2024年3月12日发(作者：)

专利内容由知识产权出版社提供

专利名称：Paralleling to the aforementioned electric

charge transfer section

发明人：新添 真人

申请号：JP2004342702

申请日：20041126

公开号：JP4494173B2

公开日：20100630

摘要：

PROBLEM TO BE SOLVED: To provide the manufacturing method of a solid state

imaging apparatus with less variation in smear characteristics and sensitivity.

SOLUTION: The method comprises a step of forming on a semiconductor substrate an

electric charge transfer 106, a photoelectric converter 107, and electric charge transfer

electrode 109 on the electric charge transfer 106; depositing a metal light shielding film

111 and a second insulating film 112 over the entire surface via a first insulating film 110,

and then etching back the entire surface of the insulating film 112; forming a side wall 113

by the insulating film 112 on the side surface of the electric charge transfer electrode

109; opening it above the photoelectric conversion part 107; forming a resist pattern 114

where an opening end is located on the side wall 113; and etching the resist pattern 114

and the side wall 113 of the insulating film using a mask to form the opening 115 of a

metal light shielding film 111 on the photoelectric converter 107. Consequently, the

opening 115 of the metal light shielding film 111 is kept unchanged with respect to the

charge transfer electrode 109 without being influenced by positioning displacement and

processing variation in photolithography, so that it is possible to reduce variations of

sensitivity and smear characteristics.

COPYRIGHT: (C)2006,JPO&NCIPI

申请人：パナソニック株式会社

地址：大阪府門真市大字門真１００６番地

国籍：JP

代理人：特許業務法人池内・佐藤アンドパートナーズ

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