2024年3月19日发(作者：美图t9手机多少钱一台)
I
ANGEL
E
CTRONICSTECHNOLOGYCO.,LTDJIANGSUCHANGJCHANGJIELE
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T
-23Plastic-Enca
p
sulateTransistorsSOSOTPlastic-Encap
S9015
T
-23SOSOT
TRANSISTOR(PNP)
A
TURESFEFEA
t
arytoS90
1
4
z
ComplemenComplementS901
MARKING:M6
5
℃unlessothe
r
wisenoted)MAXIMUMRATINGS(T
A
=2=25other
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Collector-BaseVoltage
Collector-EmitterVoltage
Emitter-BaseVoltage
CollectorCurrent-Continuous
CollectorPowerDissipation
JunctionTemperature
StorageTemperature
a
met
e
rParParamete
R
TOR
Value
-50
-45
-5
-0.1
0.2
150
-55-150
t
sUniUnit
V
V
V
A
W
℃
℃
RACTERISTICS
(Tamb=25℃unlessothe
r
wisespecified)ELECTRICALCHACHARARACTERISTICSher
Parameter
o
wnvoltageCollector-basebreakdbreakdo
a
kd
o
wnvol
t
ageCollector-emitterbrebreakdoolt
s
ebreakd
o
wnvoltageEmitter-baEmitter-basbreakdo
Collectorcut-offcurrent
Emittercut-offcurrent
r
entgainDCcurcurr
r
-emittersatu
r
ationvoltageCollectoCollectorsatur
s
e-emitt
e
rsat
u
rati
o
nvoltageBaBas-emittesaturatio
e
qu
e
ncyTransitionfrfreque
l
Symbobol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
t
Tesest
d
iti
o
nsconconditioMIN
-50
-45
-5
-0.1
-0.1
2001000
-0.3
-1
150
V
V
MHz
TYPMAXUNIT
V
V
V
I
C
=-100
μ
A,I
E
=0
I
C
=-0.1mA,I
B
=0
I
E
=-100
μ
A,I
C
=0
V
CB
=-50V,I
E
=0
V
EB
=-5V,I
C
=0
V
CE
=-5V,I
C
=-1mA
I
C
=-100mA,I
B
=-10mA
I
C
=-100mA,I
B
=-10mA
V
CE
=-5V,I
C
=-10mA
μ
A
μ
A
f=
30MHz
C
ATIONOFh
FE
CLASSIFICLASSIFIC
Rank
Range
L
200-450
H
450-1000
TypicalCharacteristicsS9015
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