2024年4月12日发(作者：)

二维MoS2薄膜的可控制备及其电子

输运特性研究

【摘要】

二维MoS2作为一种新型半导体材料，在电子学和光电子学领

域具有广泛的应用前景。在本文研究中，我们采用化学气相沉

积（CVD）技术在氧化硅基底上制备了高质量的二维MoS2薄膜，

并通过压电传感器进行了表征。通过在不同条件下控制CVD过

程中的温度、气体流量和反应时间等参数，成功地实现了对

MoS2薄膜的可控制备。同时，利用离子束雕刻技术对MoS2薄

膜进行了纳米加工，使其形成了具有排列有序的长条纹的结构，

可作为电极进行电子输运特性研究。

进一步的电子输运实验表明，MoS2薄膜具有半导体特性，并

在室温下呈现出n型导电性。在不同温度和电场的情况下，

MoS2薄膜的电子输运性质表现出明显的变化。通过调控材料

的缺陷和掺杂，成功地实现了对MoS2薄膜电子输运特性的调

控。结果表明，MoS2薄膜在电子学和光电子学器件中具有广

泛的应用前途。

【关键词】

二维MoS2；CVD；可控制备；纳米加工；电子输运特性

【Abstract】

Two-dimensional (2D) MoS2 as a novel semiconductor

material has great potential applications in the

fields of electronics and optoelectronics. In this

study, high-quality 2D MoS2 film was prepared on a

SiO2 substrate by chemical vapor deposition (CVD)

technique and characterized by piezoelectric sensors.

The controllable preparation of MoS2 film was achieved

by controlling the temperature, gas flow rate, and

reaction time in the CVD process under different

conditions. Meanwhile, the MoS2 film was patterned by

ion beam etching, forming a structure with a

longitudinally aligned stripe that was used as an

electrode for the study of electronic transport

characteristics.

Further electronic transport experiments demonstrated

that the MoS2 film exhibited semiconductor properties

and showed an n-type conductivity at room temperature.

The electronic transport properties of MoS2 film

showed significant changes under different

temperatures and electric fields. By controlling the

material defects and doping, the electronic transport

characteristics of MoS2 film were successfully

regulated. The results indicated that MoS2 film had

great potential applications in electronics and

optoelectronics devices.