2023年6月26日发(作者：)

SS9013SS90131W Output Amplifier of Potable Radios in

Class B Push-pull Operation.••••High total power dissipation. (PT=625mW)High Collector Current. (IC=500mA)Complementary to SS9012Excellent hFE linearity.1TO-921. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings

Ta=25°C unless otherwise noted

SymbolVCBOVCEOVEBOICPCTJTSTGCollector-Base VoltageCollector-Emitter VoltageEmitter-Base VoltageCollector CurrentCollector Power DissipationJunction TemperatureStorage TemperatureParameterRatings40-55 ~ 150UnitsVVVmAmW°C°CElectrical Characteristics

Ta=25°C unless otherwise noted

SymbolBVCBOBVCEOBVEBOICBOIEBOhFE1hFE2VCE

(sat)VBE

(sat)VBE

(on)ParameterCollector-Base Breakdown VoltageCollector-Emitter Breakdown VoltageEmitter-Base Breakdown VoltageCollector Cut-off CurrentEmitter Cut-off CurrentDC Current GainCollector-Emitter Saturation VoltageBase-Emitter Saturation VoltageBase-Emitter On VoltageTest ConditionIC

=100µA, IE

=0IC

=1mA, IB

=0IE

=100µA, IC

=0VCB

=25V, IE

=0VEB

=3V, IC

=0VCE

=1V, IC

=50mAVCE

=1V, IC

=500mAIC

=500mA, IB

=50mAIC

=500mA, IB

=50mAVCE

=1V, IC

=VVnAnAhFE

ClassificationClassificationhFE1

D64 ~ 91E78 ~ 112F96 ~ 135G112 ~ 166H144 ~ 202©2002 Fairchild Semiconductor CorporationRev. A3, May 2002SS9013Typical Characteristics2018

IB = 160µA1000IB = 140µAIB = 120µAIB = 100µAIB = 80µAIB = 60µAIB = 40µAIB = 20µAVCE = 1VIC

[mA],

COLLECTOR

CURRENT20hFE,

DC

CURRENT

GAIN105010000VCE [V], COLLECTOR-EMITTER VOLTAGEIC [mA], COLLECTOR CURRENTFigure 1. Static CharacteristicFigure 2. DC current GainVBE(sat),

VCE(sat)[mV],

SATURATION

VOLTAGE10000fT[MHz],

CURRENT

GAIN

BANDWIDTH

PRODUCTIC = 10 IB1000VCE = 6V1000100VBE (sat)10010VCE (sat)110010000IC [mA], COLLECTOR CURRENTIC [mA], COLLECTOR CURRENTFigure 3. Base-Emitter Saturation VoltageCollector-Emitter Saturation VoltageFigure 4. Current Gain Bandwidth Product©2002 Fairchild Semiconductor CorporationRev. A3, May 2002 SS9013Package DemensionsTO-924.58–0.15+0.250.46

±0.1014.47

±0.404.58

±0.201.27TYP[1.27

±0.20]3.60

±0.201.27TYP[1.27

±0.20]0.38–0.05+0.103.86MAX1.02

±0.100.38–0.05+0.10(R2.29)(0.25)Dimensions in Millimeters©2002 Fairchild Semiconductor CorporationRev. A3, May 2002TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is notintended to be an exhaustive list of all such ™Bottomless™CoolFET™CROSSVOLT™DenseTrench™DOME™EcoSPARK™E2CMOS™EnSigna™FACT™FACT Quiet Series™FAST®FASTr™FRFET™GlobalOptoisolator™GTO™HiSeC™I2C™ISOPLANAR™LittleFET™MicroFET™MicroPak™MICROWIRE™OPTOLOGIC™OPTOPLANAR™PACMAN™POP™Power247™PowerTrench®QFET™QS™QT Optoelectronics™Quiet Series™SLIENT SWITCHER®SMART START™SPM™STAR*POWER™Stealth™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic™TruTranslation™UHC™UltraFET®VCX™STAR*POWER is used under licenseDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANYPRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANYLIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD used herein:1. Life support devices or systems are devices or systemswhich, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to performwhen properly used in accordance with instructions for useprovided in the labeling, can be reasonably expected toresult in significant injury to the user.2. A critical component is any component of a life supportdevice or system whose failure to perform can bereasonably expected to cause the failure of the life supportdevice or system, or to affect its safety or T STATUS DEFINITIONSDefinition of TermsDatasheet IdentificationAdvance InformationProduct StatusFormative or In

DesignFirst ProductionDefinitionThis datasheet contains the design specifications forproduct development. Specifications may change inany manner without datasheet contains preliminary data, andsupplementary data will be published at a later ild Semiconductor reserves the right to makechanges at any time without notice in order to datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve datasheet contains specifications on a productthat has been discontinued by Fairchild datasheet is printed for reference information inaryNo Identification NeededFull ProductionObsoleteNot In Production©2002 Fairchild Semiconductor CorporationRev. H5