2024年4月24日发(作者：联想a820多少钱)

专利内容由知识产权出版社提供

专利名称：FORMATION OF DIE ALIGNMENT MARK

发明人：SAMOTO NORIHIKO

申请号：JP17905187

申请日：19870720

公开号：JPS6423531A

公开日：19890126

摘要：PURPOSE:To prevent the detection accuracy during a detection operation of a

mask position from deteriorating by a method wherein an intermediate layer which does

not react with a semiconductor substrate and a die alignment mark is installed and a

metal to be used as the alignment mark is formed on a recessed part formed on this

intermediate layer so that the surface and an edge of the alignment mark are not

roughened due to a heat treatment operation. CONSTITUTION:An intermediate layer 22

composed of SiO2 is grown on a GaAs semiconductor substrate 21; a first resist 23 is

coated; a region to form die alignment mark is exposed and developed, after that, the

intermediate layer 22 in an unnecessary part is removed by an etching operation. Then,

the first resist 23 is removed by an organic cleaning operation; after that, a second resist

24 is coated; a die alignment mark pattern is formed on the intermediate layer 22 by an

optical exposure operation; a development operation is executed. Furthermore, a

position to form the alignment mark on the intermediate layer 22 is removed slightly by

the etching operation; a recessed part 27 is formed. Then, metals 25 and 26 are

evaporated. The second resist 24 and the metal 25 in an unnecessary part are removed

by a lift-off method by the organic cleaning operation. By this setup, this can be utilized

as the alignment mark whose surface is smooth and which has a uniform edge; after a

heat treatment operation it is possible to prevent the position detection accuracy from

deteriorating.

申请人：NEC CORP

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