2024年4月18日发(作者：佳能eos300d)

【

南京南山半导体有限公司 — 长电三极管选型资料

】

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD

TO-92 Plastic-Encapsulate Transistors

2SA1300

TRANSISTOR (PNP)

FEATURES

z

High DC Current Gain and Excellent h

FE

Linearity

z

Low Saturation Voltage

MAXIMUM RATINGS (T

a

=25℃ unless otherwise noted)

Symbol Parameter

V

CBO

V

CEO

V

EBO

I

C

P

C

T

j

T

stg

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

-20

-10

-6

V

V

V

TO-92

1. EMITTER

2. COLLECTOR

3. BASE

Value Unit

-2 A

0.75

150

-55~ +15

W

℃

℃

ELECTRICAL CHARACTERISTICS (T

a

=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency

Collector Output Capacitance

Symbol

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

h

FE

V

CE(sat)

V

BE

f

T

Cob

Test conditions Min Typ Max Unit

V

V

V

-0.1 µA

-0.1 µA

600

I

C

=-1mA , I

E

=0 -20

I

C

=-10mA , I

B

=0 -10

I

E

=-1mA, I

C

=0 -6

V

CB

=-20 V , I

E

=0

V

EB

=-6 V , I

C

=0

V

CE

=-1V, I

C

=-0.5A 140

I

C

=-2A, I

B

= -100mA

-0.82 V

-1.5 V

MHz

I

C

= -2A, V

CE

=-1V

V

CE

=-1V, I

C

= -0.5A

f = 30MHz

V

CB

=-10V,IE=0

f=1MHZ

140

50 pF

CLASSIFICATION OF h

FE

Rank

Range

Y GR

140-280 200-400

BL

300-600

【

南京南山半导体有限公司 — 长电三极管选型资料

】

Symbol

A

A1

b

c

D

D1

E

e

e1

L

Φ

h

Dimensions In Millimeters

.

3.3003.700

1.1001.400

0.3800.550

0.3600.510

4.3004.700

3.430

4.3004.700

1.270 TYP.

2.4402.640

14.10014.500

1.600

0.0000.380

Dimensions In Inches

.

0.1300.146

0.0430.055

0.0150.022

0.0140.020

0.1690.185

0.135

0.1690.185

0.050 TYP.

0.0960.104

0.5550.571

0.063

0.0000.015