2024年4月20日发(作者:华为mate20现在多少钱一台)
【
南京南山半导体有限公司 — 长电贴片三极管选型资料
】
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
SOT–23
2SD602A
TRANSISTOR (NPN)
FEATURES
Low Collector to Emitter Saturation Voltage
Mini Type Package
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
ΘJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
60
50
5
500
200
625
150
-55~+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol Test conditions
V
(BR)CBO
I
C
=10µA, I
E
=0
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
*
h
FE(2)
*
f
T
C
ob
I
C
=10mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=20V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=10V, I
C
=0.15A
V
CE
=10V, I
C
=0.5A
V
CE
=10V,I
C
=0.05A, f=200MHz
V
CB
=10V, I
E
=0, f=1MHz
Min
60
50
5
85
40
Typ
200
Max
0.1
0.1
340
0.6
15
Unit
V
V
V
µA
µA
V
MHz
pF
V
CE(sat)
*
I
C
=0.3A, I
B
=0.03A
*Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%.
CLASSIFICATION OF
h
FE(1)
RANK
RANGE
MARKING
Q
85–170
XQ
R
120–240
XR
S
170–340
XS
A,Oct,2010
【
南京南山半导体有限公司 — 长电三极管选型资料
】
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions In Millimeters
.
0.9001.150
0.0000.100
0.9001.050
0.3000.500
0.0800.150
2.8003.000
1.2001.400
2.2502.550
0.950 TYP.
1.8002.000
0.550 REF.
0.3000.500
0°8°
Dimensions In Inches
.
0.0350.045
0.0000.004
0.0350.041
0.0120.020
0.0030.006
0.1100.118
0.0470.055
0.0890.100
0.037 TYP.
0.0710.079
0.022 REF.
0.0120.020
0°8°
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