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A Product Line of

Diodes Incorporated

DMN6068SE

60V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V

(BR)DSS

R

DS(on)

68mΩ @ V

GS

= 10V

100mΩ @ V

GS

= 4.5V

I

D

T

A

= 25°C

5.6A

4.7A

Features and Benefits

•

•

•

•

100% Unclamped Inductive Switch (UIS) test in production

Fast switching speed

“Green” component and RoHS compliant (Note 1)

Qualified to AEC-Q101 Standards for High Reliability

• Low on-resistance

60V

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

and yet maintain superior switching performance, making it ideal for

high efficiency power management applications.

• Motor control

•

•

•

Transformer driving switch

Power management functions

Uninterrupted power supply

• DC-DC Converters

Mechanical Data

• Case: SOT223

•

•

•

•

•

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0 (Note 1)

Moisture Sensitivity: Level 1 per J-STD-020

Terminals Connections: See diagram below

Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

Weight: 0.112 grams (approximate)

SOT223

D

G

S

Top View

Pin Out - Top View

Equivalent Circuit

Ordering Information

(Note 1)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

DMN6068SE-13 N6068 13 12 4,000

Notes:

1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information

about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.

Marking Information

YWW

N6068

= Manufacturer’s Marking

N6068 = Product Type Marking Code

YWW = Date Code Marking

Y = Year (ex: 9 = 2009)

WW = Week (01 - 53)

DMN6068SE

/

Document Number DS32033 Rev. 2 - 2

1 of 9

January 2011

© Diodes Incorporated

A Product Line of

Diodes Incorporated

DMN6068SE

Maximum Ratings

@T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

60 V

Drain-Source voltage

V

DSS

V

Gate-Source voltage (Note 2)

±20

V

GS

Single Pulsed Avalanche Energy (Note 7) E

AS

37.5 mJ

Single Pulsed Avalanche Current (Note 7) I

AS

5.0 A

(Note 4) 5.6

A

Continuous Drain current

4.5

I

D

V

GS

= 10VT

A

= 70°C (Note 4)

(Note 3) 4.1

Pulsed Drain current

(Note 5) 20.8 A

V

GS

= 10V I

DM

Continuous Source current (Body diode) (Note 4)

4.9 A

I

S

Pulsed Source current (Body diode) (Note 5)

20.8 A

I

SM

Thermal Characteristics

@T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

2.0

(Note 3)

16.0

W

Power dissipation

P

D

Linear derating factor

mW/°C

3.7

(Note 4)

29.5

62.5

(Note 3)

Thermal Resistance, Junction to Ambient

R

θ

JA

(Note 4) 34

°C/W

Thermal Resistance, Junction to Lead (Note 6)

11.5

R

θ

JL

Operating and storage temperature range

-55 to 150

°C

T

J

, T

STG

Notes:

2. AEC-Q101 V

GS

maximum is ±16V.

3. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is

measured when operating in a steady-state condition.

4. Same as note (3), except the device is measured at t ≤ 10 sec.

5. Same as note (3), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.

6. Thermal resistance from junction to solder-point (at the end of the drain lead).

7. UIS in production with L = 3.0mH, I

AS

= 5.0A, R

G

= 25Ω, V

DD

=50V, starting T

J

= 25°C.

DMN6068SE

/

Document Number DS32033 Rev. 2 - 2

2 of 9

January 2011

© Diodes Incorporated