AP5N04MI5A40VSOT23-3

AP5N04MI5A40VSOT23-3

2023年7月9日发(作者:)

AP5N04MI5A40VSOT23-3The AP5N04MI uses advanced trench technologyto provide excellent R DS(ON), low gate charge andoperation with gate voltages as low as 4.5V. Thisdevice is suitable for use as aBattery protection or in other Switching l FeaturesV DS = 40V I D =5.0AR DS(ON) < 37mΩ @ V GS=10VApplicationBattery protectionLoad switchUninterruptible power supplyPackage Marking and Ordering InformationProduct ID Pack Marking Qty(PCS)AP5N04MI SOT23-3MD4-5A3000Absolute Maximum Ratings (TA=25℃ unless otherwise noted)Symbol Parameter Rating UnitsV DS Drain-Source Voltage40 VV GS Gate-Sou r ce Voltage ±20VI D@T A=25℃ContinuousDrainCurrent,************I D@T A=70℃ContinuousDrainCurrent,************I DM Pulsed Drain Current214 AP D@T A=25℃Total Power Dissipation3 1 W T STG Storage Temperature Range -55 to 150 ℃T J Operating Junction Temperature Range -55 to 150 ℃RθJA Thermal Resistance Junction-ambient 1125 ℃/WRθJC Thermal Resistance Junction-Case180 ℃/W1Electrical Characteristics (TA=25℃ unless otherwise noted)Symbol Parameter Conditions Min. Typ. Max. Unit BV DSS Drain-Source Breakdown Voltage V GS=0V , I D=250uA 40 --- ---V △BV DSS/△T J BVDSS Temperature Coefficient Reference to 25℃, I D=1mA --- 0.032 --- V/℃R DS(ON)Static Drain-Source On-Resistance2V GS=10V , I D=4A --- 30 37mΩV GS=4.5V , I D=3A --- 40 50V GS(th)Gate Threshold VoltageV GS=V DS , I D =250uA 1.0 1.5 2.5 V△V GS(th)V GS(th) Temperature Coefficient --- -4.5 --- mV/℃I DSS Drain-Source Leakage Current V DS=32V , V GS=0V , T J=25℃--- --- 1uA V DS=32V , V GS=0V , T J=55℃--- --- 5I GSS Gate-Source Leakage Current V GS=±20V , V DS=0V --- --- ±100 nA gfs Forward Transconductance V DS=5V , ID=4A --- 8 --- S R g Gate Resistance V DS=0V , V GS=0V , f=1MHz --- 2.4 4.8 ΩQ g Total Gate Charge (4.5V)V DS=15V , V GS=4.5V , I D=3A --- 5 ---nCQ gs Gate-Source Charge --- 1.54 --- Q gd Gate-Drain Charge --- 1.84 ---T d(on)Turn-On Delay TimeV DD=15V , V GS=10V ,R G=3.3I D=1A --- 7.8 ---nsT r Rise Time --- 2.1 --- T d(off)Turn-Off Delay Time --- 29 --- T f Fall Time --- 2.1 ---C iss Input CapacitanceV DS=15V , V GS=0V , f=1MHz --- 452 ---pFC oss Output Capacitance --- 51 ---C rss Reverse Transfer Capacitance --- 38 ---I S Continuous Source Current1,4VG=V D=0V , Force Current--- --- 4.5 AI SM Pulsed Source Current2,4--- --- 14 AV SD Diode Forward Voltage2V GS=0V , I S=1A , T J=25℃--- --- 1.2 data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% power dissipation is limited by 150℃ junction data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.23Typical Characteristics Fig.1 Typical Output Characteristics Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-ChargeCharacteristicsFig.5 Normalized V vs. TVFig.8 Safe Operating AreaFig.9 Normalized Maximum Transient Thermal ImpedanceFig.7 CapacitanceFig.10 Switching Time Waveform Fig.11 Gate Charge Waveform45Package Mechanical Data:SOT23-3LSymbol Dimensions In Millimeters Dimensions In InchesMin. Max. Min. Max. A 1.050 1.250 0.041 0.049 A1 0.000 0.100 0.000 0.004 A2 1.050 1.150 0.041 0.045 b 0.300 0.500 0.0120.020 c 0.100 0.200 0.004 0.008 D 2.820 3.020 0.111 0.119 E1 1.500 1.700 0.059 0.067 E 2.650 2.9500.104 0.116e 0.950(BSC) 0.037(BSC) e1 1.800 2.000 0.071 0.079 L 0.300 0.600 0.012 0.024 θ0° 8° 0° 8°Attention1,Any and all APM Microelectronics products described or contained herein do not have specificationsthat can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's controlsystems, or other applications whose failure can be reasonably expected to result inserious physical and/or material damage. Consult with your APM Microelectronics representative nearestyou before using any APM Microelectronics products described or contained herein in such applications.2,APM Microelectronics assumes no responsibility for equipment failures that result from using productsat values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or otherparameters) listed in products specifications of any and all APM Microelectronicsproducts described or contained herein.3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance,characteristics, and functions of the describ ed products in the independent state, and arenot guarantees of the performance, characteristics, and functions of the described products as mountedin the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,the customer should always evaluate and test devices mounted in the customer’s products or equipment.4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any andall semiconductor products fail with some probability. It is possible that theseprobabilistic failures could give rise to accidents or events that could endanger human lives that couldgive rise to smoke or fire, or that could cause damage to other property. When designing equipment,adopt safety measures so that these kinds of accidents or events cannot occur. Such measures includebut are not limited to protective circuits and error prevention circuits for safe design, redundantdesign,and structural design.5,In the event that any or all APM Microelectronics products(including technical data, services) describedor contained herein are controlled under any of applicable local export control laws and regulations, such products must notbe exported without obtaining the export license from the authorities concerned in accordance with the above law.6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical,including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior writtenpermission of APM Microelectronics Semiconductor CO., LTD.7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volumeproduction. APM Microelectronics believes information herein is accurate andreliable, but no guarantees are made or implied regarding its use or any infringements of intellectualproperty rights or other rights of third parties.8, Any and all information described or contained herein are subject to change without notice due toproduct/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" forthe APM Microelectronics product that you Intend to use.6

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