2023年7月25日发(作者：)

专利内容由知识产权出版社提供专利名称：THERMORESISTIVE GAS SENSOR, FLOWSENSOR AND THERMAL CONDUCTIVITYSENSOR发明人：Strauch, Piotr,Zettner, Jürgen, Dr.,von Dosky,Stefan, Dr.,Kisban, Sebastian, Dr.,Klehr,Stefan,Neuhauser, Thomas,Zapf, Jörg申请号：EP18164748.8申请日：20180328公开号：EP3546931B1公开日：20210721摘要：A thermoresistive gas sensor (1), z. B. for a flow sensor or a thermal conductivitydetector, comprises a gas-flowable by the flat grid (2) with grid bars (8), which consist of asemiconductor material (5) with a predetermined conductivity and are arranged inparallel next to each other in the lattice plane The semiconductor material (5) can beformed as a semiconductor layer (6) on a plate-shaped semiconductor substrate (3),wherein it is connected via a high-sensitivity and mechanical stability, the grid bars (8) S-shaped running and electrically window-like recess (7) in the semiconductor substrate (3)and there forms the grid (2). The semiconductor layer (6) is doped outside the recess (7)in the regions of the two ends of the grating (2) at least over the width of the grating (2)until degeneracy and / or carries there metallizations (10, 11). The semiconductor layer(6) furthermore contains a separating structure (9) which is mutually insulating the twoends of the grid (2) and in which the semiconductor material (5) is removed or intrinsic.更多信息请下载全文后查看