2024年5月10日发(作者：微软官方网)

【

南京南山半导体有限公司 — 长电三极管选型资料

】

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

FEATURES

z

z

z

z

SOT-223 Plastic-Encapsulate Transistors

SOT-223

BCP51,52,53

TRANSISTOR (PNP)

For AF driver and output stages

High collector current

Low collector-emitter saturation voltage

Complementary types: BCP56 (NPN)

1. BASE

2. COLLECTOR

3. EMITTER

MAXIMUM RATINGS (T

a

=25℃ unless otherwise noted)

Symbol Parameter

V

CBO

V

CEO

V

EBO

I

C

P

C

R

θJA

T

stg

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Thermal Resistance Junction to Ambient

Storage Temperature Range

BCP51 BCP52 BCP53

Unit

-45 -60 -100 V

-45 -60 -80 V

-5

-1

1.5

94

-65~+150

V

A

W

℃/W

℃

ELECTRICAL CHARACTERISTICS (T

a

=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage BCP51

V

(BR)CBO

BCP52

BCP53

Collector-emitter breakdown voltage BCP51

BCP52

V

(BR)CEO

BCP53

Base-emitter breakdown voltage

Collector cut-off current

I

C

= -10mA,I

B

=0

I

C

=- 0.1mA,I

E

=0

Symbol Test conditions Min Max Unit

-45

-60

-100

-45

-60

-80

V

V

= I

C

= -10μA,I

E

0 -5 V

V

(BR)EBO

= V

CB

= -30 V, I

E

0 -100nA

I

CBO

h

FE(1)

= V

CE

=-2V, I

C

-5mA 25

DC current gain

h

FE(2)

h

FE(3)

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency

V

CE

= -2V, I

C

=-150m A

V

CE

= -2V, I

C

=-500m A

63

25

250

I

C

=-500mA,I

B

-50mA -0.5 V

V

CE(sat)

=

V

BE

f

T

V

CE

=-2V, I

C

=-500m A -1 V

V

CE

=-10V,I==100MHz 100 MHz

C

-50mA,f

CLASSIFICATION OF h

FE(2)

Rank

Range

BCP51-10, BCP52-10, BCP53-10 BCP51-16, BCP52-16, BCP53-16

63-160 100-250

B,Apr,2013

Typical Characteristics

BCP52

Static Characteristic

-250

COMMON

EMITTER

T

)

a

=25

℃

A

-200

m

(

-1mA

C

-0.9mA

I

T

N

-150

-0.8mA

E

R

-0.7mA

R

U

-0.6mA

C

R

-100

O

-0.5mA

T

C

-0.4mA

E

L

L

O

-50

-0.3mA

C

-0.2mA

I

B

=-0.1mA

-0

-0-1-2-3-4-5

COLLECTOR-EMITTER VOLTAGE V

CE

(V)

V

-1000

BEsat

——

I

C

β=10

-800

N

T

O

a

=25

℃

I

)

T

V

A

R

m

(

U

T

-600

t

A

a

s

E

S

B

R

V

T

E

a

=100

℃

T

E

T

I

G

-400

M

A

E

T

-

L

E

O

S

V

A

B

-200

-0

-0.1-1-10-100-1000

COLLECTOR CURREMT I

C

(mA)

I

C

——

V

BE

-1000

COMMON EMITTER

V

CE

=-2V

)

A

m

(

-100

C

I

℃

0

T

0

N

1

E

=

℃

a

R

-10

T

5

2

R

=

U

a

T

C

R

O

T

C

E

L

-1

L

O

C

-0.1

-0-200-400-600-800-1000-1200

BASE-EMMITER VOLTAGE V

BE

(mV)

C

1000

ob

/C

ib

——

V

CB

/V

EB

f=1MHz

I

E

=0/I

C

=0

C

ib

T

a

=25

℃

)

F

p

(

100

C

E

C

N

A

T

I

C

C

ob

A

P

10

A

C

1

-0.1-1-10

-30

REVERSE VOLTAGE V (V)

h

FE

——

I

1000

C

COMMON EMITTER

V

CE

= -2V

T

a

=100

℃

E

F

h

N

I

A

G

T

N

a

=25

℃

E

100

T

R

R

U

C

C

D

10

-1-10-100-1000

COLLECTOR CURRENT I

C

(mA)

V

-1000

CEsat

——

I

C

β=10

N

O

I

T

A

R

)

U

V

T

m

A

(

T

S

a

=100

℃

t

R

a

s

E

E

C

T

V

T

I

-100

M

E

E

-

G

R

A

O

T

T

L

C

O

E

V

L

L

O

C

T

a

=25

℃

-10

-0.1-1-10-100-1000

COLLECTOR CURREMT I

C

(mA)

fI

300

T

——

C

COMMON EMITTER

)

z

V

CE

=-10V

H

M

T

a

=25

℃

(

T

f

100

Y

C

N

E

U

Q

E

R

F

N

O

I

T

I

S

N

A

R

T

10

-3

-10-20-30-40-50-60

COLLECTOR CURRENT I

C

(mA)

P

1800

C

—— T

a

N

O

1500

I

T

A

P

I

S

S

1200

I

D

)

R

W

E

W

m

(

O

900

P

C

R

P

O

T

C

600

E

L

L

O

C

300

0

5150

AMBIENT TEMPERATURE T

a

(

℃

)

B,Apr,2013