2023年7月9日发(作者：)

元器件交易网5002NPreferred DeviceSelf−Protected FETwith Temperature and

Current Limit42 V, 2.0 A, Single N−Channel, SOT−223HDPlust devices are an advanced series of power MOSFETswhich utilize ON Semiconductors latest MOSFET technology processto achieve the lowest possible on−resistance per silicon area whileincorporating smart features. Integrated thermal and current limitswork together to provide short circuit protection. The devices featurean integrated Drain−to−Gate Clamp that enables them to withstandhigh energy in the avalanche mode. The Clamp also providesadditional safety margin against unexpected voltage ostatic Discharge (ESD) protection is provided by an integratedGate−to−Source esV(BR)DSS(Clamped)42 V(ON) TYP165 mW @ 10 VID MAX2.0 A**Max current limit value is dependent on input

vervoltageProtectionMPWRGateInputRG••••••••Current LimitationThermal Shutdown with Automatic RestartShort Circuit ProtectionIDSS Specified at Elevated TemperatureAvalanche Energy SpecifiedSlew Rate Control for Low Noise SwitchingOvervoltage Clamped ProtectionPb−Free Packages are AvailableESD ProtectionTemperatureLimitCurrentLimitCurrentSenseSource4123SOT−223CASE 318ESTYLE 3Applications•Lighting•Solenoids•Small MotorsMAXIMUM RATINGS

(TJ = 25°C unless otherwise noted)RatingDrain−to−Source Voltage Internally ClampedDrain−to−Gate Voltage Internally Clamped(RG = 1.0 MW)Gate−to−Source VoltageContinuous Drain CurrentPower Dissipation@ TA = 25°C (Note 1)@ TA = 25°C (Note 2)@ TT = 25°C (Note 3)SymbolVDSSVDGRVGSIDPDValue4242"141.11.78.9−55 to150150UnitVVVWMARKING DIAGRAM1 GATEAYW5002NGG2

DRAIN3

SOURCE4

DRAINInternally LimitedA= Assembly LocationY= YearW= Work Week5002N= Specific Device CodeG= Pb−Free Package(Note: Microdot may be in either location)Operating Junction and Storage TemperatureSingle Pulse Drain−to−Source Avalanche Energy(VDD = 32 V, VG = 5.0 V, IPK = 1.0 A,

L = 300 mH, RG(ext) = 25 W)TJ, TstgEAS°CmJORDERING INFORMATIONSee detailed ordering and shipping information in the packagedimensions section on page 4 of this data red devices are recommended choices for future useand best overall es exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation above the RecommendedOperating Conditions is not implied. Extended exposure to stresses above theRecommended Operating Conditions may affect device reliability.© Semiconductor Components Industries, LLC, 20061April, 2006 − Rev. 7Publication Order Number:NIF5002N/D元器件交易网5002NTHERMAL CHARACTERISTICSCharacteristicJunction−to−Ambient − Steady State (Note 1)Junction−to−Ambient − Steady State (Note 2)Junction−to−Tab − Steady State (Note 3)e−mounted onto min pad FR4 PCB, (2 oz. Cu, 0.06″ thick).e−mounted onto 2″ sq. FR4 board (1″ sq., 1 oz. Cu, 0.06″ thick).e−mounted onto min pad FR4 PCB, (2 oz. Cu, 0.06″ thick).SymbolRqJARqJARqJTValue1147214Unit°C/WELECTRICAL CHARACTERISTICS

(TJ = 25°C unless otherwise noted)ParameterOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage(Note 4)Zero Gate Voltage Drain CurrentV(BR)DSSIDSSIGSSFVGS(th)VGS(th)/TJRDS(on)VGS = 10 V, ID = 1.7 AVGS = 5.0 V, ID = 1.7 AVGS = 5.0 V, ID = 0.5 ASource−Drain Forward On VoltageSWITCHING CHARACTERISTICSTurn−on TimeTurn−off TimeSlew Rate OnSlew−Rate Offtd(on)td(off)dVDS/dtondVDS/dtoffVGS = 10 V, VDD = 12 V,

ID = 2.5 A, RL = 4.7 W,

(10% Vin to 90% ID)RL = 4.7 W, Vin = 0 to 10 V,

VDD = 12 V, 70% to 50%RL = 4.7 W, Vin = 0 to 10 V,

VDD = 12 V, 50% to 70%20651.20.530100V/msmsVSDTJ = 25°CTJ = 150°CTJ = 25°CTJ = 150°CTJ = 25°CTJ = 150°CVGS = 0 V, ID = 10 mAVGS = 0 V, VDS = 32 VTJ = 25°CTJ = 150°CTJ = 25°CTJ = 150°C424046450.251.1501.31.84.01903501.055554.0201002.26.0230460VmAV−mV/°CmWmAVSymbolTest ConditionMinTypMaxUnitGate Input CurrentON CHARACTERISTICS (Note 4)Gate Threshold VoltageGate Threshold Temperature CoefficientStatic Drain−to−Source On−ResistanceVDS = 0 V, VGS = 5.0 VVGS = VDS, ID = 150 mAVGS = 0 V, IS = 7.0 ASELF PROTECTION CHARACTERISTICS

(TJ = 25°C unless otherwise noted) (Note 5)Current LimitILIMVDS = 10 V, VGS = 5.0 VVDS = 10 V, VGS = 10 VTemperature Limit (Turn−off)Temperature Limit (Circuit Reset)Temperature Limit (Turn−off)Temperature Limit (Circuit Reset)TLIM(off)TLIM(on)TLIM(off)TLIM(on)ESDVGS = 5.0 VVGS = 5.0 VVGS = 10 VVGS = 10 VHuman Body Model (HBM)Machine Model (MM) Test: Pulse Width ≤300 ms, Duty Cycle ≤ 2%. conditions are viewed as beyond the normal operating range of the = 25°CTJ = 150°CTJ = 25°CTJ = 150°C3.12.03.82.815.73.25.74.306.34.37.65.72°CAESD ELECTRICAL CHARACTERISTICS

(TJ = 25°C unless otherwise noted)Electro−Static Discharge Capability4000400V2元器件交易网5002NTYPICAL PERFORMANCE CURVES7ID,

DRAIN

CURRENT

(AMPS)654321001210 V9 V8 V7 V6 V5 V4 V3.8 V3.6 V3.4 V3.2 V3.0 V2.8 V2.6 V34TJ = 25°CID,

DRAIN

CURRENT

(AMPS)4VDS ≥ 10 V32100°C125°CTJ = −55°C1231.53.52.5VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)40VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)Figure 1. On−Region CharacteristicsRDS(on),

DRAIN−TO−SOURCE

RESISTANCE

(W)RDS(on),

DRAIN−TO−SOURCE

RESISTANCE

(W)1.00.90.80.70.60.50.40.30.20.102546789VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)310ID = 1.7 ATJ = 25°C0.30.25Figure 2. Transfer CharacteristicsTJ = 25°CVGS = 5 V0.20.15VGS = 10 V0.10.0502345ID, DRAIN CURRENT (AMPS)Figure 3. On−Resistance vs. Gate−to−SourceVoltage2.5RDS(on),

DRAIN−TO−SOURCERESISTANCE

(NORMALIZED)ID = 1.7 AVGS = 5 V2IDSS,

LEAKAGE

(nA)100010000Figure 4. On−Resistance vs. Drain Current andGate VoltageVGS = 0 VTJ = 150°C1.5100TJ = 100°C1010.50−50−25515TJ, JUNCTION TEMPERATURE (°C)VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)Figure 5. On−Resistance Variation withTemperatureFigure 6. Drain−to−Source Leakage Currentvs. Voltage3元器件交易网5002N

TYPICAL PERFORMANCE CURVES10ID,

DRAIN

CURRENT

(AMPS)VGS = 20 VSINGLE PULSETC = 25°C10IS,

SOURCE

CURRENT

(AMPS)VGS = 0 VTJ = 25°C11 ms10 ms1.00.10.1RDS(on) LIMITTHERMAL LIMITPACKAGE LIMIT1.010dc0.010.40.50.60.70.80.910.010.1100VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)Figure 7. Diode Forward Voltage vs. CurrentFigure 8. Maximum Rated Forward BiasedSafe Operating Area1.0r(t),

NORMALIZED

EFFECTIVETRANSIENT

THERMAL

RESISTANCED = 0.50.20.10.050.020.01SINGLE PULSE1.0E−021.0E−011.0E+00t, TIME (s)1.0E+011.0E+021.0E+030.10.011.0E−03Figure 9. Thermal ResponseORDERING INFORMATIONDeviceNIF5002NT1NIF5002NT1GNIF5002NT3NIF5002NT3GPackageSOT−223SOT−223(Pb−Free)SOT−223SOT−223(Pb−Free)Shipping†1000 / Tape & Reel1000 / Tape & Reel4000 / Tape & Reel4000 / Tape & Reel†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel PackagingSpecifications Brochure, BRD8011/://4元器件交易网5002NPACKAGE DIMENSIONSSOT−223 (TO−261)CASE 318E−04ISSUE LDb1NOTES:IONING AND TOLERANCING PER ANSIY14.5M, LLING DIMENSION: 1bb1cDEee1L1HEMIN1.500.020.602.900.246.303.302.200.851.506.700°MILLIMETERSNOMMAX1.631.750.060.100.750.893.063.200.290.356.506.703.503.702.302.400.941.051.752.007.007.3010°−MIN0.0600.0010.0240.1150.0090.2490.1300.0870.0330.0600.2640°INCHESNOM0.0640.0020.0300.1210.0120.2560.1380.0910.0370.0690.276−MAX0.0680.0040.0350.1260.0140.2630.1450.0940.0410.0780.28710°4HE123Ebe1eqL1CqA0.08 (0003)A1STYLE 3:PIN AINSOURCEDRAINSOLDERING FOOTPRINT*3.80.152.00.0792.30.0912.30.0916.30.2482.00.0791.50.059mmǓǒinchesSCALE 6:1*For additional information on our Pb−Free strategy and solderingdetails, please download the ON Semiconductor Soldering andMounting Techniques Reference Manual, SOLDERRM/ is a trademark of Semiconductor Components Industries, LLC (SCILLC).ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further noticeto any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liabilityarising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. Alloperating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rightsnor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. ShouldBuyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or deathassociated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an EqualOpportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any ATION ORDERING INFORMATIONLITERATURE FULFILLMENT:Literature Distribution Center for ON SemiconductorP.O. Box 61312, Phoenix, Arizona 85082−1312 USAPhone: 480−829−7710 or 800−344−3860 Toll Free USA/CanadaFax: 480−829−7709 or 800−344−3867 Toll Free USA/CanadaEmail: orderlit@. American Technical Support: 800−282−9855 Toll FreeUSA/CanadaJapan: ON Semiconductor, Japan Customer Focus Center2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051Phone: 81−3−5773−3850ON Semiconductor Website: er Literature: /litorderFor additional information, please contact yourlocal Sales ://5NIF5002N/D