2024年4月11日发(作者：)

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专利名称：Circuit substrate

发明人：波多野 剛,高橋 孝

申请号：JP特願昭62-17524

申请日：19870128

公开号：JP特公平7-38503B2

公开日：19950426

摘要：PURPOSE:To make it possible to stop the intrusion of moisture from the

outside, by providing a metallized layer comprising high-melting-point metal, which is

formed on the surface of a substrate comprising a sintered aluminum nitride body,

providing a nickel layer formed on the surface of the metallized layer, and specifying the

value of the thickness of the nickel plated layer. CONSTITUTION:This device is provided

with a substrate comprising a sintered aluminum nitride body, a metallized layer

comprising high-melting-point metal formed on the surface of the substrate and a nickel

plated layer formed on the surface of the metallized layer. The thickness of the nickel

plated layer 3 is 5 mum or more and desirably 6-8mum. Pinholes are not present in the

nickel plated layer 3. Moisture from the outside is stopped at this layer. The moisture

from the outside does not pass through the inside of the nickel plated layer 3 and the

metallized layer, and the intrusion of the moisture between the metallized layer 2 and

the surface of the aluminum nitride substrate can be prevented. The metallized layer 2

comprises high-melting-point metal such as tungsten and molibdenum, and a high-

melting-point metal paste is applied on the surface. Then, the layer is formed by baking.

The thickness of the layer 2 is 10-15mum.

申请人：株式会社東芝

地址：神奈川県川崎市幸区堀川町72番地

国籍：JP

代理人：鈴江 武彦 (外2名)

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