2024年4月23日发(作者：)

专利内容由知识产权出版社提供

专利名称：MANUFACTURE OF SEMICONDUCTOR

PHOTODETECTOR

发明人：NISHIZAWA JIYUNICHI,SUZUKI

SOUBEE,TAMAMUSHI NAOSHIGE

申请号：JP21859082

申请日：19821213

公开号：JPS59107583A

公开日：19840621

摘要：PURPOSE:To obtain accurate positional relationship, and to improve the light

response property of the photodetector consisting of an SIT by determining the

positions of control and shielding gate regions and the position of a drain or source

region through the same mask alignment. CONSTITUTION:An n<-> type layer 2 is grown

on an n<+> Si substrate 1 in an epitaxial manner, the whole surface is coated with a pad

oxide film 6 consisting of SiO2, and Si3N4 films are formed on the film 6 at regular

intervals. Field SiO2 films 6', which are connected to the film 6 and volume thereof are

expanded, are formed among the Si3N4 films through heat treatment, and the p<+>

type gate region 4, the p<+> type shielding region 5 surrounding the region 4 and the

n<+> type source or drain region 3 positioned between these regions 4 and 5 are

formed among these films 6' while being positioned under the film 6 through an ion

implantation. An electrode 8 is formed in the region 3, the whole surface containing the

electrode 8 is coated with a thick insulating film 11, all films on the region 4 are removed,

a thin insulating film 12 is formed on the whole surface, a control gate electrode 9 is

formed on the region 4 through the film 12. The whole surface is coated with an Al film,

one part thereof is in contact with the region 5.

申请人：FUJI SHASHIN FILM KK

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