2024年4月17日发(作者：ipad mini4官网报价)

元器件交易网

FCH20N60 / FCA20N60 600V N-Channel MOSFET

SuperFET

FCH20N60 / FCA20N60

600V N-Channel MOSFET

Features

•650V @T

J

= 150°C

•Typ.R

DS(on)

= 0.15Ω

•Ultra low gate charge (typ. Q

g

= 75nC)

•Low effective output capacitance (typ. C

oss

.eff = 165pF)

•100% avalanche tested

TM

Description

SuperFET

TM

is, Farichild’s proprietary, new generation of high

voltage MOSFET family that is utilizing an advanced charge

balance mechanism for outstanding low on-resistance and

lower gate charge performance.

This advanced technology has been tailored to minimize con-

duction loss, provide superior switching performance, and with-

stand extreme dv/dt rate and higher avalanche energy.

Consequently, SuperFET is very suitable for various AC/DC

power conversion in switching mode operation for system min-

iaturization and higher efficiency.

D

!

"

G

!

G

D

S

!

"

"

"

TO-247

GDS

TO-3P

!

S

Absolute Maximum Ratings

Symbol

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt

P

D

T

J,

T

STG

T

L

Drain-Source Voltage

Drain Current

Drain Current

Gate-Source voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation(T

C

= 25°C)

- Derate above 25°C

(Note 2)

(Note 1)

(Note 1)

(Note 3)

Parameter

- Continuous (T

C

= 25°C)

- Continuous (T

C

= 100°C)

- Pulsed

(Note 1)

FCH20N60

600

FCA20N60Unit

V

A

A

A

V

mJ

A

mJ

V/ns

W

W/°C

°C

°C

20

12.5

60

± 30

690

20

20.8

4.5

208

1.67

-55 to +150

300

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

Thermal Characteristics

Symbol

R

θJC

R

θCS

R

θJA

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink

Thermal Resistance, Junction-to-Ambient

Typ.

--

0.24

--

Max.

0.6

--

41.7

Unit

°C/W

°C/W

©2005 Fairchild Semiconductor Corporation

1

FCH20N60 / FCA20N60 Rev. A

元器件交易网

FCH20N60 / FCA20N60 600V N-Channel MOSFET

Package Marking and Ordering Information

Device Marking

FCH20N60

FCA20N60

Device

FCH20N60

FCA20N60

Package

TO-247

TO-3P

Reel Size

-

-

Tape Width

-

-

Quantity

30

30

Electrical Characteristics

T = 25°C unless otherwise noted

C

Symbol

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T

J

BV

DS

I

DSS

I

GSSF

I

GSSR

V

GS(th)

R

DS(on)

g

FS

C

iss

C

oss

C

rss

C

oss

C

oss

eff.

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

Parameter

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature

Coefficient

Drain-Source Avalanche Breakdown

Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

Gate Threshold Voltage

Static Drain-Source

On-Resistance

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Output Capacitance

Effective Output Capacitance

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Conditions

V

GS

= 0V, I

D

= 250µA, T

J

= 25°C

V

GS

= 0V, I

D

= 250µA, T

J

= 150°C

I

D

= 250µA, Referenced to 25°C

V

GS

= 0V, I

D

= 20A

V

DS

= 600V, V

GS

= 0V

V

DS

= 480V, T

C

= 125°C

V

GS

= 30V, V

DS

= 0V

V

GS

= -30V, V

DS

= 0V

V

DS

= V

GS

, I

D

= 250µA

V

GS

= 10V, I

D

= 10A

V

DS

= 40V, I

D

= 10A

V

DS

= 25V, V

GS

= 0V,

f = 1.0MHz

(Note 4)

Min

600

--

--

--

--

--

--

--

3.0

--

--

--

--

--

--

--

--

--

--

(Note 4, 5)

Typ

--

650

0.6

700

--

--

--

--

--

0.15

17

2370

1280

95

65

165

62

140

230

65

75

13.5

36

--

--

--

530

10.5

MaxUnits

--

--

--

--

1

10

100

-100

5.0

0.19

--

3080

1665

--

85

--

135

290

470

140

98

18

--

20

60

1.4

--

--

V

V

V/°C

V

µA

µA

nA

nA

V

Ω

S

pF

pF

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

A

A

V

ns

µC

On Characteristics

Dynamic Characteristics

V

DS

= 480V, V

GS

= 0V, f = 1.0MHz

V

DS

= 0V to 400V, V

GS

= 0V

V

DD

= 300V, I

D

= 20A

R

G

= 25Ω

Switching Characteristics

--

--

--

--

--

--

--

--

--

V

DS

= 480V, I

D

= 20A

V

GS

= 10V

(Note 4, 5)

Drain-Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain-Source Diode Forward Current

Maximum Pulsed Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

V

GS

= 0V, I

S

= 20A

V

GS

= 0V, I

S

= 20A

dI

F

/dt =100A/µs

(Note 4)

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. I

AS

= 20A, V

DD

= 50V, R

G

= 25Ω, Starting T

J

= 25°C

3. I

SD

≤ 20A, di/dt ≤ 200A/µs, V

DD

≤ BV

DSS

, Starting T

J

= 25°C

4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

FCH20N60 / FCA20N60 Rev. A

2