2023年7月9日发(作者：)

SP8M3

Transistors

Switching

SP8M3

zFeatures

1) Low on-resistance.

2) Built-in G-S Protection Diode.

3) Small and Surface Mount Package (SOP8).

zApplication

Power switching, DC / DC converter.

zAbsolute maximum ratings (Ta=25°C)

ParameterSymbolVDSSVGSSIDIDPISISPPDTchTstgLimitsNchannelPchannel30−3020−20±5.0±4.5±20±181.6−1.620−182150−55 to +150zExternal dimensions (Unit : mm)

SOP85.0±0.2(5)(8)6.0±0.33.9±0.151.5±0.10.151.270.4±0.10.1Each lead has same dimensionsMax.1.750.5±0.1(1)(4)0.2±0.1

zEquivalent circuit

UnitVVAAAAW°C°C(8)(7)(6)(5)(8)(7)(6)(5)Drain-source voltageGate-source voltageDrain currentSource current

(Body diode)Total power dissipationChannel temperatureStorage temperature∗1 Pw≤10µs, Duty cycle≤1%∗2 MOUNTED ON A CERAMIC uousPulsedContinuousPulsed∗1∗1∗2∗2∗2(1)(2)(3)(4)(1) Tr1 (Nch) Source(2) Tr1 (Nch) Gate(3) Tr2 (Pch) Source(4) Tr2 (Pch) Gate(5) Tr2 (Pch) Drain(6) Tr2 (Pch) Drain(7) Tr1 (Nch) Drain(8) Tr1 (Nch) Drain∗1(1)(2)(3)∗1(4)

zThermal resistance (Ta=25°C)

ParameterChannel to ambient∗MOUNTED ON A CERAMIC BOARD.

∗1 ESD PROTECTION DIODE∗2 BODY DIODE∗A protection diode is included between the gate andthe source terminals to protect the diode against staticelectricity when the product is in use. Use the protectioncircuit when the fixed voltages are exceeded.

SymbolRth (ch-a)Limits62.5Unit°C / W∗

Rev.A 1/5

SP8M3

Transistors

N-ch

zElectrical characteristics (Ta=25°C)

ParameterSymbolMin.−30−1.0−−−3.0−−−−−−−−−−Typ.−−−−365258−23.91.11.4Max.10−12.5517382−−−−−−−−5.5−−IGSSGate-source leakageDrain-source breakdown voltageV(BR) DSSIDSSZero gate voltage drain currentVGS (th)Gate threshold voltageStatic drain-source on-stateresistanceForward transfer admittanceInput capacitanceOutput capacitanceReverse transfer capacitanceTurn-on delay timeRise timeTurn-off delay timeFall timeTotal gate chargeGate-source chargeGate-drain charge∗PulsedUnitµAVµAVmΩSpFpFpFnsnsnsnsnCnCnCConditionsVGS=20V, VDS=0VID=1mA, VGS=0VVDS=30V, VGS=0VVDS=10V, ID=1mAID=5.0A, VGS=10VID=5.0A, VGS=4.5VID=5.0A, VGS=4VID=5.0A, VDS=10VVDS=10VVGS=0Vf=1MHzID=2.5A, VDD 15VVGS=10VRL=6.0ΩRG=10ΩVDD 15VVGS=5VID=5.0A∗∗∗∗RDS (on)YfsCissCossCrsstd (on)trtd (off)tfQgQgsQgd∗∗∗∗∗∗∗

zBody diode characteristics (Source-Drain Characteristics) (Ta=25°C)

ParameterForward voltage∗Pulsed

SymbolVSDMin.−Typ.−Max.1.2UnitVConditionsIS=6.4A, VGS=0V∗

Rev.A 2/5 SP8M3

Transistors

P-ch

zElectrical characteristics (Ta=25°C)

.−−−−405765−850258.52.53.0Max.−10−−1−2.5568090−−−−−−−−−−−IGSS−Gate-source leakageDrain-source breakdown voltageV(BR) DSS−30IDSS−Zero gate voltage drain currentVGS (th)−1.0Gate threshold voltage−Static drain-source on-stateRDS (on)−resistance−3.5YfsForward transfer admittanceCiss−Input capacitanceCoss−Output capacitanceReverse transfer capacitanceCrss−Turn-on delay timetd (on)−Rise timetr−Turn-off delay timetd (off)−Fall timetf−Total gate chargeQg−Gate-source chargeQgs−Gate-drain chargeQgd−∗PulsedUnitµAVµAVmΩSpFpFpFnsnsnsnsnCnCnCConditionsVGS= −20V, VDS=0VID= −1mA, VGS=0VVDS=−30V, VGS=0VVDS= −10V, ID= −1mAID= −4.5A, VGS= −10VID= −2.5A, VGS= −4.5VID= −2.5A, VGS= −4.0VID= −2.5A, VDS= −10VVDS= −10VVGS=0Vf=1MHzID= −2.5A, VDD −15VVGS= −10VRL=6.0ΩRG=10ΩVDD −15VVGS= −5VID= −4.5A∗∗∗∗∗∗∗∗∗∗∗

zBody diode characteristics (Source-Drain Characteristics) (Ta=25°C)

ParameterForward voltage∗Pulsed

SymbolVSDMin.−Typ.−Max.−1.2UnitVConditionsIS= −1.6A, VGS=0V∗

Rev.A 3/5 SP8M3

Transistors

N-ch

zElectrical characteristic curves

GATE-SOURCE

VOLTAGE

:

VGS

(V)

1000Ta=25°Cf=1MHzVGS=0V10000SWITCHING

TIME

:

t

(ns)CAPACITANCE

:

C

(pF)1000tfTa=25°CVDD=15VVGS=10VRG=10ΩPulsed10Ta=25°C9VDD=15VID=5A8RG=10Ω7Pulsed654321

Ciss100CossCrss100td (off)10trtd (on)100.010.111010010.010.1110DRAIN-SOURCE VOLTAGE : VDS

(V)DRAIN CURRENT : ID

(A)TOTAL GATE CHARGE : Qg

(nC)Fig.1 Typical Capacitancevs. Drain-Source VoltageFig.2 Switching CharacteristicsFig.3 Dynamic Input Characteristics

VDS=10VPulsedTa=125°CTa=75°CTa=25°CTa= −25°CSTATIC

DRAIN-SOURCEON-STATE

RESISTANCE

:

RDS

(on)

(mΩ)

DRAIN

CURRENT

:

ID

(A)10

300500Ta=25°CPulsed

SOURCE

CURRENT

:

Is

(A)10Ta=125°CTa=75°CTa=25°CTa= −25°CVGS=0VPulsed

1ID=5AID=2.5A10.10.10.010.0010.00.51.01.52.02.53.03.54.160.010.00.51.01.5GATE-SOURCE VOLTAGE : VGS

(V)GATE-SOURCE VOLTAGE : VGS

(V)SOURCE-DRAIN VOLTAGE : VSD

(V)Fig.4 Typical Transfer CharacteristicsFig.5 Static Drain-SourceOn-State Resistance vs.

Gate-Source VoltageFig.6 Source Current -Drain Voltage

STATIC

DRAIN-SOURCEON-STATE

RESISTANCE

:

RDS

(on)

(mΩ)STATIC

DRAIN-SOURCEON-STATE

RESISTANCE

:

RDS

(on)

(mΩ)Ta=125°CTa=75°CTa=25°CTa= −25°CVGS=10VPulsedTa=125°CTa=75°CTa=25°CTa= −25°CVGS=4.5VPulsedSTATIC

DRAIN-SOURCEON-STATE

RESISTANCE

:

RDS

(on)

(mΩ)

1000

1000

1000Ta=125°CTa=75°CTa=25°CTa= −25°CVGS=4VPulsed

11010.111010.111010.1110DRAIN CURRENT : ID

(A)DRAIN CURRENT : ID

(A)DRAIN CURRENT : ID

(A)Fig.7 Static Drain-SourceOn-State Resistancevs. Drain Current (Ι)Fig.8 Static Drain-SourceOn-State Resistancevs. Drain Current (ΙΙ)Fig.9 Static Drain-SourceOn-State Resistancevs. Drain Current (ΙΙΙ)

Rev.A 4/5 SP8M3

Transistors

P-ch

zElectrical characteristic curves

GATE-SOURCE

VOLTAGE

:

−VGS

(V)

10000Ta=25°Cf=1MHzVGS=0V10000SWITCHING

TIME

:

t

(ns)CAPACITANCE

:

C

(pF)10001000CissTa=25°CVDD= −15VVGS= −10VRG=10ΩPulsed87654321001234567Ta=25°CVDD= −15VID= −4.5ARG=10ΩPulsed

tf100td (off)100CossCrss10td (on)tr100.010.111010010.010.11108910DRAIN-SOURCE VOLTAGE : −VDS

(V)DRAIN CURRENT : −ID

(A)TOTAL GATE CHARGE : Qg

(nC)Fig.1 Typical Capacitancevs. Drain-Source VoltageFig.2 Switching CharacteristicsFig.3 Dynamic Input Characteristics

STATIC

DRAIN-SOURCEON-STATE

RESISTANCE

:

RDS

(on)

(mΩ)

DRAIN

CURRENT

:

−ID

(A)10VDS= −10VPulsedTa=125°CTa=75°CTa=25°CTa= −25°C

200Ta=25°CPulsedID=−4.5AID=−2.0A

SOURCE

CURRENT

:

−IS

(A)10Ta=125°CTa=75°CTa=25°CTa= −25°CVGS=0VPulsed

115010.11000.10.01500.0010.00.51.01.52.02.53.03.54.4160.010.00.51.01.5GATE-SOURCE VOLTAGE : −VGS

(V)GATE-SOURCE VOLTAGE : −VGS

(V)SOURCE-DRAIN VOLTAGE : −VSD

(V)Fig.4 Typical Transfer CharacteristicsFig.5 Static Drain-SourceOn-State Resistance vs.

Gate-Source VoltageFig.6 Source Current -Drain Voltage

STATIC

DRAIN-SOURCEON-STATE

RESISTANCE

:

RDS

(on)

(mΩ)STATIC

DRAIN-SOURCEON-STATE

RESISTANCE

:

RDS

(on)

(mΩ)STATIC

DRAIN-SOURCEON-STATE

RESISTANCE

:

RDS

(on)

(mΩ)

1000VGS= −10VPulsed

1000VGS= −4.5VPulsedTa=125°CTa=75°CTa=25°CTa= −25°C

1000VGS= −4VPulsedTa=125°CTa=75°CTa=25°CTa= −25°C

100Ta=125°CTa=75°CTa=25°CTa= −25°C100100100.1110100.1110100.1110DRAIN CURRENT : −ID

(A)DRAIN CURRENT : −ID

(A)DRAIN CURRENT : −ID

(A)Fig.7 Static Drain-SourceOn-State Resistancevs. Drain Current (Ι)Fig.8 Static Drain-SourceOn-State Resistancevs. Drain Current (ΙΙ)Fig.9 Static Drain-SourceOn-State Resistancevs. Drain Current (ΙΙΙ) Rev.A 5/5 Appendix

NotesNo technical content pages of this document may be reproduced in any form or transmitted by any

means without prior permission of ROHM CO., contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference only. Upon actual use, therefore, please requestthat specifications to be separately ation circuit diagrams and circuit constants contained herein are shown as examples of standard

use and operation. Please pay careful attention to the peripheral conditions when designing circuitsand deciding upon circuit constants in the data, including, but not limited to application circuit diagrams information, described herein

are intended only as illustrations of such devices and not as the specifications for such devices. ROHM

CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of anythird party's intellectual property rights or other proprietary rights, and further, assumes no liability of

whatsoever nature in the event of any such infringement, or arising from or connected with or related

to the use of such the sale of any such devices, other than for buyer's right to use such devices itself, resell or

otherwise dispose of the same, no express or implied right or license to practice or commercially

exploit any intellectual property rights or other proprietary rights owned or controlled by

ROHM CO., LTD. is granted to any such ts listed in this document are no antiradiation products listed in this document are designed to be used with ordinary electronic equipment or devices

(such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys).Should you intend to use these products with equipment or devices which require an extremely high level of

reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other

safety devices), please be sure to consult with our sales representative in Export Control Order in JapanProducts described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade ControlOrder in case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1