2023年11月22日发(作者：life)

三星闪存芯片命名规律

1. Memory (K)

2. NAND Flash : 9

3. Small Classification

(SLC : Single Level Cell, MLC : Multi Level Cell,

S : SLC Single SM

T : SLC SINGLE (S/ B)

U : 2 STACK MSP

V : 4 STACK MSP

W : SLC 4 Die Stack

08 : x8

16 : x16

8. Vcc

A : 1.65V~3.6V

A : 2nd Generation

B : 3rd Generation

C : 4th Generation

U : COB (MMC)

V : WSOP

W : WAFER

Y : TSOP1

16. Packing Type

- Common to all products, except of Mask ROM

- Divided into TAPE & REEL(In Mask ROM, divided into TRAY, AMMO Packing Separately)

17~18. Customer "Customer List Reference"

注:这里说的容量单位都是bit,要除以8才是我们常说的容量值.

【举例说明】

K 9 G A G 0 8 U 0 M - P C B 0

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18

K9GAG08U0M 详细信息如下:

1. Memory (K)

2. NAND Flash : 9

3. Small Classification

(SLC : Single Level Cell, MLC : Multi Level Cell,

SM : SmartMedia, S/B : Small Block)

G : MLC Normal

4~5. Density

AG : 16G (Note: 这里单位是bit而不是byte，因此实际大小是16Gb=2GB)

6. Technology

0 : Normal (x8)

7. Organization

0 : NONE 8 : x8

8. Vcc

U : 2.7V~3.6V

9. Mode

0 : Normal

10. Generation

M : 1st Generation

11. "─"

12. Package

P : TSOP1 (Lead-Free)

13. Temp

C : Commercial

14. Customer Bad Block

B : Include Bad Block

15. Pre-Program Version

0 : None

K9GAG08U0M是，三星的MLC Nand Flash，工作电压为2.7V~3.6V，x8（即I/O

是8位），大小是2GB（16Gb），TSOP1封装。