2023年6月26日发(作者：)

元器件交易网140T/141T/142TTIP140T/141T/142TMonolithic Construction With Built In Base-Emitter Shunt Resistors

•High DC Current Gain : hFE

= 1000 @ VCE

= 4V, IC = 5A (Min.)•Industrial Use•Complement to TIP145T/146T/147T1TO-220NPN Epitaxial Silicon Darlington TransistorAbsolute Maximum Ratings

TC=25°C unless otherwise notedSymbol VCBOParameter Collector-Base Voltage : TIP140T : TIP141T : TIP142T Collector-Emitter Voltage : TIP140T : TIP141T : TIP142T Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissipation (TC=25°C) Junction Temperature Storage TemperatureValue 60 80100 60 80100 5 10 150.5 80150- 65 ~ 150UnitsVVVVVVVAAAW°C° tor rEquivalent CircuitCB VCEO VEBO IC ICP IB PC TJ TSTGR1R2ER1≅8kΩR2≅0.12kΩElectrical Characteristics

TC=25°C unless otherwise notedSymbol VCEO(sus)Parameter Collector-Emitter Sustaining Voltage

: TIP140T: TIP141T: TIP142T Collector Cut-off Current

: TIP140T: TIP141T: TIP142T Collector Cut-off Current

: TIP140T: TIP141T: TIP142T Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Delay Time Rise Time Storage Time Fall TimeTest Condition

IC

= 30mA, IB

= 0Min. 60 80 100 2 2 2 1 1 1 21000 500

233.530.150.55 2.5 2.5VVVVµsµsµsµsRev. B1, December VVmAmAmAmAmAmAmAmA

ICEO VCE

= 30V, IB

= 0 VCE

= 40V, IB

= 0 VCE

= 50V, IB

= 0 VCB

= 60V, IE

= 0 VCB

= 80V, IE

= 0 VCB

= 100V, IE

= 0 VBE

= 5V, IC

= 0 VCE

= 4V, IC

= 5A VCE

=4V, IC

= 10A IC

= 5A, IB

= 10mA IC

= 10A, IB

= 40mA IC

= 10A, IB

= 40mA VCE

= 4V, IC

= 10A VCC

= 30V, IC

= 5A IB1

= 20mA

IB2 = -20mA RL = 6Ω ICBO

IEBO

hFE VCE(sat) VBE(sat) VBE(on) tD tR tSTG tF©2002 Fairchild Semiconductor Corporation元器件交易网140T/141T/142TTypical Characteristics

109

100kIB = 2000uAIB = 1800uAIB = 1600uAIB = 1400uAuA12000uAIB

=

100IB

=IB = 800uAIB = 600uAIB = 400uA

VCE = 4V10kIC[A],

COLLECTOR

CURRENT876543210hFE,

DC

CURRENT

GAINIB = 200uA1.1110100VCE[V], COLLECTOR-EMITTER VOLTAGEIC[A], COLLECTOR CURRENTFigure 1. Static CharacteristicFigure 2. DC current Gain

1000VBE(sat),

VCE(sat)[V],

SATURATION

VOLTAGE10IC=500IBf=0.1MHzVBE(sat)1VCE(sat)Cob[pF],

CAPACITANCE0.1

0.010.1101000IC[A], COLLECTOR CURRENTVCB[V], COLLECTOR-BASE VOLTAGEFigure 3. Collector-Emitter Saturation Voltage

Base-Emitter Saturation VoltageFigure 4. Collector Output Capacitance

100

100IC[A],

COLLECTOR

CURRENT10PC[W],

POWER

DISSIPATION8060

401TIP140TTIP141TTIP142T200.12550o751VCE[V], COLLECTOR-EMITTER VOLTAGETC[C], CASE TEMPERATUREFigure 5. Safe Operating AreaFigure 6. Power Derating©2002 Fairchild Semiconductor CorporationRev. B1, December 2002

100

1kDC元器件交易网140T/141T/142TPackage DimensionsTO-2209.90

±0.201.30

±0.102.80

±0.104.50

±0.20(8.70)ø3.60

±0.10(1.70)1.30–0.05+0.109.20

±0.20(1.46)13.08

±0.20(1.00)(3.00)15.90

±0.201.27

±0.101.52

±0.100.80

±0.102.54TYP[2.54

±0.20]2.54TYP[2.54

±0.20]10.08

±0.3018.95MAX.(3.70)(45°)0.50–0.05+0.102.40

±0.2010.00

±0.20Dimensions in Millimeters©2002 Fairchild Semiconductor CorporationRev. B1, December 2002元器件交易网DEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and isnot intended to be an exhaustive list of all such ™FACT™ActiveArray™FACT Quiet series™Bottomless™FAST®FASTr™CoolFET™CROSSVOLT™FRFET™GlobalOptoisolator™DOME™EcoSPARK™GTO™2CMOS™EHiSeC™EnSigna™I2C™Across the board. Around the world.™The Power Franchise™Programmable Active Droop™DISCLAIMERImpliedDisconnect™ISOPLANAR™LittleFET™MicroFET™MicroPak™MICROWIRE™MSX™MSXPro™OCX™OCXPro™OPTOLOGIC®OPTOPLANAR™PACMAN™POP™Power247™PowerTrench®QFET™QS™QT Optoelectronics™Quiet Series™RapidConfigure™RapidConnect™SILENT SWITCHER®SMART START™SPM™Stealth™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic™TruTranslation™UHC™UltraFET®VCX™FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANYPRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANYLIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD used herein:1. Life support devices or systems are devices or systemswhich, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to performwhen properly used in accordance with instructions for useprovided in the labeling, can be reasonably expected toresult in significant injury to the user.2. A critical component is any component of a life supportdevice or system whose failure to perform can bereasonably expected to cause the failure of the life supportdevice or system, or to affect its safety or T STATUS DEFINITIONSDefinition of TermsDatasheet IdentificationAdvance InformationProduct StatusFormative or In

DesignFirst ProductionDefinitionThis datasheet contains the design specifications forproduct development. Specifications may change inany manner without datasheet contains preliminary data, andsupplementary data will be published at a later ild Semiconductor reserves the right to makechanges at any time without notice in order to datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve datasheet contains specifications on a productthat has been discontinued by Fairchild datasheet is printed for reference information inaryNo Identification NeededFull ProductionObsoleteNot In Production©2002 Fairchild Semiconductor CorporationRev. I1