2024年3月9日发(作者：飞利浦x598手机参数)

【

南京南山半导体有限公司 — 长电贴片三极管选型资料

】

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

==

=

TRANSISTOR (NPN)

=

=

=

FEATURE

=

z

High voltage: V

CEO

=160V

=

z

Large continuous collector current capability

=

2SC2383

MARKING：2383

MAXIMUM RATINGS (T

A

=25℃ unless otherwise noted)

SOT-89

-3L

1.

BASE

2.

COLLECTOR

3.

EMITTER

Symbol Parameter

V

CBO

V

CEO

V

EBO

I

C

P

C

T

J

T

stg

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

Value Unit

160 V

160 V

6

1

0.5

150

-55~+150

V

A

W

℃

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency

Collector output capacitance

*

Symbol

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

h

FE

V

CE(sat)

V

BE

f

T

C

ob

*

Test conditions Min Max Unit

I

C

= 100μA , I

E

0 160 V

I

C

= 10mA, I

B

0 160 V

I

E

= 10μA, I

C

0 6 V

V

CB

=150V, I

E

0 1 μA

V

EB

=6V, I

C

0 1 μA

V

CE

=5V, I

C

200mA 100 320

I

C

=500m A, I

B

50mA 1 V

I

C

=5mA, V

CE

= 5V

V

CE

=5V, I

C

=200mA

0.45 0.75 V

20 MHz

V

CB

=10V,I

E

0,f1MHz 20 pF

pulse test

CLASSIFICATION OF h

FE

Rank

Range

O

100-200

Y

160-320

B,May,2013

Typical Characteristics

2SC2383

Static Characteristic

300

COMMON

EMITTER

T

)

250

a

=25

℃

1mA

A

m

(

0.9mA

C

I

200

0.8mA

T

N

0.7mA

E

R

R

150

0.6mA

U

C

R

0.5mA

O

T

100

C

0.4mA

E

L

L

0.3mA

O

C

50

0.2mA

I

B

=0.1mA

0

01234567

COLLECTOR-EMITTER VOLTAGE V

CE

(V)

V

1000

BEsat

——

I

C

β=10

800

N

T

O

a

=25

℃

I

)

T

V

A

R

m

(

U

T

600

t

A

a

s

E

S

B

R

V

E

T

E

T

I

G

400

T

a

=100

℃

M

A

E

T

-

L

E

O

S

V

A

B

200

0

0.

COLLECTOR CURREMT I

C

(mA)

I

1000

C

——

V

BE

COMMON EMITTER

V

CE

=5V

)

A

m

(

100

C

℃

I

0

0

T

1

N

=

a

E

T

℃

5

R

R

10

2

=

a

U

T

C

R

O

T

C

E

L

1

L

O

C

0.1

010001200

BASE-EMMITER VOLTAGE V

BE

(mV)

C

1000

ob

/C

ib

——

V

CB

/V

EB

f=1MHz

I

E

=0/I

C

=0

C

ib

T

a

=25

℃

)

F

p

(

100

C

E

C

C

N

ob

A

T

I

C

A

P

10

A

C

1

0.1110

30

REVERSE VOLTAGE V (V)

h

3000

FE

——

I

C

COMMON EMITTER

1000

V

CE

= 5V

T

E

a

=100

℃

F

h

N

I

A

T

G

100

a

=25

℃

T

N

E

R

R

U

C

C

D

10

1

0.

COLLECTOR CURRENT I

C

(mA)

V

1000

CEsat

——

I

C

β=10

N

O

I

T

A

R

)

U

V

T

m

A

(

S

t

R

a

s

E

E

C

T

V

T

I

100

T

M

a

=100

℃

E

E

-

G

R

A

O

T

T

L

C

O

E

V

L

L

T

a

=25

℃

O

C

10

0.

COLLECTOR CURREMT I

C

(mA)

f

100

T

——

I

C

)

z

H

M

(

80

T

f

Y

C

N

E

U

Q

60

E

R

F

N

O

I

T

I

S

N

40

A

COMMON EMITTER

R

T

V

CE

=5V

T

a

=25

℃

20

20

4

COLLECTOR CURRENT I

C

(mA)

P

600

C

—— T

a

N

O

500

I

T

A

P

I

S

S

400

I

D

)

R

W

E

W

m

(

O

300

P

C

R

P

O

T

C

200

E

L

L

O

C

100

0

5150

AMBIENT TEMPERATURE T

a

(

℃

)

B,May,2013

【

南京南山半导体有限公司 — 长电三极管选型资料

】

Symbol

A

b

b1

c

D

D1

E

E1

e

e1

L

Dimensions In Millimeters

.

1.4001.600

0.3200.520

0.4000.580

0.3500.440

4.4004.600

1.550 REF.

2.3002.600

3.9404.250

1.500 TYP.

3.000 TYP.

0.9001.200

Dimensions In Inches

.

0.0550.063

0.0130.020

0.0160.023

0.0140.017

0.1730.181

0.061 REF.

0.0910.102

0.1550.167

0.060 TYP.

0.118 TYP.

0.0350.047

The bottom gasket

The file folder

Label on the Reel

Plastic bag

1000×1 PCS

The top gasket

Seal the box

with the tape

Stamp “EMPTY”

on the empty box

Seal the box

with the tape

QA Label

Label on the Inner Box

Inner Box:

210 mm× 208 mm×２０３　mm

Label on the Outer Box

Outer Box:

440 mm× 440 mm× 230 mm