2023年7月25日发(作者:)
MMBD4148 / SE / CC / CAMMBD4148 / SE / CC / CAConnection Diagrams334148334148SE5H2112MARKINGMMBD4148 5HMMBD4148CA D6MMBD4148CC D5MMBD4148SE D414148CC32NC1234148CASOT-231212Small Signal DiodesAbsolute Maximum Ratings*
T = 25°C unless otherwise notedA
Symbol
VRRM
IF(AV)
IFSM
Tstg
TJ
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
Value
100
200
1.0
2.0
-55 to +150
150
Units
V
mA
A
A
°C
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be :1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operationsThermal Characteristics
Symbol
RθJA
Parameter
Thermal Resistance, Junction to Ambient
Value
350
357
Units
mW
°C/W
PD Power Dissipation
Electrical Characteristics
T = 25°C unless otherwise notedA
Symbol Parameter
Test Conditions
IR
= 5.0
µA
IR
= 100
µA
IF
= 10 mA
VR
= 20 V
VR
= 20 V, TA
= 150°C
VR
= 75 V
VR
= 0, f = 1.0 MHz
IF
= 10 mA, VR
= 6.0 V,
IRR
= 1.0 mA, RL
= 100
Ω
Min
75
100
Max
1.0
Units
V
V
V
VR Breakdown Voltage
VF Forward Voltage
IR Reverse Current
CT Total Capacitance
trr
Reverse Recovery Time
nA
25
50
µA
5.0
µA
4.0 pF
4.0 ns
2001 Fairchild Semiconductor CorporationMMBD4148, Rev. CTRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and isnot intended to be an exhaustive list of all such ™Bottomless™CoolFET™CROSSVOLT™DenseTrench™DOME™EcoSPARK™E2CMOSTMEnSignaTMFACT™FACT Quiet Series™DISCLAIMERFAST®FASTr™FRFET™GlobalOptoisolator™GTO™HiSeC™ISOPLANAR™LittleFET™MicroFET™MicroPak™MICROWIRE™OPTOLOGIC™OPTOPLANAR™PACMAN™POP™Power247™PowerTrench®QFET™QS™QT Optoelectronics™Quiet Series™SILENT SWITCHER®SMART START™STAR*POWER™Stealth™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic™TruTranslation™UHC™UltraFET®VCX™STAR*POWER is used under licenseFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHERNOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILDDOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCTOR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENTRIGHTS, NOR THE RIGHTS OF SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR used herein:1. Life support devices or systems are devices or2. A critical component is any component of a lifesystems which, (a) are intended for surgical implant intosupport device or system whose failure to perform canthe body, or (b) support or sustain life, or (c) whosebe reasonably expected to cause the failure of the lifefailure to perform when properly used in accordancesupport device or system, or to affect its safety orwith instructions for use provided in the labeling, can ably expected to result in significant injury to T STATUS DEFINITIONSDefinition of TermsDatasheet IdentificationAdvance InformationProduct StatusFormative orIn DesignDefinitionThis datasheet contains the design specifications forproduct development. Specifications may change inany manner without datasheet contains preliminary data, andsupplementary data will be published at a later ild Semiconductor reserves the right to makechanges at any time without notice in order to datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve inaryFirst ProductionNo Identification NeededFull ProductionObsoleteNot In ProductionThis datasheet contains specifications on a productthat has been discontinued by Fairchild datasheet is printed for reference information . H4
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