2023年7月9日发(作者：)

AP5N04MI

40V N-Channel Enhancement Mode MOSFET

DescriptionThe AP5N04MI uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a

Battery protection or in other Switching application.

General Features

VDS = 40V ID =5.0A

RDS(ON) < 37mΩ @ VGS=10V

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

AP5N04MI

Pack

SOT23-3

Marking

MD4-5A

Qty(PCS)

3000

Absolute Maximum Ratings (TA=25℃ unless otherwise noted)

Symbol

VDS

VGS

ID@TA=25℃

ID@TA=70℃

IDM

PD@TA=25℃

TSTG

TJ

RθJA

RθJC

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current, VGS @ 10V1

Continuous Drain Current, VGS @ 10V1

Pulsed Drain Current2

Total Power Dissipation3

Storage Temperature Range

Operating Junction Temperature Range

Thermal Resistance Junction-ambient

1

Thermal Resistance Junction-Case1

Rating

40

±20

5.0

3.5

14

1

-55 to 150

-55 to 150

125

80

Units

V

V

A

A

A

W

℃

℃

℃/W

℃/W

1

AP5N04MI Rve3.8 臺灣永源微電子科技有限公司

AP5N04MI

Typ.

---

0.032

30

40

1.5

-4.5

---

---

---

8

2.4

5

1.54

1.84

7.8

2.1

29

2.1

452

51

38

---

---

---

Max.

---

---

37

50

2.5

---

1

5

±100

---

4.8

---

---

---

---

---

---

---

---

---

---

4.5

14

1.2

A

A

V

pF

ns

nC

mΩ

V

mV/℃

uA

nA

S

Unit

V

V/℃

40V N-Channel Enhancement Mode MOSFET

Electrical Characteristics

(TA=25℃ unless otherwise noted)

Symbol

BVDSS

Parameter

Drain-Source Breakdown Voltage

Conditions

VGS=0V , ID=250uA

Reference to 25℃ , ID=1mA

VGS=10V , ID=4A

RDS(ON)

VGS(th)

△VGS(th)

IDSS

IGSS

gfs

Rg

Qg

Qgs

Qgd

Td(on)

Tr

Td(off)

Tf

Ciss

Coss

Crss

IS

ISM

VSD

Static Drain-Source On-Resistance2

Gate Threshold Voltage

VGS(th)

Temperature Coefficient

Drain-Source Leakage Current

Gate-Source Leakage Current

Forward Transconductance

Gate Resistance

Total Gate Charge (4.5V)

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Continuous Source Current1,4

Pulsed Source Current2,4

Diode Forward Voltage2

VG=VD=0V , Force Current

VDS=15V , VGS=0V , f=1MHz

VDD=15V , VGS=10V ,

RG=3.3

ID=1A

VDS=15V , VGS=4.5V , ID=3A

VGS=4.5V , ID=3A

VGS=VDS , ID =250uA

VDS=32V , VGS=0V , TJ=25℃

VDS=32V , VGS=0V , TJ=55℃

VGS=±20V , VDS=0V

VDS=5V , ID=4A

VDS=0V , VGS=0V , f=1MHz

Min.

40

---

---

---

1.0

---

---

---

---

---

---

---

---

---

---

---

---

---

---

---

---

---

---

---

△BVDSS/△TJ

BVDSS Temperature Coefficient

Ω

VGS=0V , IS=1A , TJ=25℃

Note :

1

.The data tested by surface mounted on a 1 inch2

FR-4 board with 2OZ copper.

data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3

.The power dissipation is limited by 150℃ junction temperature

data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

AP5N04MI Rve3.8 臺灣永源微電子科技有限公司

2

AP5N04MI

40V N-Channel Enhancement Mode MOSFET

Typical Characteristics

15

12VGS=10V)A

(

VGS=7Vtner

VGS=5VruC

9

nia

VGS=4.5VVGS=3VrD

6ID

3

0

0V0.511.5DS , Drain-to-Source Voltage (V)2

Fig.1 Typical Output Characteristics

8

)

At(n

6erru

C

e

4cruo

S

TJ=150℃TJ=25℃IS

2

00.000.250.500.751.00

VSD , Source-to-Drain Voltage (V)

Fig.3 Forward Characteristics Of Reverse

1.8

)

V

()

1.4thS(G

Vde

1zila

mro

N

0.6

0.2-5

TJ ,Junction Temperature (℃ )

Fig.5 Normalized VGS(th) vs. TJ

AP5N04MI Rve3.8

50ID=4A)45Ωm

(NSODR403546810VGS (V)

Fig.2 On-Resistance vs. Gate-Source

10VDS=15V)VID=3A

(eg7.5taloV

ecr5uoS

to

te2.5

Ga

SGV002Q.557.5G , Total Gate Char10

Fig.4 Gate-Charge Characteristics

1.8encat1.4isesR

nO

d1.0eizlamorN0.60.2-5TJ , Junction Temperature (℃)

Fig.6 Normalized R3DSON vs. TJ

臺灣永源微電子科技有限公司

AP5N04MI

40V N-Channel Enhancement Mode MOSFET

1000100.00F=1.0MHz

Ciss10.00

1001.00

Coss

0.10Crss

TA=25℃

10Single Pulse0.01

0.1110VDS , Drain to Source Voltage (V)VDS (V)

Fig.7 Capacitance Fig.8 Safe Operating Area

1DUTY=0.5

0.2

0.10.10.05

0.02

0.010.01

P

T0.001SINGLE PULSET

D = T/T

T = T + Px R

0.0001

0.00010.0010.010.1110100

t , Pulse Width (s)

Fig.9 Normalized Maximum Transient Thermal Impedance

VDS

90%

10%

VGSTd(on)TrTd(off)Tf

TonToff

Capacitance

(pF)ID

(A)100us10ms100ms1sDC100

Normalized

Thermal

Response

(R

θJA)DMONONJpeakCDM θJC1000

4

Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform

AP5N04MI Rve3.8 臺灣永源微電子科技有限公司

AP5N04MI

40V N-Channel Enhancement Mode MOSFET

Package Mechanical Data:SOT23-3L

Symbol

A

A1

A2

b

c

D

E1

E

e

e1

L

θ

Dimensions In Millimeters

Min. Max.

1.050 1.250

0.000 0.100

1.050 1.150

0.300 0.500

0.100 0.200

2.820 3.020

1.500 1.700

2.650 2.950

0.950(BSC)

1.800 2.000

0.300 0.600

0° 8°

Dimensions In Inches

Min. Max.

0.041 0.049

0.000 0.004

0.041 0.045

0.012 0.020

0.004 0.008

0.111 0.119

0.059 0.067

0.104 0.116

0.037(BSC)

0.071 0.079

0.012 0.024

0° 8°

AP5N04MI Rve3.8 臺灣永源微電子科技有限公司

5

AP5N04MI

40V N-Channel Enhancement Mode MOSFET

Attention

1,Any and all APM Microelectronics products described or contained herein do not have specifications

that can handle applications that require extremely high levels of reliability, such as life support systems,

aircraft's control systems, or other applications whose failure can be reasonably expected to result in

serious physical and/or material damage. Consult with your APM Microelectronics representative nearest

you before using any APM Microelectronics products described or contained herein in such applications.

2,APM Microelectronics assumes no responsibility for equipment failures that result from using products

at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all APM Microelectronics

products described or contained herein.

3, Specifications of any and all APM Microelectronics products described or contained here instipulate the

performance, characteristics, and functions of the described products in the independent state, and are

not guarantees of the performance, characteristics, and functions of the described products as mounted

in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an

independent device, the customer should always evaluate and test devices mounted in the customer’s

products or equipment.

4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products.

However, any and all semiconductor products fail with some probability. It is possible that these

probabilistic failures could give rise to accidents or events that could endanger human lives that could

give rise to smoke or fire, or that could cause damage to other property. When designing equipment,

adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include

but are not limited to protective circuits and error prevention circuits for safe design, redundant

design,and structural design.

5,In the event that any or all APM Microelectronics products(including technical data, services) described

or contained herein are controlled under any of applicable local export control laws and regulations, such

products must not be exported without obtaining the export license from the authorities concerned in

accordance with the above law.

6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system, or

otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD.

7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not

guaranteed for volume production. APM Microelectronics believes information herein is accurate and

reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual

property rights or other rights of third parties.

8, Any and all information described or contained herein are subject to change without notice due to

product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for

the APM Microelectronics product that you Intend to use.

AP5N04MI Rve3.8 臺灣永源微電子科技有限公司

6