMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINGOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,0.01TonFUNCTIONS AND RELIABILITY WITHOUT e Pulse0.0010.000010.00010.0010.010.Pulse Width (s)Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)Alpha & Omega Semiconductor,