2023年6月26日发(作者：)

BVDSS

80V

PTP08N08N

80V N-Channel MOSFET

General Features









Proprietary New Trench Technology

RDS(ON),typ.=5.6 mΩ@VGS=10V

Low Gate Charge Minimize Switching Loss

Fast Recovery Body Diode

RDS(ON),typ.

5.6mΩ

ID[2]

90A

Applications

 High efficiency DC/DC Converters

 Synchronous Rectification

 UPS Inverter

G

D

S

TO-220

Ordering Information

Part Number

PTP08N08N

Package

TO-220

Brand

Package Not to Scale

TC=25℃ unless otherwise specified

Absolute Maximum Ratings

Symbol

VDSS

VGSS

ID

ID @ Tc =100℃

IDM

EAS

dv/dt

PD

TL

TPAK

TJ& TSTG

Parameter

Drain-to-Source Voltage[1]

Gate-to-Source Voltage

Continuous Drain Current[2]

Continuous Drain Current[3]

Continuous Drain Current @ Tc=100℃[2]

Pulsed Drain Current at VGS=10V[2,4]

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt[3]

Power Dissipation

Derating Factor above 25℃

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10

seconds, Package Body for 10 seconds

Operating and Storage Temperature Range

PTP08N08N

80

±20

90

80

85

270

700

5.0

250

1.67

300

260

-55 to 175

Unit

V

A

mJ

V/ns

W

W/℃

℃

Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device.

Thermal Characteristics

Symbol

RθJC

RθJA

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

PTP08N08N

0.6

℃/W

62

Unit

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Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP. Rev. B.2016

TJ =25℃ unless otherwise specified

PTP08N08N

Electrical Characteristics

OFF Characteristics

Symbol

BVDSS

Parameter

Drain-to-Source Breakdown Voltage

Min.

80

--

IDSS Drain-to-Source Leakage Current

--

--

IGSS Gate-to-Source Leakage Current

-- -- -100

--

--

100

+100

nA

Typ. Max.

--

--

--

5

uA

Unit

V

Test Conditions

VGS=0V, ID=250uA

VDS=80V, VGS=0V

VDS=64V, VGS=0V,

TJ =125℃

VGS=+20V, VDS=0V

VGS=-20V, VDS=0V

ON Characteristics

Symbol

RDS(ON)

VGS(TH)

gfs

Min.

--

2.0

--

5.6

--

150

8.0

4.0

--

TJ =25℃ unless otherwise specified

Parameter

Static Drain-to-Source

On-Resistance

Gate Threshold Voltage

Forward Transconductance

Typ. Max. Unit

mΩ

V

S

Test Conditions

VGS=10V, ID=80A

[5]

VDS=VGS, ID=250uA

VDS=10V,ID=80A

[5]

Dynamic Characteristics

Symbol

Parameter

Ciss

Crss

Coss

RG

Qg

Qgs

Qgd

Input Capacitance

Essentially independent of operating temperature

Min. Typ. Max.

3700

400

460

0.9

72

14

26

Unit Test Conditions

VGS=0V,

VDS=25V,

f=1.0MHZ

f=1.0MHZ

--

--

--

--

--

--

--

Min.

--

--

--

--

--

--

--

nC

Ω

pF

Reverse Transfer Capacitance

Output Capacitance

Gate Series Resistance

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain (Miller) Charge

VDD=40V,

ID=80A, VGS=0 to 10V

Resistive Switching Characteristics

Symbol

Parameter

td(ON)

trise

td(OFF)

tfall

Turn-on Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

27

50

78

42

Essentially independent of operating temperature

Typ. Max. Unit

Test Conditions

--

--

--

--

--

--

--

--

nS

VDD=40V,

ID=40A,

VGS= 10V

RG=10Ω

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Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP. Rev. B.2016

Parameter

Continuous Source Current[2]

Pulsed Source Current[2]

Diode Forward Voltage

Reverse recovery time

Reverse recovery charge

Min

--

--

--

--

--

Typ.

--

--

--

68

20

Max.

90

270

1.2

--

--

Unit

A

V

ns

nC

PTP08N08N

Test Conditions

Integral PN-diode

in

MOSFET

IS=40A, VGS=0V

VGS=0V ,IF=40A,

diF/dt=100A/μs

Source-Drain Body Diode Characteristics

TJ=25℃ unless otherwise specified

Symbol

ISD

ISM

VSD

trr

Qrr

Note:

[1] TJ=+25℃ to +175℃

[2] Silicon limited current only.

[3].Package limited current

[4] Repetitive rating; pulse width limited by maximum junction temperature.

[5] Pulse width≤380µs; duty cycle≤2%.

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Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP. Rev. B.2016

PTP08N08N

Typical Characteristics

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Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP. Rev. B.2016

PTP08N08N

Typical Characteristics(Cont.)

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Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP. Rev. B.2016

PTP08N08N

Typical Characteristics(Cont.)

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Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP. Rev. B.2016

PTP08N08N

Test Circuits and Waveforms

Fig. 1.1 Peak Diode Recovery dv/dt Test Circuit

Fig. 1.2 Peak Diode Recovery dv/dt Waveforms

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Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP. Rev. B.2016

PTP08N08N

Test Circuits and Waveforms

(Cont.)

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PTP08N08N

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