2024年4月15日发(作者：电信无线wifi套餐价格)

k7a90e场效应管参数

英文回答：

K7A90E is a high voltage, low on-resistance, N-channel

power MOSFET with gate charge technology. It combines high

performance and ruggedness for use in a wide range of

switching applications.

The K7A90E is designed for use in applications where

high efficiency and fast switching are required. It has a

maximum drain-source voltage of 900V and a maximum drain

current of 7.5A. The typical on-resistance is only 100mΩ,

which makes it a very efficient switch.

The K7A90E is also designed for ruggedness. It is

capable of withstanding a maximum peak gate-source voltage

of 20V and a maximum peak drain-source voltage of 1200V. It

also has a high surge capability, which makes it able to

handle high inrush currents.

The K7A90E is a high performance, rugged MOSFET that is

ideal for use in a wide range of switching applications.

Its high efficiency and fast switching make it a good

choice for applications where power consumption and

switching speed are critical.

中文回答：

K7A90E场效应管参数。

K7A90E是一款高压、低导通电阻、N沟道功率MOSFET，采用栅

极电荷技术。它兼具高性能和坚固性，可用于各种开关应用。

K7A90E专为需要高效率和快速开关的应用而设计。它具有900V

的最大漏极-源极电压和7.5A的最大漏极电流。典型的导通电阻仅

为100mΩ，使其成为一款高效率开关。

K7A90E还坚固耐用。它能够承受20V的最大峰值栅极-源极电

压和1200V的最大峰值漏极-源极电压。它还具有高浪涌能力，使其

能够处理高浪涌电流。

K7A90E是一款高性能、坚固耐用的MOSFET，非常适合用于各种

开关应用。它的高效率和快速开关使其成为对功耗和开关速度要求

苛刻的应用的理想选择。