2024年4月23日发(作者：)
专利内容由知识产权出版社提供
专利名称：High Efficient Silicon-on-Lithium Niobate
Modulator
发明人：Jianxiao Chen,Charles Cox
申请号：US12207488
申请日：20080909
公开号：US2A1
公开日：20090312
专利附图：
摘要：A modulator includes an electro-optical substrate and a first and second
waveguide formed of a doped semiconductor material positioned on a surface of an
electro-optical substrate forming a slot therebetween. A doping level of the
semiconductor material being chosen to make the first and second waveguide
conductive. A dielectric material is positioned in the slot which increases confinement of
both an optical field and an electrical field inside the slot. A refractive index of the
semiconductor material and a refractive index of the dielectric material positioned in the
slot being chosen to reduce the Vπ·L product of the modulator.
申请人：Jianxiao Chen,Charles Cox
地址：North Billerica MA US,Carlisle MA US
国籍：US,US
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